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Serial-section electron microscopy is the method of choice for studying cellular structure and network connectivity in the brain. We have built a pipeline of parallel imaging using transmission electron automated microscopes (piTEAM) that scales this technology and enables the acquisition of petascale datasets containing local cortical microcircuits. The distributed platform is composed of multiple transmission electron microscopes that image, in parallel, different sections from the same block of tissue, all under control of a custom acquisition software (pyTEM) that implements 24/7 continuous autonomous imaging. The suitability of this architecture for large scale electron microscopy imaging was demonstrated by acquiring a volume of more than 1 mm3 of mouse neocortex spanning four different visual areas. Over 26,500 ultrathin tissue sections were imaged, yielding a dataset of more than 2 petabytes. Our current burst imaging rate is 500 Mpixel/s (image capture only) per microscope and net imaging rate is 100 Mpixel/s (including stage movement, image capture, quality control, and post processing). This brings the combined burst acquisition rate of the pipeline to 3 Gpixel/s and the net rate to 600 Mpixel/s with six microscopes running acquisition in parallel, which allowed imaging a cubic millimeter of mouse visual cortex at synaptic resolution in less than 6 months.

We demonstrate a method to achieve high efficiency phase contrast imaging in aberration corrected scanning transmission electron microscopy (STEM) with a pixelated detector. The pixelated detector is used to record the Ronchigram as a function of probe position which is then analyzed with ptychography. Ptychography has previously been used to provide super-resolution beyond the diffraction limit of the optics, alongside numerically correcting for spherical aberration. Here we rely on a hardware aberration corrector to eliminate aberrations, but use the pixelated detector data set to utilize the largest possible volume of Fourier space to create high efficiency phase contrast images. The use of ptychography to diagnose the effects of chromatic aberration is also demonstrated. Finally, the four dimensional dataset is used to compare different bright field detector configurations from the same scan for a sample of bilayer graphene. Our method of high efficiency ptychography produces the clearest images, while annular bright field produces almost no contrast for an in-focus aberration-corrected probe. (C) 2014 Elsevier B.V. All rights reserved

Electron-optical aberration correction has recently progressed from a promising concept to a powerful research tool. 100–120 kV scanning transmission electron microscopes (STEMs) equipped with spherical aberration (Cs) correctors now achieve sub-Å resolution in high-angle annular dark field (HAADF) imaging, and a 300 kV Cs-corrected STEM has reached 0.6 Å HAADF resolution. Moreover, the current available in an atom-sized probe has grown by about 10x, allowing electron energy loss spectroscopy (EELS) to detect single atoms. We summarize the factors that have made this possible, and outline likely future progress.

In the 4 years since the previous meeting in the SALSA series, aberration correction has progressed from a promising concept to a powerful research tool. We summarize the factors that have enabled 100–120 kV scanning transmission electron microscopes to achieve sub-A resolution, and to increase the current available in an atom-sized probe by a factor of 10 and more. Once C s is corrected, fifth-order spherical aberration ( C 5 ) and chromatic aberration ( C c ) pose new limits on resolution. We describe a quadrupole/octupole corrector of a new design, which will correct all fifth-order aberrations while introducing less than 0.2 mm of additional C c . Coupled to an optimized STEM column, the new corrector promises to lead to routine sub-A electron probes at 100 kV, and to sub-0.5 A probes at higher operating voltages.

Aberration correction of the scanning transmission electron microscope (STEM) has made it possible to reach probe sizes close to 1 A at 60 keV, an operating energy that avoids direct knock-on damage in materials consisting of light atoms such as B, C, N and O. Although greatly reduced, some radiation damage is still present at this energy, and this limits the maximum usable electron dose. Elemental analysis by electron energy loss spectroscopy (EELS) is then usefully supplemented by annular dark field (ADF) imaging, for which the signal is larger. Because of its strong Z dependence, ADF allows the chemical identification of individual atoms, both heavy and light, and it can also record the atomic motion of individual heavy atoms in considerable detail. We illustrate these points by ADF images and EELS of nanotubes containing nanopods filled with single atoms of Er, and by ADF images of graphene with impurity atoms. (C) 2010 Elsevier B.V. All rights reserved.

An imaging technique able to resolve and identify all individual atoms in non-periodic solids would be a very useful tool for materials analysis. Annular dark-field (ADF) imaging in an aberration-corrected scanning transmission electron microscope optimized for low voltage operation allows such an analysis, as shown by Ondrej Krivanek and co-workers. The technique was used to examine a monolayer of boron nitride, in which it revealed individual atomic substitutions involving carbon and oxygen impurity atoms. Careful analysis of the data enables the construction of a detailed map of the atomic structure, with all the atoms of the four species resolved and identified. An imaging technique that could identify all the individual atoms, including defects, in a material would be a useful tool. Here an electron-microscopy approach to the problem, based on annular dark-field imaging, is described. A monolayer of boron nitride was studied, and three types of atomic substitution were identified. Careful analysis of the data enabled the construction of a detailed map of the atomic structure. Direct imaging and chemical identification of all the atoms in a material with unknown three-dimensional structure would constitute a very powerful general analysis tool. Transmission electron microscopy should in principle be able to fulfil this role, as many scientists including Feynman realized early on1. It images matter with electrons that scatter strongly from individual atoms and whose wavelengths are about 50 times smaller than an atom. Recently the technique has advanced greatly owing to the introduction of aberration-corrected optics2,3,4,5,6,7,8. However, neither electron microscopy nor any other experimental technique has yet been able to resolve and identify all the atoms in a non-periodic material consisting of several atomic species. Here we show that annular dark-field imaging in an aberration-corrected scanning transmission electron microscope optimized for low voltage operation can resolve and identify the chemical type of every atom in monolayer hexagonal boron nitride that contains substitutional defects. Three types of atomic substitutions were found and identified: carbon substituting for boron, carbon substituting for nitrogen, and oxygen substituting for nitrogen. The substitutions caused in-plane distortions in the boron nitride monolayer of about 0.1 A magnitude, which were directly resolved, and verified by density functional theory calculations. The results demonstrate that atom-by-atom structural and chemical analysis of all radiation-damage-resistant atoms present in, and on top of, ultra-thin sheets has now become possible.

Aberration correction in the scanning transmission electron microscope allows spatial resolutions of the order of one Ångström to be routinely achieved. When combined with electron energy loss spectroscopy, it is possible to simultaneously map the structure, the chemistry and even the electronic properties of materials in one single experiment. Here we will apply these techniques to the characterization of thin films and interfaces based on complex oxides with the perovskite structure. The relatively large lattice parameter of these materials combined with the fact that most of them have absorption edges within the reach of the spectrometer optics makes these materials ideal for these experiments. We will show how it is possible to map the chemistry of interfaces atomic plane by atomic plane, including light elements such as O. Applications to cobaltite and titanate thin films will be described.

An all-magnetic monochromator/spectrometer system for sub-30 meV energy-resolution electron energy-loss spectroscopy in the scanning transmission electron microscope is described. It will link the energy being selected by the monochromator to the energy being analysed by the spectrometer, without resorting to decelerating the electron beam. This will allow it to attain spectral energy stability comparable to systems using monochromators and spectrometers that are raised to near the high voltage of the instrument. It will also be able to correct the chromatic aberration of the probe-forming column. It should be able to provide variable energy resolution down to approximately 10 meV and spatial resolution less than 1 Å.

Using a fifth-order aberration-corrected scanning transmission electron microscope, which provides a factor of 100 increase in signal over an uncorrected instrument, we demonstrated two-dimensional elemental and valence-sensitive imaging at atomic resolution by means of electron energy-loss spectroscopy, with acquisition times of well under a minute (for a 4096-pixel image). Applying this method to the study of a La 0.7 Sr 0.3 MnO 3 /SrTiO 3 multilayer, we found an asymmetry between the chemical intermixing on the manganese-titanium and lanthanum-strontium sublattices. The measured changes in the titanium bonding as the local environment changed allowed us to distinguish chemical interdiffusion from imaging artifacts.

A Nion spherical-aberration (Cs) corrector was recently installed on Lehigh University's 300-keV cold field-emission gun (FEG) Vacuum Generators HB 603 dedicated scanning transmission electron microscope (STEM), optimized for X-ray analysis of thin specimens. In this article, the impact of the Cs-corrector on X-ray analysis is theoretically evaluated, in terms of expected improvements in spatial resolution and analytical sensitivity, and the calculations are compared with initial experimental results. Finally, the possibilities of atomic-column X-ray analysis in a Cs-corrected STEM are discussed.

Some four decades were needed to catch up with the vision that Albert Crewe and his group had for the scanning transmission electron microscope (STEM) in the nineteen sixties and seventies: attaining 0.5A resolution, and identifying single atoms spectroscopically. With these goals now attained, STEM developments are turning toward new directions, such as rapid atomic resolution imaging and exploring atomic bonding and electronic properties of samples at atomic resolution. The accomplishments and the future challenges are reviewed and illustrated with practical examples.

Aberration-corrected scanning transmission electron microscopes (STEMs) can now produce electron probes as small as 1 A at 60 keV. This level of performance allows individual light atoms to be imaged in various novel materials including graphene, monolayer boron nitride, and carbon nanotubes. Operation at 60 keV avoids direct knock-on damage in such materials, but some radiation damage often remains, and limits the maximum usable electron dose. Elemental identification by electron energy loss spectroscopy (EELS) is then usefully supplemented by annular dark-field (ADF) imaging, for which the signal is much larger and the spatial resolution significantly better. Because of its strong dependence on the atomic number Z, ADF can be used to identify the chemical type of individual atoms, both heavy and light. We review the instrumental requirements for atomic resolution imaging at 60 keV and lower energies, and we illustrate the kinds of studies that have now become possible by ADF images of graphene, monolayer BN, and single-wall carbon nanotubes, and by ADF images and EEL spectra of carbon nanotubes containing nanopods filled with single atoms of Er. We then discuss likely future developments.

Progress in aberration correction of electron microscopes has been rapid in the last decade. CEOS and Nion, the two companies chiefly responsible for the advent of practical aberration correctors, were started 12 and 11 years ago, respectively, at a time when aberration correction still seemed an impractical dream to many electron microscopists. The first sub-A resolution, directly interpretable aberration-corrected images were published in 2002 [1]. Today, there are more than 100 aberration-corrected electron microscopes in the world, and several more are installed each month. The resolution attained has reached 50 pm (0.5 A) in both STEM and TEM, and the electron current in an atom-sized electron probe can now be such that atomic-resolution STEM/EELS elemental maps can be acquired in less than one minute [2].

This chapter discusses various principles used by aberration-corrected instruments and the performance they should be able to attain. This chapter also provides various application examples from areas chapter consider especially promising, and discuss what may be next for aberration-corrected scanning transmission electron microscopy (STEM). Aberration correction has greatly improved the performance and the range of useful applications of STEMs. It is now possible to form atomic resolution images and spectra at primary energies as low as 60 keV. Electron probes can be produced that are smaller than the typical atom and yet contain enough current for rapid EELS analysis with sensitivity down to the single atom level. This is leading to a new range of applications for the STEM- electron energy-loss spectroscopy (EELS) technique, which may well begin to rival the sensitivity of the atom probe.

Improved resolution made possible by aberration correction has greatly increased the demands on the performance of all parts of high-end electron microscopes. In order to meet these demands, we have designed and built an entirely new scanning transmission electron microscope (STEM). The microscope includes a flexible illumination system that allows the properties of its probe to be changed on-the-fly, a third-generation aberration corrector which corrects all geometric aberrations up to fifth order, an ultra-responsive yet stable five-axis sample stage, and a flexible configuration of optimized detectors. The microscope features many innovations, such as a modular column assembled from building blocks that can be stacked in almost any order, in situ storage and cleaning facilities for up to five samples, computer-controlled loading of samples into the column, and self-diagnosing electronics. The microscope construction is described, and examples of its capabilities are shown.

Through the correction of spherical aberration in the scanning transmission electron microscope (STEM), the resolving of a 78 pm atomic column spacing has been demonstrated along with information transfer to 61 pm. The achievement of this resolution required careful control of microscope instabilities, parasitic aberrations and the compensation of uncorrected, higher order aberrations. Many of these issues are improved in a next generation STEM fitted with a new design of aberration corrector, and an initial result demonstrating aberration correction to a convergence semi-angle of 40 mrad is shown. The improved spatial resolution and beam convergence allowed for by such correction has implications for the way in which experiments are performed and how STEM data should be interpreted.

Extended abstract of a paper presented at Microscopy and Microanalysis 2005 in Honolulu, Hawaii, USA, July 31--August 4, 2005.

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2005

The scanning transmission electron microscope (STEM) has been able to image individual heavy atoms in a light matrix for some time. It is now able to do much more: it can resolve individual atoms as light as boron in monolayer materials; image atomic columns as light as hydrogen, identify the chemical type of individual isolated atoms from the intensity of their annular dark field (ADF) image and by electron energy loss spectroscopy (EELS); and map elemental composition at atomic resolution by EELS and energy-dispersive X-ray spectroscopy (EDXS). It can even map electronic states, also by EELS, at atomic resolution. The instrumentation developments that have made this level of performance possible are reviewed, and examples of applications to semiconductors and oxides are shown.

A dedicated STEM developed for operation at primary energies from 200 keV to 40 keV and lower is described. It has a new cold field emission gun (CFEG) that gives a normalized brightness of 3 × 10 8 A/(m 2 sr V), and excellent short-term and long-term stability. It includes two gun lenses (one electrostatic and one electromagnetic), a fast electrostatic beam blanker, three condenser lenses, a corrector of third- and fifth-order geometric aberrations, an objective lens with low aberration coefficients, a flexible set of projector lenses, an ultra-stable sample stage, and provision for storing up to five samples under high vacuum and loading them into the microscope’s objective lens under remote control. The microscope is enclosed in a magnetically and acoustically shielding enclosure, which allows it to operate at a high performance level even in non-optimal environments. It has reached 53 pm resolution at 200 keV and 123 pm at 40 keV, and an EELS energy resolution of 0.26 eV.