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Shock wave propagation processes of dual-source underwater explosion are researched. Basing on dimensional theory, the variation of peak pressure and specific impulse gain coefficient with dimensionless explosion distance and dimensionless spacing are analyzed. The results show that there are high-pressure coupling and low-pressure coupling regions in the shock wave field. The shock wave peak pressure and specific impulse are functions of dimensionless explosion distance, dimensionless spacing and azimuth. When the azimuth is 90, conclusions are as follows: when the dimensionless explosion distance is greater than 30 and the dimensionless spacing is greater than 2.48, the gain coefficient of shock wave peak pressure is stable at 30%~50%, when the dimensionless explosion distance is constant and less than 30, the gain coefficient of shock wave peak pressure is maximum in the dimensionless distance range of 9~13, and the specific impulse gain coefficient increases with the dimensionless distance in the range of 4.96~24.81.

This paper proposes for the first time a blind deconvolution technique for extracting the unknown two variation factors of the Random Telegraph Noise (RTN) and the truncated Random Dopant Fluctuation (RDF) solely from the given target for SRAM margin variations. Unlike the non-blind deconvolution, the blind deconvolution has to extract the both of the two unknown factors of RTN and truncated RDF simultaneously, that can be sort of ill-posed problem. The proposed algorithm features a sequentially-dual iteration loop and an adaptively segmented forward-problem based blind deconvolution (DIAS-BDCV) process. This allows a free of convergence error in the optimization process. This effectiveness has been demonstrated for the first time with applying to a real SRAM design analysis. It has been shown that the proposed DIAS-BDCV technique allows: (1) a free of convergence-error and local-minimum-error in blind deconvolution even if the total number of parameters to be sought in the optimization problem exceeds 20, and (2) a low enough blind deconvolution errors of the RTN and RDF comparable to the level (＜ 10 -13 ) of the non-blind one.

This paper proposes a ringing-error-free non-blind deconvolution technique featuring an iterative and adaptively segmented forward-problem based deconvolution (IASDCN) process. Unlike the algebraic based inverse operations, this eliminates any operations of differential and division by zero to successfully circumvent the issue on an abnormal V-shaped error. This effectiveness has been demonstrated for the first time with applying to a real analysis for the effects of the Random Telegraph Noise (RTN) and/or Random Dopant Fluctuation (RDF) on the overall SRAM margin variations. It has been shown that the proposed IASDCN technique can reduce its relative errors of RTN deconvolution by 1013 to 1015 times, which are good enough for avoiding the abnormal ringing errors in the RTN deconvolution process. This enables to suppress the cdf error of the convolution of RTN with RDF (i.e., fail-bit-count error) to 1/1010 error for the conventional algorithm.

This paper discusses, for the first time, how the statistical SRAM design analyses should be changed when: (1) the shift-amount of the time-dependent (TD) voltage margin variations (MV) after the screening test will become larger than that before and (2) the shapes of the MV distribution will change from the Gaussian to the complex mixtures of Gamma distributions. We discuss on the SRAM TD-MV analyses with not only the forward problem but also the inverse problem, i.e., deconvolution analyses. The proposed algorithm for the deconvolution to circumvent the issues caused by high-pass filtering behavior is discussed. Based on the proposed convolution /deconvolution design analyses, it has been shown for the first time that: (1) detecting the truncating point of the distributions of TD-MV by the screening test and (2) predicting the required the MV-shift-amount by the assisted circuit schemes to avoid the out of specs in the market during the life-time, etc, has become enabled based on the target specification.