1. Isothermal capacitance transient spectroscopy of pseudomorphic high-electron-mobility transistors
- Author
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Nakamoto Takahiro, Tatsuo Ozeki, Yuji Abe, Naohito Yoshida, and Shigemitsu Maruno
- Subjects
Materials science ,Physics and Astronomy (miscellaneous) ,business.industry ,Transistor ,Hardware_PERFORMANCEANDRELIABILITY ,Capacitance ,Spectral line ,Isothermal process ,law.invention ,Gallium arsenide ,chemistry.chemical_compound ,chemistry ,Hardware_GENERAL ,law ,Hardware_INTEGRATEDCIRCUITS ,Optoelectronics ,business ,Hardware_LOGICDESIGN ,Surface states ,Voltage ,Leakage (electronics) - Abstract
The surface electronic properties of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors were investigated by isothermal capacitance transient spectroscopy (ICTS) and gate-leakage current characteristic measurements. Both hole- and electron-like trap spectra were observed by ICTS measurements on gate–source/drain capacitance. We observed enhancement of leakage current and drastic change of static and transient capacitance behavior around a pinch-off voltage. The leakage characteristics and ICTS results were explained in terms of a surface states model.
- Published
- 2003