1. Near EF electronic structure of heavily boron-doped superconducting diamond
- Author
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Y. Tamenori, Nobuyoshi Yamada, Hiroyuki Okazaki, Tomohiro Matsushita, T. Nakamura, Masanori Nagao, Tamio Oguchi, Takashi Tokushima, Takayuki Muro, Jin Nakamura, Shik Shin, Hiroshi Kawarada, Yoshihiko Takano, Takayoshi Yokoya, Y. Takata, and T. Takenouchi
- Subjects
Superconductivity ,Materials science ,Condensed matter physics ,Photoemission spectroscopy ,Fermi level ,Diamond ,Fermi surface ,Position and momentum space ,General Chemistry ,Electronic structure ,engineering.material ,Condensed Matter Physics ,Brillouin zone ,Condensed Matter::Materials Science ,symbols.namesake ,Condensed Matter::Superconductivity ,symbols ,engineering ,Condensed Matter::Strongly Correlated Electrons ,General Materials Science - Abstract
We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations.
- Published
- 2008
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