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Your search keyword '"Roelens, Y."' showing total 4 results
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4 results on '"Roelens, Y."'

1. Room-temperature terahertz spectroscopy of optically excited plasma waves in HEMTs

Author

Nouvel, P., Marinchio, H., Torres, J., Palermo, C., Gasquet, D., Chusseau, Laurent, Varani, L., Shchepetov, A., Roelens, Y., Bollaert, S., Starikov, E., Shiktorov, P., Gružinskis, V., Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Térahertz, hyperfréquence et optique (TéHO), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Radiations et composants (RADIAC), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Semiconductor Physics Institute (Vilnius), and Vilnius University [Vilnius]

Subjects
010302 applied physics, History, Materials science, Terahertz radiation, business.industry, Biasing, 02 engineering and technology, Plasma, 021001 nanoscience & nanotechnology, 01 natural sciences, Computer Science Applications, Education, Terahertz spectroscopy and technology, Electronic oscillation, Excited state, 0103 physical sciences, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, 0210 nano-technology, business, Spectroscopy, ComputingMilieux_MISCELLANEOUS
Abstract

We report on systematic measurements of resonant plasma waves oscillations in several gate-length InGaAs HEMTs and compare them with numerical results from a specially developed model. A great concern of experiments has been to ensure that HEMTs were not subject to any spurious electronic oscillation that may interfere with the desired plasma-wave spectroscopy excited via a terahertz optical beating. The influence of geometrical HEMTs parameters such as gate-length or cap-layer length as well as biasing conditions is then explored extensively owing to many different devices. Plasma resonances up to the THz are observed.

Published
2009
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2. Transition from ballistic to ohmic transport in T-Branch Junctions at room temperature in GaInAs/AlInAs heterostructures

Author

Galloo, J.S., Pichonat, E., Roelens, Y., Bollaert, S., Wallart, X., Cappy, A., Mateos, J., Gonzales, T., Boutry, H., Bayot, V., Berdnarz, L., Huynen, S., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Universidad de Salamanca, and Université Catholique de Louvain = Catholic University of Louvain (UCL)

Subjects
Electron mobility, Materials science, business.industry, Temperature, Heterojunction, Semiconductor device, Frequency, Bit rate, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, Indium phosphide, Characterization (materials science), Gallium arsenide, Resists, Scattering, Synthetic aperture sonar, chemistry.chemical_compound, [SPI]Engineering Sciences [physics], chemistry, Condensed Matter::Superconductivity, Ballistic conduction, Wet etching, Optoelectronics, business, Ohmic contact, Indium gallium arsenide
Abstract

International audience; We have developed technolow based on GaInAs/AIInAs for building ballistic devices working at room temperature. We present processes for ballistic devices (T-Branch Junctions (TBJs), YBranch Junctions (YBJs)). Then we present DC Characterization of TBJs to show the transition from ballistic to ohmic transport at room temperature and also experimental results for Y-Branch Junctions(YBJS).

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4. Potentiality of commercial metamorphic HEMT at cryogenic temperature and low voltage operation

Author

Noudéviwa, A., Roelens, Y., François DANNEVILLE, Olivier, A., Wichmann, N., Waldhoff, N., Lepilliet, S., Dambrine, G., Desplanque, L., Wallart, X., Bellaiche, J., Smith, D., Maher, H., Bollaert, S., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), and OMMIC

Subjects
[SPI]Engineering Sciences [physics], Cryogenics, Microwave integrated circuits, HEMTs, Microwave amplifiers, Microwave circuits, Noise
Abstract

International audience; We present in this paper, a study of Dc, RF and Noise characteristics of an industrial metamorphic HEMT (High Electron Mobility Transistor) operating under low voltage at cryogenic temperature. The results at 300K are compared with the obtained results at cryogenic temperature. Temperature decrease makes device characteristics improve. This improvements allow to expect to develop a low power cryogenic electronic (LNA), featuring high frequency/noise performances below 100 mV DC biasing.

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