1. Effect of Source and Drain Contacts Schottky Barrier on 3C-SiC Nanowire FETs I-V Characteristics
- Author
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K. Rogdakis, Edwige Bano, Dong Joo Kim, Sang-Kwon Lee, Konstantinos Zekentes, and Seoung Yong Lee
- Subjects
Materials science ,business.industry ,Annealing (metallurgy) ,Mechanical Engineering ,Schottky barrier ,Fermi level ,Doping ,Nanowire ,Condensed Matter Physics ,Metal–semiconductor junction ,symbols.namesake ,Mechanics of Materials ,symbols ,Optoelectronics ,General Materials Science ,Electrical measurements ,business - Abstract
In this work, SiC nanowire (NW) FETs are prepared and their electrical measurements are presented. From the samples fabricated on the same substrate, various I-Vs shapes are obtained (linear, non linear symmetric, and asymmetric). With the assistance of simulation, we show that this is a result of different values of Schottky Barrier Heights (SBH) at Source (S) / Drain (D) contacts of FETs. An origin for this might be a non uniformity in annealing, NW doping level and high interface traps density (that pins the Fermi level) as well as the high sensitivity of the metal-NW contacts to local surface contaminations.
- Published
- 2009
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