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There is a continuous urge for higher efficiency in conventional computing systems, driven by an ever-growing demand for these systems’ complexity to be able to match the one of convoluted and challenging problems. However, this type of problems has formulated the benchmarks for unconventional computing systems to validate their emerging applicability and prove their effectiveness. Towards this path, Cellular Automata (CAs) have been established as a promising mathematical tool for simulating physical processes and demonstrated a favourable methodology for effectively implementing computations in hardware by taking advantage of their inherent parallelism. Representing CAs with oscillating memristive networks could further enhance the performance of these systems, by incorporating the rich dynamics evident in memristors and their strong memory and computing features. In this work, a wave generator circuit has been designed with low-voltage fabricated CBRAM devices, that is able to act as a Wave Cellular Automaton (WCA). These wave generation units are located on a grid with adjusting multi-directional interconnections between neighbors. In addition to that, the ability to reconFigure the amount of such units that influence each other, facilitates the propagation of voltage signals through the grid following wave propagation features. An example of this computational domain is presented with the realization of complex logic gates on the grid of WCAs.

© 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The beneficial role of noise in the performance of Hf-based memristors has been experimentally studied. The addition of an external gaussian noise to the bias circuitry positively impacts the memristors characteristics by increasing the OFF/ON resistances ratio. The known stochastic resonance effect has been observed, when changing the standard deviation of the noise. The influence of the additive noise on the memristor current-voltage characteristic and on the set and reset related parameters are also presented. This research was funded by Spanish MCIN/AEI/10.13039/501100011033, Project PID2019- 103869RB and TEC2017-90969-EXP.

Memristors as emergent nano-electronic devices have been successfully fabricated and used in non-conventional and neuromorphic computing systems in the last years. Several behavioral or physical based models have been developed to explain their operation and to optimize their fabrication parameters. All existing memristor models are trade-offs between accuracy, universality and realism, but, to the best of our knowledge, none of them is purely characterized as quantum mechanical, despite the fact that quantum mechanical processes are a major part of the memristor operation. In this paper, we employ quantum mechanical methods to develop a complete and accurate filamentary model for the resistance variation during memristor's operating cycle. More specifically, we apply quantum walks to model and compute the motion of atoms forming the filament, tight-binding Hamiltonians to capture the filament structure and the Non-Equilibrium Green's Function (NEGF) method to compute the conductance of the device. Furthermore, we proceeded with the parallelization of the overall model through Graphical Processing Units (GPUs) to accelerate our computations and enhance the model's performance adequately. Our simulation results successfully reproduce the resistive switching characteristics of memristors devices, match with existing fabricated devices experimental data, prove the efficacy and robustness of the proposed model in terms of multi-parameterization, and provide a new and useful insight into its operation., Comment: 8 pages, 8 figures, submitted to IEEE Transactions on Nanotechnology (TNANO)

A cellular non-linear network (CNN) is a uniform regular array of locally connected continuous-state machines, or nodes, which update their states simultaneously in discrete time. A microbial fuel cell (MFC) is an electro-chemical reactor using the metabolism of bacteria to drive an electrical current. In a CNN model of the MFC, each node takes a vector of states which represent geometrical characteristics of the cell, like the electrodes or impermeable borders, and quantify measurable properties like bacterial population, charges produced and hydrogen ions concentrations. The model allows the study of integral reaction of the MFC, including temporal outputs, to spatial disturbances of the bacterial population and supply of nutrients. The model can also be used to evaluate inhomogeneous con gurations of bacterial populations attached on the electrode bio lms.