1. Two-Phase Read Strategy for Low Energy Variation-Tolerant STT-RAM
- Author
-
Jaeyoung Park and Young Uk Yim
- Subjects
010302 applied physics ,Computer science ,business.industry ,Sense amplifier ,020208 electrical & electronic engineering ,02 engineering and technology ,01 natural sciences ,Hardware and Architecture ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Overhead (computing) ,Node (circuits) ,Electrical and Electronic Engineering ,business ,Software ,Energy (signal processing) ,Computer hardware - Abstract
An adaptive two-phase read strategy is proposed that allows reliable reads under high variability at a substantially lower energy, utilizing the idea of the conditional use of energy-costly variation-tolerance read. The proposed variation-tolerant design technique is developed for dealing with spatial variability while maintaining low read energy by using the conventional read with two-levels of reference voltages and the variation-tolerance read if a bit is not read out correctly by the conventional read. To achieve a two-phase read strategy, a sense amplifier (SA) is designed that performs both the energy-saving conventional read and the energy-costly variation-tolerant read. The energy overhead is significantly reduced by decreasing the use of variation-tolerant read, and the area overhead is minimized by reusing the conventional SA for the variation-tolerant read. The proposed circuit is evaluated using a compact spin-transfer torque magnetic RAM model, targeting an implementation in a 10-nm technology node. Results indicate that the proposed design strategy reduces read energy by 28.6% compared to the best-known variation-tolerant design with 3.7% area overhead assuming that a 1-bit cell is 20 $F^{2}$ and the number of rows is 1024.
- Published
- 2018