1. Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions
- Author
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Mayank Shrivastava, Maryam Shojaei Baghini, Valipe Ramgopal Rao, and Harald Gossner
- Subjects
Engineering ,Thermal runaway ,Electrostatic Discharge (Esd) ,Kirk Effect ,Filamentation ,Shallow trench isolation ,Charged-device model ,MOSFET ,Electronic engineering ,Charge Device Model (Cdm) ,Input-Output (I/O) ,Electrical and Electronic Engineering ,Electrostatic discharge ,Human Body Model (Hbm) ,business.industry ,Space Charge Build-Up ,Semiconductor device ,Drain-Enhanced Metal-Oxide-Semiconductor (Demos) ,Transient Interferometric Mapping (Tim) ,Electronic, Optical and Magnetic Materials ,Human-body model ,Current Filamentation ,Thermal Runaway ,Base Push-Out ,Laterally Diffused Metal-Oxide-Semiconductor (Ldmos) ,business - Abstract
Time evolution of self-heating and current filamentation are discussed in this paper for shallow-trench-isolation (STI)-type drained-enhanced n-channel metal-oxide-semiconductor (DeNMOS) devices. A deeper insight toward regenerative n-p-n action and its impact over various phases of filamentation and the final thermal runaway is presented. A modified STI-type DeNMOS device is proposed in order to achieve an improvement (similar to 2x) in the failure threshold (I(T2)) and electrostatic discharge (ESD) window (V(T2)). The performance and filament behavior of the standard device under charge-device-model-like ESD conditions is also presented, which is further compared with the proposed modified device. more...
- Published
- 2010
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