Filipe Vaz, C. Lopes, M. Vieira, M. Apreutesei, Luís Miguel Cunha, Joel Nuno Pinto Borges, J P Fernandes, N.P. Barradas, Philippe Steyer, Eduardo Alves, Marcos Rodrigues, Carlos J. Tavares, Universidade do Porto, Instituto Superior de Engenharia de Lisboa (ISEL), Centre of Technology and Systems (CTS), Faculdade de Ciências e Tecnologia = School of Science & Technology (FCT NOVA), Universidade Nova de Lisboa = NOVA University Lisbon (NOVA)-Universidade Nova de Lisboa = NOVA University Lisbon (NOVA), Centre de recherche du CHUM (CR), CHUM-Hôpital Notre-Dame, Instituto de Plasmas e Fusão Nuclear [Lisboa] (IPFN), Instituto Superior Técnico, Universidade Técnica de Lisboa (IST), Instituto Tecnológico e Nuclear (ITN), ITN, CFNUL, Matériaux, ingénierie et science [Villeurbanne] (MATEIS), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Universidade do Minho, Departamento de Física [Minho] (DFUM), ONERA - The French Aerospace Lab [Châtillon], Université Paris Saclay (COmUE)-ONERA, and Instituto Nacional de Pesquisas da Amazônia (INPA)
Ti-Me binary intermetallic thin films based on a titanium matrix doped with increasing amounts of Me (Me = Al, Cu) were prepared by magnetron sputtering (under similar conditions), aiming their application in biomedical sensing devices. The differences observed on the composition and on the micro(structural) features of the films, attributed to changes in the discharge characteristics, were correlated with the electrical properties of the intermetallic systems (Ti-Al and Ti-Cu). For the same Me exposed areas placed on the Ti target (ranging from 0.25 cm2 to 20 cm2) the Cu content increased from 3.5 at.% to 71.7 at.% in the Ti-Cu system and the Al content, in Ti-Al films, ranged from 11 to 45 at.%. The structural characterization evidenced the formation of metastable Ti-Me intermetallic phases for Al/Ti atomic ratios above 0.20 and for Cu/Ti ratios above 0.25. For lower Me concentrations, the effect of the α-Ti(Me) structure domains the overall structure. With the increase amount of the Me into Ti structure a clear trend for amorphization was observed. For both systems it was observed a significant decrease of the electrical resistivity with increasing Me/Ti atomic ratios (higher than 0.5 for Al/Ti atomic ratio and higher than 1.3 for Cu/Ti atomic ratio). Although similar trends were observed in the resistivity evolution for both systems, the Ti-Cu films presented lower resistivity values in comparison to Ti-Al system., Operacional Factores de Competitividade – and by national funds through FCT – Fundação para a Ciência e a Tecnologia –, under the projects PEST-C/FIS/UI607/2013 and PEst-C/EME/UI0285/2013. J. Borges also acknowledges the support by the European social fund within the framework of realizing the project “Support of inter-sectoral mobility and quality enhancement of research teams at Czech Technical University in Prague”, CZ.1.07/2.3.00/30.0034.