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Eutectic gallium indium (E-GaIn) alloy based liquid metal is considered to be a promising material for manufacturing interconnects in stretchable electronics based applications due to its high electrical conductivity and inherent mechanical deformability. The current work demonstrates an easy and single step method of fabricating micron-sized (the width of ~ 200 μm) highly conducting stretchable interconnects by stencil printing of E-GaIn on stretchable polydimethylsiloxane (PDMS) substrate. The obtained stretchable pattern showed excellent electrical and mechanical property by exhibiting a low average resistance value of ~ 6.5 O even at elongation up to 50%. Moreover, it showed superior stability against stretching cycles with just ± 0.12 Ω of variation in resistance. A commercial light emitting diode was mounted on the patterns and illuminated to describe the role of interconnects in a realistic circuit.

Indium hydroxide (In(OH)

A 45-year-old woman presented to the emergency department with acute worsening of prolonged unexplained nausea, nonbilious vomiting, and mild upper abdominal pain of 4 years duration. Her bowel habits were regular, and there was no history of diarrhea or fresh or altered blood in her stool. On further inquiry, there was no history of facial flushing, excessive diaphoresis, or asthmalike symptoms. Her history was unrevealing; in particular, there was no history of known malignancy. On clinical examination, her vital signs were stable. The abdomen was soft, with no focal tenderness or palpable mass. Routine blood investigations, including complete blood counts, and liver, kidney, and thyroid function tests yielded results that were within normal limits. Her 5-hydroxyindoleacetic acid and chromogranin A levels were not elevated. Initial evaluation with contrast-enhanced CT of the abdomen and pelvis was performed. Subsequently, an indium 111 (

Electrochemical carbon dioxide (CO

Lead halide perovskite nanocrystals (PNCs) have emerged as new-generation light-emitting materials with important potentials in optoelectronic applications. However, the toxicity of lead metal and ...

The development of high quality, non-toxic (i.e., heavy-metal-free), and functional quantum dots (QDs) via ‘green’ and scalable synthesis routes is critical for realizing truly sustainable QD-based solutions to diverse technological challenges. Herein, we demonstrate the low-temperature all-aqueous-phase synthesis of silver indium sulfide/zinc (AIS/Zn) QDs with a process initiated by the biomineralization of highly crystalline indium sulfide nanocrystals, and followed by the sequential staging of Ag(+) cation exchange and Zn(2+) addition directly within the biomineralization media without any intermediate product purification. Therein, we exploit solution phase cation concentration, the duration of incubation in the presence of In(2)S(3) precursor nanocrystals, and the subsequent addition of Zn(2+) as facile handles under biomineralization conditions for controlling QD composition, tuning optical properties, and improving the photoluminescence quantum yield of the AIS/Zn product. We demonstrate how engineering biomineralization for the synthesis of intrinsically hydrophilic and thus readily functionalizable AIS/Zn QDs with a quantum yield of 18% offers a ‘green’ and non-toxic materials platform for targeted bioimaging in sensitive cellular systems. Ultimately, the decoupling of synthetic steps helps unravel the complexities of ion exchange-based synthesis within the biomineralization platform, enabling its adaptation for the sustainable synthesis of ‘green’, compositionally diverse QDs.

Background Splenectomy is an effective intervention in primary immune thrombocytopenia (ITP). Attempts to define pre-clinical predictors of platelet response to splenectomy are inconsistent. Based on international studies defining the likelihood of platelet response using platelet sequestration, patients with relapsed/refractory ITP being considered for splenectomy at a regional Australian hospital were assessed with 111 Indium-labelled autologous platelet sequestration (ILAPS) studies. Aims To audit the use of ILAPS in an Australian setting and define its role in predicting response to splenectomy. Methods A retrospective review of all patients referred for an ILAPS study at a regional hospital was performed. Results for each patient were expressed as an "R" value (spleen/ liver uptake ratio) to quantify the platelet sequestration pattern and outcome post splenectomy, based on platelet counts. Results A total of 45 patients were identified, 13 underwent splenectomy and 32 were medically managed. Patients with favourable ILAPS scans (pure or predominant splenic sequestration) demonstrated a superior response post splenectomy (100% overall response rate (ORR), 83.5% complete remission (CR)) compared to those with unfavourable ILAPS scans (mixed or pure hepatic sequestration) (71.4% ORR, 57.1% CR) over 12 months. Conclusions The use of ILAPS in the Australian setting is feasible and this experience confirms larger international studies demonstrating its utility as a predictor of response to splenectomy in ITP. An unfavourable ILAPS scan could be considered a negative predictor of response prompting consideration for other emerging ITP treatments such as thrombopoietin-receptor agonists (TPO-RAs) or B-cell depleting therapy such as Rituximab. This article is protected by copyright. All rights reserved.

BACKGROUND: Indirect detection flat-panel detectors (FPDs) consisting of hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are a prevalent technology for digital x-ray imaging. However, their performance is challenged in applications requiring low exposure levels, high spatial resolution, and high frame rate. Emerging FPD designs using metal oxide TFTs may offer potential performance improvements compared to FPDs based on a-Si:H TFTs. PURPOSE: This work investigates the imaging performance of a new indium gallium zinc oxide (IGZO) TFT-based detector in 2D fluoroscopy and 3D cone-beam CT (CBCT). METHODS: The new FPD consists of a sensor array combining IGZO TFTs with a-Si:H photodiodes and a 0.7-mm thick CsI:Tl scintillator. The FPD was implemented on an x-ray imaging bench with system geometry emulating intraoperative CBCT. A conventional FPD with a-Si:H TFTs and a 0.6-mm thick CsI:Tl scintillator was similarly implemented as a basis of comparison. 2D imaging performance was characterized in terms of electronic noise, sensitivity, linearity, lag, spatial resolution (modulation transfer function, MTF), image noise (noise-power spectrum, NPS), and detective quantum efficiency (DQE) with entrance air kerma (EAK) ranging from 0.3 to [Formula: see text]. 3D imaging performance was evaluated in terms of the 3D MTF and noise-equivalent quanta (NEQ), soft-tissue contrast-to-noise ratio (CNR), and image quality evident in anthropomorphic phantoms for a range of anatomical sites and dose, with weighted air kerma, [Formula: see text] , ranging from 0.8 to 4.9 mGy. RESULTS: The 2D imaging performance of the IGZO-based FPD exhibited up to [Formula: see text] lower electronic noise than the a-Si:H FPD at matched pixel pitch. Furthermore, the IGZO FPD exhibited ~27% increase in mid-frequency DQE [Formula: see text] at matched pixel size and dose [Formula: see text] and ~11% increase after adjusting for differences in scintillator thickness. 2D spatial resolution was limited by the scintillator for each FPD. The IGZO-based FPD demonstrated improved 3D NEQ at all spatial frequencies in both head [Formula: see text] increase for all dose levels) and body ([Formula: see text] increase for [Formula: see text]) imaging scenarios. These characteristics translated to improved low-contrast visualization in anthropomorphic phantoms, demonstrating [Formula: see text] improvement in CNR and extension of the low-dose range for which the detector is input-quantum limited. CONCLUSION: The IGZO-based FPD demonstrated improvements in electronic noise, image lag, and NEQ that translated to measurable improvements in 2D and 3D imaging performance compared to a conventional FPD based on a-Si:H TFTs. The improvements are most beneficial for 2D or 3D imaging scenarios involving low-dose and/or high-frame rate.

As one of the most attractive and eco-friendly technologies, semiconductor photocatalysis is demonstrated as a potential strategy to solve global energy shortage environmental pollution problems. Regarding semiconductor-based photocatalysts, Zinc indium sulfide (ZnIn2S4) with various morphological structures has become research hotspots owing to its superior visible light absorption, high chemical durability and low cost. Nevertheless, the photocatalytic activity of pristine ZnIn2S4 is unsatisfactory due to limited range of visible light absorption and fast recombination rate of light-induced electrons and holes. Different modification strategies, such as metal deposition, element doping, vacancy engineering and semiconductor combination, have been systematically developed for enhancing the photocatalytic performance of ZnIn2S4 materials. In order to promote further developments of ZnIn2S4 in photocatalytic applications, this mini-review summarizes the progress of recent research works for the construction of highly activity ZnIn2S4-based photocatalysts for the first time. In addition, the typical applications of ZnIn2S4-based photocatalytic materials have been critically reviewed and described such as in hydrogen evolution from photocatalytic water splitting, carbon dioxide photoreduction, and treatment of water pollution. The current challenges and further prospects for the development of ZnIn2S4 semiconductor photocatalysts are finally pointed out.

The use of indium phosphide (InP) quantum dots (QDs) as biological fluorophores is limited by the low photoluminescence quantum yield (ϕ

Photodynamic therapy (PDT) applications carried out with the assistance of ultrasound have attracted significant attention in recent years. The use of phthalocyanines, which are an important component as photosensitizers in PDT, is becoming more important day by day. In therapeutic applications, phthalocyanines can promote the production of reactive oxygen species. Motivated by this fact, the syntheses of metal-free (

In this study, influence of magnetron sputtering on indium gallium zinc oxide (IGZO) ceramic target was studied to improve its performance and utilization. Results indicated that state of the target such as target grain uniformity, micro defects, C element pollution, and secondary phase showed significant influence on magnetron sputtering process. Atoms located in small grains were easily bombarded out of IGZO target, and grains with slow sputtering rate protruded from target surface. Porous microstructure of IGZO ceramic created abnormal electric field of the target during sputtering, resulting in the poisoning of target. Moreover, more indium atoms were sputtered from the target, and the proportion of In after sputtering decreased by 0.62–0.97%. The difference in sputtering rates between secondary phase and main phase led to the formation of IGZO cladding layer with poor conductivity under the combined action of sputtering and re-sputtering. In sum, these findings may provide strong guidance for further improvement and performance enhancement of IGZO sputtering target.

openaire: EC/H2020/826588/EU//APPLAUSE The wafer-level Solid Liquid Interdiffusion (SLID) bonds carried out for this work take advantage of the Cu-In-Sn ternary system to achieve low temperature interconnections. The 100mm Si wafers had μ-bumps from 250μm down to 10μm fabricated by consecutive electrochemical deposition of Cu, Sn and In layers. The optimized wafer-level bonding processes were carried out by EV Group and Aalto University across a range of temperatures from 250°C down to 170°C. Even though some process quality related challenges were observed, it could be verified that high strength bonds with low defect content can be achieved even at a low bonding temperature of 170°C with an acceptable 1-hour wafer-level bonding duration. The microstructural analysis revealed that the bonding temperature significantly impacts the obtained phase structure as well as the number of defects. A higher (250°C) bonding temperature led to the formation of Cu3Sn phase in addition to Cu6(Sn,In)5 and resulted in several voids at Cu3Sn|Cu interface. On the other hand, with lower (200°C and 170°C) bonding temperatures the interconnection microstructure was composed purely of void free Cu6(Sn,In)5. The mechanical testing results revealed the clear impact of bonding quality on the interconnection strength.

Novel luminescent dialdiminate complexes of the Group 13 elements were prepared to evaluate the effects of the central element on their properties. We demonstrate that their absorption wavelength and the response to Lewis bases apparently depend on the central atom. The aluminum complex exhibited the absorption band in the higher-energy region than the gallium and indium congeners. Theoretical calculations suggest that the aluminum complex has a lower-lying highest-occupied molecular orbital than the other complexes. Additionally, the emission intensity of the aluminum complex clearly changed in response to a Lewis base. Quantum chemical calculations suggest that these element-dependent optical properties could originate from the difference in the electric charges on the central elements. Interestingly, the ligand exchange reactions were observed in the indium complexes together with the changes in the optical properties and controlled by the addition of InCl3 and InMe3. Furthermore, all the complexes showed aggregation-induced emission enhancement (AIEE) and crystallization-induced emission enhancement (CIEE) properties. These results lead to proposing a practical strategy for manipulating the optoelectronic properties coupled with the reactivities of complexes by choosing the central elements in the same group.

The formation of interfacial chemical bonding in heterostructures plays an important role in the transport of carriers. Herein, we firstly prepared ultrathin InVO4 nanosheet (Ns) with a thickness of 1.5 nm. Diethylenetriamine-modified CdSe (CdSe-DETA) nanobelts are in-situ deposited on the surface of ultrathin InVO4 Ns to build a InVO4/CdSe-DETA step-scheme (S-scheme) heterojunction photocatalysts. The protonated DETA acts as an amine-bridge to promote the formation of a tight chemical bond at the interface of InVO4/CdSe-DETA, thereby promoting the transfer of carriers at the interface. For photocatalytic CO2 reduction, the rationally designed InVO4/CdSe-DETA S-scheme photocatalyst exhibits a remarkable CO generation rate of 27.9 µmol h−1 g−1 at 420 nm, which is 3.35 and 3.39 times higher than that of CdSe-DETA and InVO4 Ns, respectively. The new method by using interfacial chemical bonding to facilitate interfacial charge transportation provide a promising strategy for improve photocatalysis.

Recent advances in flexible electronic devices have stimulated demands for the fabrication of multifunctional materials on highly flexible substrates. However, flexible diluted magnetic semiconductor films have been inadequately reported thus far. In this study, I grew polycrystalline manganese (Mn)-doped indium oxide (In2O3) films on flexible mica substrates at three deposition temperatures (Td) using the pulsed laser deposition method. All the investigated Mn-doped In2O3 films exhibited high optical transparency, high electrical conductivity, room-temperature ferromagnetism, and excellent mechanical durability. The present experimental results demonstrate that Td considerably influences the optical, electrical, and magnetic properties as well as the mechanical durability of the flexible Mn-doped In2O3 films. Based on the robustness of inorganic mica at high deposition temperatures, this detailed investigation provides a strategy for fabricating flexible diluted magnetic semiconductor films, the properties of which could be carefully optimized by widely varying the Td.

Nan Liu,1 Yi Guan,1 Chunling Zhou,2 Yongheng Wang,1 Zhanfei Ma,3 Sanqiao Yao1,4 1School of Public Health, North China University of Science and Technology, Tangshan, 063210, Hebei, People’s Republic of China; 2Baoding Center for Disease Control and Prevention, Baoding, 071030, Hebei, People’s Republic of China; 3Institute of Industrial Hygiene of Ordnance Industry, Xian, 710065, Shanxi, People’s Republic of China; 4XinXiang Medical University, Xinxiang, 453003, Henan, People’s Republic of ChinaCorrespondence: Sanqiao Yao, North China University of Science and Technology, Bohai Avenue 21, Tangshan, 063210, Hebei, People’s Republic of China, Fax +86-315-8805583, Email sanqiaoyao@xxmu.edu.cnPurpose: The main objective of this study was to clarify the biodistribution and in vivo toxicological effects of indium-tin oxide nanoparticles (Nano-ITO) in male rats.Methods: Dose-response (three divided doses) and time-course studies (six exposure durations) were performed to examine Nano‑ITO-induced pulmonary and systemic toxicity. At the end of the experiment, hematology and serum biochemical parameters were determined, and cytokines levels and oxidative stress were analyzed in the bronchoalveolar lavage fluid. In addition, indium biodistribution following Nano‑ITO exposure was determined using inductively coupled plasma mass spectrometer to measure indium concentration in the lung, spleen, brain, liver, kidney, and testis. Rat lung tissues were also harvested for staining with hematoxylin and eosin, periodic acid Schiff stain, Masson’s trichrome, and Sirius red.Results: Relative lung weights were significantly increased in all Nano-ITO-exposed groups. All organs exhibited a statistically significant difference in indium levels. Rat exposure to Nano‑ITO resulted in a dose-response increase in acute systemic inflammation and injury. BALF analysis revealed significantly elevated levels of lung oxidative stress, pulmonary injury, and inflammatory markers across most groups. Serum biochemistry results showed that Nano-ITO could affect the liver and renal functions of rats when exposed for 3 days. Compared with the control group, significant inflammatory responses or pathological changes were observed in the liver, kidney, and testis of rats at different sampling times and three doses examined. Histopathologically, foci of slight-to-severe pulmonary inflammatory response along with acute inflammatory, pulmonary fibrosis and alveolar proteinosis were detected, and the severity of these lesions worsened in a dose- and time-dependent manner.Discussion: These findings provide novel evidence that enhanced progressive massive pulmonary fibrosis, diffuse interstitial fibrosis, and collagen accumulation play a role in the development of pulmonary alveolar proteinosis following Nano-ITO exposure.Keywords: indium-tin oxide nanoparticles, pulmonary fibrosis, pulmonary alveolar proteinosis

Three-dimensional (3D) network structure of metal–organic framework (MOF) can accommodate outstanding electrocatalysis performances, but always collapse during the conversion to active materials or applications process. How to maintain the 3D network when producing active species is of great importance for full application of MOF. Herein, a new MOF material, In[Co(CN)6] (In-Co PBA) nanocubes, are firstly synthesized. Through a controlled low-temperature deligandation process, the In-Co PBA nanocubes are transformed to a novel In2O3@In-Co PBA quasi-MOF nanocubes, which basically retain the 3D porous structure of PBA but with in situ generated In2O3 nanoparticles inside. When used as CO2RR electrocatalyst, such a novel cubic composite structure exhibits excellent performances with faradaic efficiency of 85% for formate at a potential of −0.96 V and with current density of 31.5 mA·cm−2 at −1.32 V, surpassing most of the reported indium-based catalysts. The excellent performance can be attributed to the special composite structure, which provides not only active sites by In2O3 nanoparticles to catalyze CO2RR, but also the 3D porous framework by quasi-MOF to accelerate gaseous exchange and electrolyte permeation and prevent the electrode choking. This work offers a new strategy for the design of post-transition metal catalysts and the structure design of quasi-MOF.

A new indium precursor, namely, indium(II) chloride, was tested as a precursor in the synthesis of ternary Ag−In−S and quaternary Ag−In−Zn−S nanocrystals. This new precursor, being in fact a dimer of Cl2In−InCl2 chemical structure, is significantly more reactive than InCl3, typically used in the preparation of these types of nanocrystals. This was evidenced by carrying out comparative syntheses under the same reaction conditions using these two indium precursors in combination with the same silver (AgNO3) and zinc (zinc stearate) precursors. In particular, the use of indium(II) chloride in combination with low concentrations of the zinc precursor yielded spherical-shaped (D = 3.7−6.2 nm) Ag−In−Zn−S nanocrystals, whereas for higher concentrations of this precursor, rodlike nanoparticles (L = 9−10 nm) were obtained. In all cases, the resulting nanocrystals were enriched in indium (In/Ag = 1.5−10.3). Enhanced indium precursor conversion and formation of anisotropic, longitudinal nanoparticles were closely related to the presence of thiocarboxylic acid type of ligands in the reaction mixture. These ligands were generated in situ and subsequently bound to surfacial In(III) cations in the growing nanocrystals. The use of the new precursor of enhanced reactivity facilitated precise tuning of the photoluminescence color of the resulting nanocrystals in the spectral range from ca. 730 to 530 nm with photoluminescence quantum yield (PLQY) varying from 20 to 40%. The fabricated Ag−In−S and Ag−In−Zn−S nanocrystals exhibited the longest, reported to date, photoluminescence lifetimes of ∼9.4 and ∼1.4 μs, respectively. It was also demonstrated for the first time that ternary (Ag−In− S) and quaternary (Ag−In−Zn−S) nanocrystals could be applied as efficient photocatalysts, active under visible light (green) illumination, in the reaction of aldehydes reduction to alcohols.

Due to the scarcity of indium (In) in the earth and its potential harm to individuals, the development of In-free transparent conductive film is considered crucial. In this work, In-free SnO2:Sb/Au/SnO2:Sb (ATO/Au/ATO, SAS) tri-layer films with high transparency and conductivity were successfully prepared on polycarbonate (PC) substrates by RF and DC magnetron sputtering at room temperature. The influence of the Au layer thickness on microstructure, electrical and optical performances was systematically studied after fixing the ATO thickness to 50 nm. It was indicated by X-ray diffraction patterns that ATO is amorphous and Au is oriented along (111). The trend of increasing and then decreasing light transmission with Au layer thickness was observed in both experimental and simulation results. The improved figure of merit (FoM, 1.89 × 10−2 Ω−1) was achieved in SAS tri-layer film, the resistivity and average transmittance of which was lowered to 7.50 × 10−5 Ω cm and 81.4%, respectively, when Au layer thickness is 11 nm. Moreover, the mechanism of the variation of optical and electrical properties at different Au layer thickness was proposed. Particularly, the SAS tri-layer films also exhibit superior flexibility, durability and adhesion. These results demonstrate SAS tri-layer films are promising alternative to ITO in flexible electronics applications.

Indium can efficiently mediate the Reformatsky reaction of iododifluoroacetylketones with aldehydes to afford the corresponding α,α-difluoro-β-hydroxyketones in high yield in pure water This reaction has excellent substrate suitability and functional group selectivity and provides an efficient approach for the synthesis of bioactive molecules containing the α,α-difluoro-β-hydroxyketone pharmacophore.

With the global dye pollution situation becoming severe, a highly promising material is needed to purify water to safeguard ecological stability and public health. Studies have shown that semiconductor oxides are capable of generating a large number of photogenerated carriers under visible light irradiation as a way to degrade toxic dyes in wastewater. In this paper, CuO films were synthesized on indium tin oxide-coated glass substrates by ionic liquid-assisted electrodeposition. The samples were characterized by field emission scanning electron microscopy, X-ray diffraction, ultraviolet visible spectrophotometer and energy-dispersive spectrometer. The effects of ionic liquid concentration, electrodeposition parameters and annealing temperature on the structure and properties of CuO films were investigated in detail, as well as an in-depth analysis of the mechanism of the interaction between methylene blue and CuO films. The experimental results show that ionic liquids as reaction media, CuO films modified with ionic liquid have smoother surface and uniform thickness, and their smaller crystal size and uniformly distributed particles can provide more active reaction sites. The CuO film prepared under the optimal conditions has stable absorption and response performance to light, and the degradation rate of methylene blue reached 95% in 180 min, showing good ability to degrade organic matter in wastewater. Therefore, the CuO films prepared by ionic liquid-assisted electrodeposition can be used as an effective photocatalyst for the removal of organic dyes from wastewater to ensure water safety and have potential practical applications for human health.

In this work, we demonstrate the record high maximum drain current ( $I_{D}$ ) of 2 A/mm of top-gate (TG) indium oxide (In₂O₃) transistors. The scaled and atomic-layer-deposited (ALD) In₂O₃ transistors have channel length ( $L_{ch}$ ) down to 40 nm and channel thickness ( $T_{ch}$ ) down to 1.3 nm. Besides, the thermal budget of the whole material formation and device fabrication process is as low as 225 °C, making it compatible with back-end-of-line (BEOL) technologies by a huge margin. On the other hand, highly resistive silicon is utilized to serve as a desired high thermal conducting substrate to dissipate the generated heat efficiently as a larger current is conducted under a larger voltage bias. It greatly alleviates the self-heating effect (SHE) and allows an approximately 100% higher drain current. Quantitative studies of the SHE and channel temperature at on-state with SiO₂/Si and highly resistive silicon substrates are also presented.

As a typical IV-VI compound, SnTe has aroused widely attentions in the thermoelectric community due its similar crystal and band structures with PbTe. However, both the large number of inherent Sn vacancies and high thermal conductivity result in inferior thermoelectric performance in intrinsic SnTe over a broad temperature. In this work, we successfully improved those disadvantages of SnTe via stepwisely Pb heavily alloying and then In doping. A significantly wide fraction of Pb into SnTe (0–50%) achieves multiple effects: (a) the carrier concentration of SnTe is reduced through decreasing Sn vacancies via alloying high solution Pb atoms in the matrix; (b) the band structure is optimized through promoting the convergence of the two valence bands, simultaneously enhancing the Seebeck coefficient; (c) HAADF-STEM coupled with EDS results illustrate that guest Pb atoms randomly and uniformly occupied Sn atomic sites in the matrix, concurrently strengthening the phonon scattering. Furthermore, we introduced indium into Sn0.6Pb0.4Te system to create resonant states further enlarging the power factors at low-medium temperature. The integration of bands convergence and DOS distortion achieves a considerably high ZTave of ∼0.67 over the wide temperature range of 300–823 K in (Sn0.6Pb0.4)0.995In0.005Te sample.

An approach to the design of highly emissive salen–indium complexes is presented. A series of 4-NR2-appended salen ligands possessing an electron-accepting 1,2-dicyanoethylene bridge and their indium complexes (R = Me (1), Et (2), and Ph (3)) were prepared in high yields via a one-pot synthetic pathway. All compounds exhibited narrow-bandwidth red emission (full width at half maximum = 29–42 nm) with high photoluminescence quantum yields (PLQYs, 50%−74%) in toluene. Specifically, 4-NEt2-appended indium complex 2 showed the highest PLQY of 74%, which is among the highest reported for salen-based organometallic luminophores. In contrast, reference complex 4 lacking a 4-amino group was poorly emissive (PLQY < 2%). Theoretical studies suggest that the salen-centered electronic transitions in 1–3 are enhanced by strong electronic interactions between the 4-amino donor and the electron-accepting bridge.

Colloidal quantum dots (QDs) emitting in the infrared (IR) are promising building blocks for numerous photonic, optoelectronic and biomedical applications owing to their low-cost solution-processability and tunable emission. Among them, lead- and mercury-based QDs are currently the most developed materials. Yet, due to toxicity issues, the scientific community is focusing on safer alternatives. In this regard, indium arsenide (InAs) QDs are one of the best candidates as they can absorb and emit light in the whole near infrared spectral range and they are RoHS-compliant, with recent trends suggesting that there is a renewed interest in this class of materials. This review focuses on colloidal InAs QDs and aims to provide an up-to-date overview spanning from their synthesis and surface chemistry to post-synthesis modifications. We provide a comprehensive overview from initial synthetic methods to the most recent developments on the ability to control the size, size distribution, electronic properties and carrier dynamics. Then, we describe doping and alloying strategies applied to InAs QDs as well as InAs based heterostructures. Furthermore, we present the state-of-the-art applications of InAs QDs, with a particular focus on bioimaging and field effect transistors. Finally, we discuss open challenges and future perspectives.

In this paper, Zinc Indium Sulphide (ZnIn2S4) marigold like Microsphere are synthesized at 80 °C in aqueous solution by using Zinc sulphate ZnSO4, Indium sulphate In2(SO4)3 and Thioacetamide C2H5NS (TTA). We have characterized the nanopowder of the zinc Indium sulphide, by using various techniques, like UV–Vis spectrophotometer, Field emission scanning electron microscopy (FSEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The variation of optical properties in Zinc Indium sulphide by using UV–visible spectroscopy, to find the energy band gap (2.31 eV). The hexagonal phase was confirmed from the X-ray diffraction pattern of ZnIn2S4. We have used a simple route to synthesize the Zinc Indium Sulphide, which involves, no templates, no organic solvents or surfactants, and at low temperature (80 °C). Our synthesized Zinc Indium Sulphide have got promising applications in a wide range of areas like solar energy conversion, electrical nanodevices, photocatalysis, optical devices, and electrical devices, etc.

We demonstrate and compare indium and silicon as secondary cathode material for the analysis of flat, solid alumina and sapphire matrices by direct-current glow discharge mass spectrometry (dc-GDMS). The mask designs and the glow discharge conditions are optimised for signal ratio and absolute intensity. The mask material was found to be a small factor on matrix to mask ratio and signal intensity despite the large difference in properties between indium and silicon. The results indicate that the discharge conditions play the most significant role. The mask material did not appear to affect RSFs. On sapphire with indium, the possible discharge conditions and performance where limited due to a collapse in discharge. This was not the case for silicon, which proves to be a good alternative as secondary cathode material.

Indium tin oxide (ITO) nanoparticles synthesized by green combustion method using Carica papaya seed extract as a novel fuel and, indium (In) and tin (Sn) as precursor is presented in this paper. Indium nitrate and tin nitrate solution were prepared by dissolving the In ingots and Sn in nitric acid. Carica papaya seed extract was prepared using dried Carica papaya seeds. Carica papaya seed extract along with indium nitrate and tin nitrate solution was heated in muffle furnace at 600 °C for 1 h. The obtained powder was calcinated at 650 °C for 3 h to obtain ITO nanoparticles. The effect of Sn concentration (5%, 10% and 50%) on microstructure, dielectric and ac conductivity of ITO nanoparticles were studied. These properties were investigated using X-ray diffraction (XRD), scanning electron microscope (SEM), high resolution transmission electron microscope (HRTEM), UV–Vis spectroscopy, thermal gravimetry and differential scanning calorimetry (TG-DSC) and computer-controlled impedance analyser. The XRD analysis of synthesized ITO nanoparticles exhibits cubic bixbyite structure with increase in crystallite size from 17 nm to 22 nm as Sn concentration increases. SEM and HRTEM investigations exhibit an increase in grain size as Sn concentration increases. TG-DSC analysis reveals a constant weight in the temperature region 200 to 800 °C. The diffused reflectance spectral studies revealed that the band gap decreases from 3.01 eV to 2.75 eV as Sn concentration increases. The ac conductivity and dc conductivity of ITO nanoparticles was found to increase with increase in Sn concentration and temperature. With improved microstructural properties, higher optical band gap and increased ac conductivity, synthesized ITO nanoparticles with 10% Sn concentration are suitable material for sensor and optoelectronic applications.

The photocatalytic conversion of CO2 to fuels and useful chemicals is a valuable artificial photosynthesis approach that simultaneously addresses the valorization of CO2 emissions and the storage of solar energy. In this work, we show how indium doping influences the activity and selectivity of TiO2 as a CO2 reduction photocatalyst using water as the electron donor, and how silver nanoparticles deposited on the semiconductor surface reinforce these effects, leading to promising photocatalytic systems with enhanced performance. For that purpose, catalysts with different indium contents have been synthesized by a simple wet chemical method starting from anatase TiO2, and a selected In-doped sample has been further modified by silver decoration following an impregnation method. The catalysts have been thoroughly characterized using different physicochemical techniques and tested for UV photocatalytic CO2 conversion in a laboratory-made, continuous flow gas-phase reaction system. Characterization results point at a substitutional doping of indium into the anatase crystal structure, as inferred from the absence of additional phases visible by X-ray diffraction as well as Raman and UV-vis spectroscopy, and further supported by an expansion of the unit cell volume calculated from XRD profile refinement and ratified by DFT calculations, and the absence of In–In scattering in EXAFS spectra. This substitution does not modify the optical band gap of the synthesized catalysts but, according to XPS, theoretical calculation and fluorescence spectra, induces electronic modifications that reduce the n-type character and the electron–hole recombination rate. In-doped catalysts show an increased selectivity towards the highly reduced product CH4 in photocatalytic CO2 reduction tests, whereas the main product attained with undoped titania is CO. Silver decoration, which leads to the initial formation of silver oxides that are reduced to metallic Ag nanoparticles under the UV light used in the reactions, dramatically reduces electron–hole recombination and further enhances the selectivity to methane and ethane in CO2 photocatalytic conversion.

The ecosystems and human health were seriously threatened by hexavalent chromium (Cr(VI)) in wastewater. In this article, using the idea of the highly matched energy band structure between indium sulfide (In2S3) and MIL-53(Fe), a Type-II heterojunction has been constructed by loading In2S3 on MIL-53(Fe) microrod to overcome the fault like high recombination rates of photogenerated electron-holes of In2S3. The composite with 20:1 mass ratio of In2S3 to MIL-53(Fe) (IM-2) was adopted as an optimal sample for efficient photocatalytic Cr(VI) reduction under visible light. Various characterization techniques were used to verify the characteristics of composites and delved into the structure-effect relationship between this heterojunction and its activity. Results showed that the reaction rate constants of the photoreduction process over IM-2 was ~ 4 and 26 times higher than those of pure In2S3 and MIL-53(Fe), respectively, and the catalyst could maintain superior removal efficiency (88.6%) and steady crystal structure after four cycles. First-principles calculations further illustrated that the heterostructure formed between In2S3 and MIL-53(Fe) could effectively accelerate the separation of photogenerated electrons and holes, thus improving the photocatalytic reduction performance. Moreover, the active species analyses revealed that the superoxide radicals and electrons were mainly involved in the reduction of Cr(VI).

Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(iii) triazenide precursor and H2O. A temperature interval with self-limiting growth was found between similar to 270 and 385 degrees C with a growth per cycle of similar to 1.0 angstrom. The deposited films were polycrystalline cubic In2O3 with In : O ratios of 1 : 1.2, and low levels of C and no detectable N impurities. The transmittance of the films was found to be >70% in visible light and the resistivity was found to be 0.2 m omega cm. The high growth rates, low impurities, high optical transmittance, and low resistivity of these films give promise to this process being used for ALD of In2O3 films for future microelectronic displays. Funding Agencies|Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [SSF-RMA 15-0018]; Swedish Institute

Coordination polymers have received immense attention for proton conduction owing to their highly tunable and designable structures. Herein, based on the flexible ligand 5-(4-pyridine)-methoxyisophthalic acid (H2L), two novel highly chemically stable indium coordination polymers (In-CPs), InL(H2O)Cl·H2O (In–L–Cl) and InL(H2O)(NO3) (In–L–NO3), were synthesized through solvothermal methods. In–L–Cl and In–L–NO3 are isostructural, in which every individual In(III) atom connects to L2− to form a single layer, and coordinated Cl− and NO3− are inserted into the windows of the interlayers. Both of them possess high water and chemical stability. More importantly, the abundant Cl− and NO3− exposed in the interlayer can act as hydrogen bond acceptors to facilitate the formation of a dense hydrogen bonding network, thus improving proton transfer efficiently. Electrochemical impedance spectroscopy shows that In–L–Cl and In–L–NO3 display optimized proton conductivities of 1.88 × 10−3 and 1.00 × 10−3 S cm−1 at 100% relative humidity (RH) and 80 °C, respectively. The difference in proton conductivity of In–L–Cl and In–L–NO3 likely stems from the variations in the hydrogen bonding networks formed by lattice water and the different electronegativities of the coordinated anionic functional sites. This study provides an alternative way to prepare highly proton-conductive CPs.

The authors would like to thank KAUST Baseline Funds BAS/1/1664-01-01, Competitive Research Grants URF/1/3437-01-01 and URF/1/3771-01-01, and GCC Research Council REP/1/3189-01-01 for their support.

There is a great demand for high-performance hydrogen sulfide (H2S) sensors with low operating temperatures. Ag/In2O3 hexagonal tubes with different proportions were prepared by the calcination of Ag+-impregnated indium-organic frameworks (CPP-3(In)), and the developed sensors exhibit enhanced gas-sensing performance toward H2S. Gas sensing measurements indicate that the response of Ag/In2O3 (2.5 wt%) sensor to 5 ppm H2S has the highest response (119), operated at 70 °C. The Ag/In2O3 (2.5 wt%) based sensor exhibits short response time (20 s), low detection limit (300 ppb), and good selectivity toward H2S gas, which imply that the CPP-3(In)-derived Ag/In2O3 hexagonal tube is a promising candidate to be constructed a low power-consumption H2S sensor.

The oxygen transport membrane (OTM) has huge application prospects in gas separation and carbon neutralization based on oxygen enriched combustion. In this paper, the family 60 wt.%Ce0.9Pr0.1O2-δ-40 wt.%Pr0.6Sr0.4Fe1-xInxO3-δ (CPO-PSF1-xIxO, x = 0.01, 0.025, 0.05, 0.075, 0.1) cobalt-free dual-phase MIEC OTMs doped with indium have been successfully prepared by Pechini method. The phase structure, surface morphology, element distribution, oxygen permeability, and long-term operation stability of these OTMs are systematically explored. Among these OTMs, the champion oxygen permeable flux of CPO-PSF0.99I0.01O reaches 1.07 mL min−1·cm−2 and 0.80 mL min−1·cm−2 at 1000 °C under air/He gradient and air/CO2 gradient. Meanwhile, CPO-PSF0.99I0.01O maintains the value of 0.80 mL min−1·cm−2 steadily at 1000 °C for 100 h when pure CO2 as the sweep gas. The surface element distribution and phase structure of the OTMs after long-term oxygen permeability reaction are investigated by XRD, SEM combining with EDS, where the spent membranes retain the same structure and component as the fresh membranes, demonstrating that the In-doped OTMs have an excellent CO2 tolerance. Suitable indium substitution for iron of these OTMs not only improves the oxygen permeability, but also maintains the long-term reaction stability of the material.

In this work, we investigated the effect of the thickness on structural, morphological, optical, and electrical properties of In2O3 thin films synthesized via by sol–gel spin coating technique. The prepared samples were characterized by various techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray (EDX) spectra, UV-Vis-NIR spectrophotometer as well as the electrical measurements via the four-probe technique. The XRD analysis reveals that the films have a cubic crystalline structure, with (222) preferential orientation. The crystallite size values of the films were varied from 14 to 27 nm. The (SEM) images indicated that the homogenous and smooth surface with better adherent to the substrate surface. The EDX spectrum reveals the presence of In and O element necessary for In2O3 films for film formation. Excess of oxygen is observed due to the substrate contribution. The transmittance results exhibit that the films are highly transparent, more than 75% in the visible range from 400 nm to 800 nm is measured. The estimated band gap energy is found to increase with increasing film thickness (3.37–3.7 eV). The electrical resistivity of the In2O3 thin films substantially decreases with the increasing film thickness from 1.48×10-4 to 1.3×10-3 Ω.cm.

Gallium and its alloys, such as eutectic gallium indium alloy (EGaIn), a form of liquid metal, have recently attracted the attention of researchers due to their low toxicity and electrical and thermal conductivity for biomedical application. However, further research is required to harness EGaIn-composites advantages and address their application as a biomedical scaffold. In this research, EGaIn-polylactic acid/polycaprolactone composites with and without a second conductive filler, MXene, were prepared and characterized. The addition of MXene, into the EGaIn-composite, can improve the composite's electrochemical properties by connecting the liquid metal droplets resulting in electrically conductive continuous pathways within the polymeric matrix. The results showed that the composite with 50% EGaIn and 4% MXene, displayed optimal electrochemical properties and enhanced mechanical and radiopacity properties. Furthermore, the composite showed good biocompatibility, examined through interactions with fibroblast cells, and antibacterial properties against methicillin-resistant Staphylococcus aureus. Therefore, the liquid metal (EGaIn) polymer composite with MXene provides a first proof-of-concept engineering scaffold strategy with low toxicity, functional electrochemical properties, and promising antimicrobial properties.

The transformation from silent to functional synapses is accompanied by the evolutionary process of human brain development and is essential to hardware implementation of the evolutionary artificial neural network but remains a challenge for mimicking silent to functional synapse activation. Here, we developed a simple approach to successfully realize activation of silent to functional synapses by controlled sulfurization of chemical vapor deposition-grown indium selenide crystals. The underlying mechanism is attributed to the migration of sulfur anions introduced by sulfurization. One of our most important findings is that the functional synaptic behaviors can be modulated by the degree of sulfurization and temperature. In addition, the essential synaptic behaviors including potentiation/depression, paired-pulse facilitation, and spike-rate-dependent plasticity are successfully implemented in the partially sulfurized functional synaptic device. The developed simple approach of introducing sulfur anions in layered selenide opens an effective new avenue to realize activation of silent synapses for application in evolutionary artificial neural networks.

Journal of radioanalytical and nuclear chemistry (2021). doi:10.1007/s10967-021-08102-2, Published by Springer Science + Business Media B.V., Dordrecht [u.a.]

Nowadays, high-quality metal oxide thin film transistors grown by solution process have the most potential to replace the traditional a-Si TFT as the next generation of transparent electronics for various applications. However, the low intrinsic carrier concentration and poor charge carrier mobility of metal oxide thin film hinder its development. In order to solve these problems, the heterojunction structure was proposed. In this study, the Indium Oxide/Indium Gallium Oxide (In2O3/IGO) heterojunction was systematically investigated, and the existence of a two-dimensional electron gas was found. There is a large accumulation of carriers at the In2O3/IGO heterojunction interface, and the Hall tests show that the In2O3/IGO heterojunction has the highest carrier concentration of 7.82 × 1012 cm−2 and a carrier mobility of 10.22 cm2V−1s−1. This research can provide a theoretical guidance for promoting the development of oxide thin film transistor technology.

The copper indium gallium selenium (CIGS) thin film is recognized as the most potential material for photovoltaics applications, and the thin film solar cell with flexible substrate makes the application scenarios more extensive and the product advantages more obvious. In this contribution, we prepared high efficiency CIGS thin film solar cells on flexible stainless steel substrate by three-stage coevaporation method. In this study, silicon dioxide film was proposed as the diffusion barrier layer of iron, chromium and other impurity elements in stainless steel flexible substrate to the CIGS absorber, which were found to reduce the performance of the device. The thickness of the SiO2 barrier layers varying from 0 to 1000 nm was studied. The structure, crystal morphology and electrical properties of each sample were studied. The results showed that the conversion efficiency increased with the increase of thickness of sputtered silicon dioxide barrier until the thickness is greater than 200 nm.

This thesis consists of studies aiming to answer questions regarding the pathophysiology (ie. the role of antiglycoprotein antibodies) and treatment options (such as romiplostim and eltrombopag) in immune thrombocytopenia (ITP). Furthermore, it gives examples of initiatives for implementation of PROMs in the ITP population.

The semiconductor material of ternary alloy of Indium and Aluminum nitride (InxAl1-xN) has interesting properties for potential optoelectronic applications and solar cells as well. In the present research, layers of In0.63Al0.37 N were synthesized using the DC reactive sputtering magnetron technique, on p-type silicon substrates (100), ITO/PET, and ITO/Glass. The reason why an intermediate layer of ITO was placed on the PET and Glass substrates is that possibly in an InAlN thin-layer solar cell, the ITO would fulfill the role of Conductive Transparent Oxide (CTO). This CTO would be located between the window layer and the transparent substrate. On the other hand, in the case of a hetero-union solar cell, InAlN-n would be located on the Si-p material, in order to form the p–n junction. Therefore, the present work allowed us to study subsystems in which the InAlN would be part of the window layer in three different types of solar cells.

Phytoextraction uses plants to accumulate valuable elements into their biomass from soil or water. The hyperaccumulator plant Eleocharis acicularis was used to extract indium, a strategic element, ...

In recent years, much effort has been devoted to the development of effective anticancer agents. In this manner, the utilization of water-soluble sulfonated phthalocyanines is crucial for many cancer cell lines. In this study, phthalonitrile and metallophthalocyanine compounds linked by benzenesulfonic acid groups have been prepared. Antimicrobial behaviors of those compounds were investigated by performing disk diffusion and photodynamic assays on gram-positive and negative bacteria. Indium phthalocyanine (InClPc) (3) showed inhibition activity against B. cereus, B. subtilis and S. aureus with disk diffusion assay. Also, gallium and indium phthalocyanines (2 and 3) exhibited inhibitory activity on both gram-positive and -negative microorganisms after light activation. Increasing the inhibitor concentration and light exposure time increased the inhibition activity for both molecules. GaClPc (2) demonstrated the maximum reducing power capacity among studied compounds, and CoPc (4) showed even better DPPH radical scavenging ability than the standard molecule Trolox at 2000 mu g mL(-1) concentration. The dose-dependent effect of compounds on cytotoxicity was studied against cancer cells PANC-1, MDA-MB-231, HepG2, A549, HeLa, CaCo-2 and non-tumorigenic cells HEK-293. All compounds showed no significant cytotoxic effect on any cell line up to the highest treated concentration at 50 mu g mL(-1). However, all phthalocyanines had significant nitric oxide inhibition activity, and only in copper phthalocyanine (CuPc) (5), the MTT IC50 value was reached on LPS-activated RAW 264.7 macrophage cells. The lowest inducible nitric oxide synthase (iNOS) IC50 values were defined as 6 +/- 1 mu g mL(-1) and 7 +/- 0.5 mu g mL(-1) for CuPc (5) and InClPc (3), respectively.

Indium phosphide (InP) nanocrystals are emerging as an alternative to heavy metal containing nanocrystals for optoelectronic applications but lag behind in terms of synthetic control. Herein, luminescent wurtzite InP nanocrystals with narrow size distribution were synthesized via a cation exchange reaction from hexagonal Cu3P nanocrystals. A comprehensive surface treatment with NOBF4 was performed, which removes excess copper while generating stoichiometric In/P nanocrystals with fluoride surface passivation. The attained InP nanocrystals manifest a highly resolved absorption spectrum with a narrow emission line of 80 meV, and photoluminescence quantum yield of up to 40%. Optical anisotropy measurements on ensemble and single particle bases show the occurrence of polarized transitions directly mirroring the anisotropic wurtzite lattice, as also manifested from modeling of the quantum confined electronic levels. This shows a green synthesis path for achieving wurtzite InP nanocrystals with desired optoelectronic properties including color purity and light polarization with potential for diverse optoelectronic applications.

Thin-film transistors based on amorphous oxide semiconductors could be used to create low-cost backplane technology for large flat-panel displays. However, a trade-off between mobility and stability has limited the ability of such devices to replace current polycrystalline silicon technologies. Here we show that the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects is determined by the location of the conduction-band minimum and the relevant doping ability. Using bilayer-structured thin-film transistors, we identify the exact charge-trapping position under bias stress, which shows that the Fermi-level shift in the active layer can occur via electron donation from carbon-monoxide-related impurities. This mechanism is highly dependent on the location of the conduction-band minimum and explains why carbon-monoxide-related impurities greatly affect the stability of high-mobility indium tin zinc oxide transistors but not that of low-mobility indium gallium zinc oxide transistors. Based on these insights, we develop indium tin zinc oxide transistors with mobilities of 70 cm2 (V s)–1 and low threshold voltage shifts of –0.02 V and 0.12 V under negative- and positive-bias temperature stress, respectively. By understanding the origins of instability in high-mobility amorphous oxide transistors, ultrastable thin-film transistors with mobilities of 70 cm2 (V s)–1 can be fabricated.