1. A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs
- Author
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Junkai Huang, Wanling Deng, Fei Yu, Chuanzhong Xu, Xiaoyu Ma, and Gongyi Huang
- Subjects
Surface (mathematics) ,surface potential ,Scale (ratio) ,Computer Networks and Communications ,back-channel potential ,Computation ,lcsh:TK7800-8360 ,Silicon on insulator ,02 engineering and technology ,01 natural sciences ,Approximation error ,0103 physical sciences ,Hardware_INTEGRATEDCIRCUITS ,Electrical and Electronic Engineering ,Drain current ,010302 applied physics ,Coupling ,Physics ,full-depletion ,silicon-on-insulator MOSFETs ,lcsh:Electronics ,Mode (statistics) ,021001 nanoscience & nanotechnology ,Computational physics ,Hardware and Architecture ,Control and Systems Engineering ,Signal Processing ,analytical I-V model ,0210 nano-technology - Abstract
A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal&rsquo, s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10&minus, 7 V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal&rsquo, s experimental data. High computation accuracy and efficiency suggest that this analytical I-V model displays great promise for SOI device optimizations and circuit simulations.
- Published
- 2019
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