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Amorphous InGaZnO (a-IGZO) is a candidate material for thin-film transistors (TFTs) owing to its large electron mobility and good uniformity over large area. a-IGZO TFTs drain current models are essential for further pushing both a-IGZO TFTs technology and circuit design. In this paper, we propose a simple physical-based and analytical model of the drain current of a-IGZO TFTs. The model is valid in both non degenerate and degenerate conduction and it accounts for deep interface states, tail localized states, and free delocalized band states. The model is validated with the measurements of both coplanar and staggered a-IGZO TFTs. It provides key physical and material parameters of the transistor and, owing to its class C∞ formulation, it can be straightforwardly implemented in circuit simulators. [ABSTRACT FROM PUBLISHER]