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The incorporation of 3d magnetic ions into intrinsic semiconductors is one of the sophisticated way to tune their opto-magnetic behavior but dire need is to determine the functional changes resulting from doped-ions. Here, dysprosium (Dy) ions have been doped into CdS nanostructures via co-precipitation technique and studied their influence in optical and magnetic properties. The PL of doped-nanostructures exhibited violet, blue (454.5 nm) and orange emissions, simultaneously. The violet emissions correspond to the band edge (BE) emission of CdS and blue emissions appeared due to the f-f transition from Dy4+ to Dy3+ and Dy3+. Burstein-Moss-Effect explains the increased band-gap observed in the doped samples. VSM studies show the formation of ferromagnetism in a diamagnetic CdS nanostructure due to the successful incorporation of Dy3+ ions into CdS which can play a significant role in tuning their optical and magnetic properties for potential applications in optical devices and spintronics. • First synthesis of dysprosium-doped CdS nanostructures via chemical coprecipitation method. • Dy3+ ions related emissions detected for the first time in wide bandgap semiconductors. • Inclusion of Dy3+ ions turn diamagnetic CdS into ferromagnetic material. • These materials show promise for optoelectronic and spintronic applications. [ABSTRACT FROM AUTHOR]

• Doping of transition-metals i.e. chromium in CdS 1D nanoneedles. • First study about the Cr-effect on optical and magnetic properties of 1D Cr-doped CdS nanoneedles. • Role of Cr in CdS nanoneedles for tunable emission. • Detection of luminescence related to chromium for the first time. • Chromium incorporated into CdS nanoneedles produced emission in the infrared region. • Cr-doped CdS nanoneedles showed ferromagnetism. Spin controlled diluted magnetic semiconductors (DMSs) could bring revolution in the processing speed as well as in enhancing the storage capacity. To achieve its industrial application, several impurities have been doped from the 3d/4f into semiconductors, however, Cr has not yet been doped into CdS 1D nanostructures. Here, in the present study, we report on the Cr-doped CdS 1D nanoneedles synthesized by CVD and studied its optical and magnetic properties. The successful incorporation of Cr-ions into CdS confirmed by EDX and XRD. Along with the increase in Cr-ions concentration, first PL-peak shifted from 514.1 to 558.3 nm associated with the formation of excitonic magnetic polarons (EMPs) and the second peak centered at 993.8 nm may correspond to the aggregation of Cr-ions. For the first time, we tuned CdS emission up to ~ 482 nm covering visible spectral region up to near-infrared (NIR) region. With increasing the Cr-ions concentration up to 6.2%, saturation magnetization (Ms) was significantly enhanced from 0.614 × 10−3 Am2/kg to 0.987 × 10−3 Am2/kg. These findings will promote their future applications in the optoelectronic and spintronic devices. [ABSTRACT FROM AUTHOR]

Self-assembled metal-semiconductor nanostructures for the fabrication of integrated circuitry nanodevices are currently actively pursuited. One prominent example is the one-dimensional semiconductor (CdS) nanobelt on metallic (Cd) heterojunction. In this work, we have synthesized hexagonal Cd micro-rods, Cd micro-spheres and Cd-CdS micro/nano hetrostructures using a simple chemical vapor deposition (CVD) method. In addition to the optimization of synthesis parameters for these micro/nanostructures, we explored the effect of the inclination angle between the substrate and the furnace on the morphologies of these products. Using a range of characterization tools including scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDXS), X-ray photoelectron spectroscopy (XPS), we characterized these micro/nanostructures and found them to be of high quality crystals. Moreover, we performed photoluminescence and lifetime decay studies to confirm that heterostructures are composed of metal-semiconductor heterojunction. These micro/nano-heterostructures are anticipated to be used in photocatalysis and photoelectronic devices. [ABSTRACT FROM AUTHOR]