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In this paper, we focus on optimizing the solar performance of a CZTSSe-based solar cell by adjusting the zinc and sulfur concentrations in the CdZnS buffer layer and the quinary absorber CZTSSe. The state-of-the-art work is to combine the ZnS and CdS binaries into CdZnS ternary used as a buffer layer in both CZTS- and CZTSSe-based solar cells. An overall study of its properties is carried out taking into account the strain present at the heterointerface, defect density, bandgap energy and the interface state density. As a result, the highest efficiency η = 14.59% was achieved with a sulfur content of 0.55 and a zinc content of 0.70 to bandgap energies of 1.25 and 3.12 eV for CZTSSe and CdZnS materials, respectively. Our simulation is validated by the reproducibility of solar cell performance under the same conditions, and an enhancement of the conversion efficiency of about Δη = 5.55% will be achieved when the CdS layer is replaced by CdZnS in the ZnO/CdS/CZTSSe/Mo/Glass solar device. [ABSTRACT FROM AUTHOR]

Summary: This effort is founded on the modeling and simulation of the GaAsPN/GaP quantum dot (QD) solar cell. This quaternary alloy is one of the III‐V semiconductors, which gained importance in the recent years for optoelectronic applications. This importance comes from the fact that the quaternary GaAsPN can be a well‐grown lattice matched to GaP and Si substrates and to the bandgap that can be decreased drastically with the incorporation of nitrogen and arsenic into GaP, improving consequently the absorption and the wavelengths near the red part. These qualities make GaAsPN a good candidate for the growth on the Si substrate and low‐cost solar cell fabrication. The optical properties of GaAsPN/GaP QDs, such as strain, critical thickness, bandgap energy, the external quantum efficiency, and absorption coefficient, have been reported. The heterostructures consist of GaAs0.18P0.814N0.006 QDs separated by GaP barrier layers. The width and thickness of QDs are about 5 and 5 nm, respectively. Our results have been shown that 20 GaAs0.18P0.814N0.006/GaP QD layers produce a short‐circuit current of about 3.55 mA/cm2 and an efficiency of about 7.5%. In addition, we will be able to extend the absorption edge of a GaP solar cell from 0.48 μm to 0.5 μm for the same QD number layers inserted. The temperature effect on efficiency is considered. [ABSTRACT FROM AUTHOR]

This paper focuses on studying and simulating a GaAs1-xPx/Si1-yGey/Ge triple-junction solar cell structure. First, the strain and the bandgap energy associated to the SiGe layer have been studied. The optimal germanium concentration is 0.88 with a strain around 0.45%. Then, the phosphor concentration effect on the strain and the bandgap energy of the upper layer GaAs1-xPx/Si0.12Ge0.88 has been optimized. At room temperature, the optimal output parameter reach Jsc=34.41mA/cm², Voc=1.27V, FF=88.42% and =38.45% for an absorber thickness of 4.5µm and x=0.47, with a strain that doesn't exceed 1.5%. This study has enabled us to design a high-efficiency, low cost 3J solar cell. [ABSTRACT FROM AUTHOR]

• We report the modelling and optimization of a solar cell based on new material using SCAPS software. • A high absorption coefficient was found. • The influence of thickness, temperature, resistances and defects on the different electrical parameters. • A high conversion efficiency was obtained under optimum parameters. • A respectable compatibility has been shown compared with the results of wxAMPS software. Based on several semiconductor research, we have studied one of the new semiconductors, due to its exciting physical proprieties that in turn solve some problems in the photovoltaic's industry. We have divided this work into two parts. The first part, is to study the optical proprieties of ZnSnN 2 , as calculation of the absorption coefficient, bandgap, reflection coefficient, and transmission coefficient. As for the second part, a study of some parameters that affect the efficiency of p-CuCrO 2 (CCO)/ n-ZnSnN 2 (ZTN) solar cell using SCAPS-1D software, and our results are compared with the results of another software (wxAMPS), where results showed great compatibility with the presence of weak uncertainty. We have studied the influence of many parameters such as the thickness of the absorber layer (n-ZnSnN 2), the thickness of the buffer layer (p-CuCrO 2) , the temperature, the series resistance (R s), the shunt resistance (R sh) and the defect density on the performance of ZnSnN 2 solar cells which included in the real device. The photovoltaic parameters have been calculated using AM1.5G solar irradiance at the intensity of one sun, a temperature of 300 K, and considering the flat band condition at the interface. We have been achieving a high-efficiency of η ≈ 22% without defects. Given the characteristics of this new semiconductor ZnSnN 2 , which composed of earth-abundant, non-toxic and inexpensive element, as well as a high absorption coefficient, it can be considered as an alternative for PV and optoelectronic applications. [ABSTRACT FROM AUTHOR]

This paper reports simulations of gradual bandgap CIGS absorber and its impact on the characteristics of a solar cell. The bandgap of the CIGS absorber varies linearly and drops from E gmax (at the junction limit) to E gmin (in the vicinity of the rear contact).We introduce an effective absorption coefficient based on this variation. We will demonstrate that this gradual profile contributes to an improvement up to 171 mV of the open circuit voltage V oc of the cell that is linked to the modification of the internal electrical field distribution within the absorber. However, a joint reduction of 1.50 mA/cm 2 of short circuit current density, J sc , is observed. Overall, the conversion efficiency increases from 19.2%, for a uniform bandgap absorber structure, to 24.9% in that case of gradual bandgap. Additionally, we investigate the impact of absorber thickness and temperature on cell characteristics. [ABSTRACT FROM AUTHOR]

In this work, the performance of solar cell based on CdS-n/Cu 2 ZnSnS 4 -p hetero-junction is numerically simulated. The aim of the study is to investigate the influence of thickness, defects density and bandgap energy of absorber layer CZTS and the thickness of the buffer layer CdS of the solar cell on electrical parameters J sc , V oc , FF and efficiency η of the cell. The results of our simulation allowed us to optimize the parameters above mentioned in order to get the best efficiency at the optimal band gap which corresponds to the maximum of the solar spectrum with optimal values of the electrical performances of the cell. This results lead to develop CZTS solar cells with high efficiency and low cost and give a help full indication for fabrication process. [ABSTRACT FROM AUTHOR]

The electrical properties of InAsP/Si quantum dot solar cell (QDSC) are numerically studied and analyzed in this paper. Many effects like number of quantum dot (QD) layers inserted and Arsenic content of InAs x P 1-x on photovoltaic properties such as current density-voltage J-V and the external quantum efficiency (EQE) are investigated. Our results have been shown that the optimal Arsenic content is 0.6. With 30 InAsP/Si QDs layers, relative enhancements of about 7% and 6.70% of short-circuit current and efficiency are achieved, respectively. Otherwise, the absorption range edge of low energy photons was extended from 1120 to 1200 nm. This reveals that introduction of QDs in the intrinsic region of p -i- n Silicon (Si) solar cell enhances significantly the device characteristics beyond what has been reported for conventional semiconductor-based solar cells. [ABSTRACT FROM AUTHOR]

In recent years, the development of quantum well solar cells QWSCs (Quantum Well Solar Cells) has generated a great deal of interest. These configurations have shown good promise to optimize the low conversion efficiency of conventional solar cells because of the high rate of absorption losses present in them. In this work, we are interested in modeling and simulation of two different structures of solar cells, a simple solar cell based on silicon Si and a quantum well solar cell SiGe/Si. When a solar cell is compared to 80 quantum well layers of Si 0.8 Ge 0.2 with a pin solar cell based on Si. The short circuit current J sc increases from 23.55 to 37.48 mA/cm 2 with a relative increase of 59.15% found. In addition, the limit of the absorption band of the lower energy photons extends from 1100 nm to 2000 nm. [ABSTRACT FROM AUTHOR]