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This article proposes a quad-core millimeter-wave (mm-wave) oscillator using E-M mixed-coupling resonance boosting. The mixed-coupling resonator is introduced to generate four reconfigurable resonances. The magnetic coupling and electric coupling are achieved by the symmetrically coupled transformer and coupling capacitor, respectively. A 2-D mode switch array is introduced to couple the quad-core and achieve the quad-mode switching without degrading the performance of the selected mode. Therefore, the reduction of phase noise and the extension of tuning range are achieved simultaneously. Meanwhile, the digitally controlled tail-resistor array is used to optimize the flicker noise up-conversion in wideband. Prototyped in 40-nm CMOS, the proposed oscillator exhibits a 73.2% tuning range from 18.6 to 40.1 GHz. The best phase noise at 1-MHz offset is −108.5 dBc/Hz, corresponding to an figure-of-merit (FoM) of 184.4 dBc/Hz and FoMT of 201.7 dBc/Hz. The variation range of FoM over the whole frequency range is 3 dB. The 1/ƒ3 phase noise corner is 220–620 kHz. [ABSTRACT FROM AUTHOR]

A wideband hybrid mode-switching push–push oscillator with low phase noise is presented in this paper. To achieve the wide tuning range, the inductive and capacitive hybrid mode-switching technique is proposed for the first time. It introduces more freedom of design parameters (i.e., inductance and capacitance) in the resonant tank. Under certain tuning range requirement, the hybrid mode-switching oscillator achieves higher input impedance of the resonator compared to the conventional mode-switching oscillators. Meanwhile, a transformer-coupled inductor ring with symmetrical layout configuration is proposed to realize the switch-less hybrid mode switching, which further improves the circuit performance at sub-THz. Therefore, a good phase noise performance can be obtained within a wide tuning range, which leads to a relaxed tradeoff between the phase noise and tuning range. To verify the aforementioned mechanism operating at sub-THz band, a hybrid mode-switching oscillator based on the dual-mode push–push topology is proposed and fabricated in a conventional 28-nm CMOS technology. The measured results show a 21.7% tuning range with the center frequency of 169.6 GHz and a state-of-the-art FoMT of −180.6 dBc/Hz. The core circuit only occupies 0.039 mm2, while drawing 95 mW with a 0.9-V supply. [ABSTRACT FROM AUTHOR]