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In this paper, we will provide information on the growth mechanism of 3C-SiC using alternating supply deposition (ASD). SiH 4 and C 3 H 8 were introduced successively in a low-pressure chemical vapor deposition (LPCVD) system at 1000 °C, forming a stoichiometric polycrystalline 3C-SiC thin film on Si substrates. We demonstrate the influence of different gas flow rates on thin film properties. In detail, altering the flow rates of the precursors and the carrier gas resulted in changes of the growth rate, the surface roughness, the crystal growth mechanisms as well as the crystal quality. Hydrogen inhibition and passivation are proposed to be the main effects influencing the growth behavior of ASD thin films. Applying ASD to grow 3C-SiC thin films with precursors from low to high flow rates resulted in a transition of different growth mechanisms influencing the surface roughness and grain size. Furthermore, we could prove that ASD is a cyclic step-by-step carbon-assisted redistribution of a prior deposited silicon film. This is shown by contact angle measurements of three differently terminated surfaces during the specific phases of one ASD cycle. High resolution transmission electron microscopy (HRTEM) analysis showed a continuous and homogenous thin film and confirmed the absence of silicon- or carbon-rich layers. ASD enables 3C-SiC thin films with customized properties for tailored micro electromechanical system (MEMS) applications. [Display omitted] • Tailored 3C-SiC thin film properties for MEMS applications using alternating supply deposition (ASD). • Discussion of control parameters affecting 3C-SiC properties during deposition. • Changes of the gas flow shows high impact on the roughness and crystallinity. • Characterization of the carbonization layer at the 3C-SiC/Si interface. • Insights into alternating supply deposition (ASD) growth mechanism. [ABSTRACT FROM AUTHOR]