Search

We demonstrate a non-monotonic evolution of in-plane thermal conductivity of large-area hexagonal boron nitride films with thickness. Wrinkles and defects/impurities are present in these films. Raman spectroscopy, an optothermal non-contact technique, is employed to probe the temperature and laser power dependence property of the Raman active E2ghigh phonon mode, which, in turn, is used to estimate the rise in the temperature of the films under different laser powers. As the conventional Fourier law of heat diffusion cannot be directly employed analytically to evaluate the thermal conductivity of these films with defects and wrinkles, finite-element modeling is used instead. In the model, average heat resistance is used to incorporate an overall near-surface defect structure, and Voronoi cells with contact resistance at the cell boundaries are constructed to mimic the wrinkled domains. The effective in-plane thermal conductivity is estimated to be 87, 55, and 117 W/m K for the 2, 10, and 30 nm-thick films, respectively. We also present a quantitative estimation of the thermal resistance by defects and wrinkles individually to the heat flow. Our study reveals that the defects/impurities render a much higher resistance to heat transfer in the films than wrinkles. [ABSTRACT FROM AUTHOR]

Recently, the electron mobility in wedge-shaped c-GaN nanowall networks has been estimated to cross the theoretical mobility limit for bulk GaN. Significant blue-shift of the bandgap has also been observed. Both the findings are explained in terms of two-dimensional electron gas (2DEG) formed at the central vertical plane of the walls due to the polarization charges at the two inclined faces. Carrier concentration and mobility have earlier been determined from thermoelectric power and conductivity measurements with the help of a statistical model. Due to the network nature of the system, direct measurements of these quantities from Hall experiments are not possible. Search for a better way to estimate mobility in this system thus becomes important. Since, strain can also lead to the blue-shift of the bandgap, it is also imperative to evaluate carefully the role of strain. Here, using Raman spectroscopy, we have estimated carrier concentration and mobility in these nanowall networks with varied average tip-widths. Depth distribution of strain and luminescence characteristics are also studied. The study reveals that strain has no role in the bandgap enhancement. Moreover, the electron mobility, which is determined from the lineshape analysis of the A1(LO)-plasmon coupled mode in Raman spectra, has been found to be significantly higher than the theoretical limit of mobility for bulk GaN for the same electron concentration. These results thus corroborate the picture of polarization induced vertical 2DEG formation in these walls as predicted theoretically. [ABSTRACT FROM AUTHOR]

Wafer-scale thin films of hexagonal boron nitride have exceptional thermal and mechanical properties, which harness the potential use of these materials in two-dimensional electronic, device applications. Along with unavoidable defects, grains, and wrinkles, which develop during the growth process, underlying substrates influence the physical and mechanical properties of these films. Understanding the interactions of these large-scale films with different substrates is, thus, important for the implementation of this 2D system in device fabrication. MOVPE-grown 2 and 30 nm hBN/sapphire films of size 2 in. diameter are delaminated chemically and transferred on quartz, SiO2/Si, and sapphire substrates. The structural characteristics of these films are investigated by employing Raman spectroscopy. Our results suggest that not only the roughness but also the height modulation at the surface of the substrates play a pivotal role in determining substrate-mediated mechanical strain inhomogeneity in these films. The statistical analysis of the spectral parameters provides us with the overall characteristics of the films. Furthermore, a Stark difference in the thermal evolution of strain in these films depending on substrate materials is observed. It has been demonstrated that not only the differential thermal expansion coefficient of the substrates and the films, but also slippage of the latter during the thermal treatment determines the net strain in the films. The role of the slippage is significantly higher in 2 nm films than in 30 nm films. We believe that the observations provide crucial information on the structural characteristics of the substrate-coupled wafer-scale hBN films for their future use in technology. [ABSTRACT FROM AUTHOR]

Half-metallic ferromagnetic full Heusler alloy NiFeMnSn is a promising material in spintronic device fabrication as it carries high spin polarization and high Curie temperature (Tc = 405 K). Understanding electronic excitations in a spin-polarized band structure is essential for the further use of this material in spin-based devices and to optimize the spin-dependent electronic structure in related compounds. In this Letter, we report electronic Raman scattering of NiFeMnSn with spectral signatures at a higher wavenumber than expected from the calculated phonon modes of the system. Temperature-dependent Raman spectroscopy demonstrates a non-monotonic behavior of the Raman shift with temperature across Tc. The orbital resolved electronic density of states and electronic band structure for both spin channels of the system, as obtained from the first principles density functional theory calculations, suggest that the observed Raman signatures originate from the Fe d orbital and its splitting due to the crystal field near the Fermi level. Furthermore, a strong magnetic field dependence of the spectral profile is observed. The study not only exhibits electronic Raman scattering in a Heusler alloy compound, which was unexplored to date, but also establishes Raman scattering as a promising probe to study the orbital-resolved partial density of states in the band structure near the Fermi level of a Heusler alloy. [ABSTRACT FROM AUTHOR]

Single crystals of the iron-pnictide compound BaFe 2 (As 1 − x P x) 2 for x ∼ 0.23, with a doping concentration near quantum criticality and enhanced nematic fluctuating state in the doping-temperature phase diagram, have been studied. Transport measurements confirm the presence of a magneto-structural transition at 60 K from the tetragonal to the orthorhombic phase, followed by a superconducting transition below 16 K. Micro-Raman spectra of the compound exhibit a phonon mode at 211 cm−1 and two broad modes (BMs) at 515 cm−1 and 635 cm−1, which corresponds to an energy difference of 15 meV. The temperature dependent Raman measurements reveal that the intensity of these BMs drop over the temperature range between 80 K and 300 K. In the non-superconducting state, strong anisotropic behaviour is observed for these BMs in polarization dependent Raman scattering. Electronic structure calculations for doped and undoped BaFe 2 As 2 show that while Fe d x z and d y z orbitals do not split in the tetragonal phase, the splitting energy is 13.5 meV in the orthorhombic phase of the doped system, which is reasonably close to the experimentally observed value of the energy separation of the BMs. We believe that the reported BMs are consistent with the signature of electronic Raman scattering involving the crystal field levels of d -orbitals of Fe2＋ due to local breaking of the C 4 symmetry in the doped system. • Local symmetry breaking in tetragonal phase of P doped BaFe 2 As 2 near quantum critical point. • Signature of crystal field splitting using temperature dependent micro Raman spectroscopy. • Calculation of Fe d orbitals split energies in local orthorhombic phase using DFT. [ABSTRACT FROM AUTHOR]

Phonon modes and their association with the electronic states have been investigated for the metallic EuCu 2 As 2 system. In this work, we present the Raman spectra of this pnictide system which clearly shows the presence of seven well defined peaks above 100 cm -1 that is consistent with the locally non-centrosymmetric P4/nmm crystal structure, contrary to that what is expected from the accepted symmorphic I4/mmm structure. Lattice dynamics calculations using the P4/nmm symmetry attest that there is a commendable agreement between the calculated phonon spectra at the Γ point and the observed Raman mode frequencies, with the most intense peak at∼232 cm -1 being ascribed to the A1gmode. Temperature dependent Raman measurements show that there is a significant deviation from the expected anharmonic behaviour around 165 K for the A1gmode, with anomalies being observed for several other modes as well, although to a lesser extent. Attempts are made to rationalize the observed anomalous behavior related to the hardening of the phonon modes, with parallels being drawn from metal dichalcogenide and allied systems. Similarities in the evolution of the Raman peak frequencies with temperature seem to suggest a strong signature of a subtle electronic density wave instability below 165 K in this compound., (© 2024 IOP Publishing Ltd.)