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ZnO/diamond hetero-junction diodes have been fabricated for the first time. The structure of the diode was n-type ZnO film/p-type diamond film on the {111} surface of a crystalline diamond. The contact between the n- and p-type semiconductors was found to be improved. The ratio of forward current to the reverse current exceeded 120 within the range of applied voltages of −4 to +4 V. The diode possessed an optical transmission of 50–70% in 500–700 nm wavelength regions. [Copyright &y& Elsevier]

Low-threshold heterojunctions have been formed from a boron-doped p-type diamond layer grown epitaxially on the {1 1 1} surface of a Si-treated single crystalline cubic boron nitride. The resistivity of the Si-treated cubic boron nitride was 0.1 Ω cm. With the resistivity of 0.1 Ω cm, which is lower than that of the sample prepared by conventional high-temperature and high-pressure method, the turn-on voltage and the highest current of the heterojunction are 0.5 V and 1 mA, respectively. [Copyright &y& Elsevier]