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With the rapid development of electronic industry, high‐energy storage density dielectric materials are urgently needed to meet electronic components equipment miniaturized demand. Polymer dielectric materials have the advantages of good flexibility and high breakdown field, however, the energy storage capacity of polymers is limited by its inherent low dielectric constant. To improve the dielectric constant and energy storage density of the polymer material, we synthesized 0D (zero dimension), 1D, 2D lanthanum modified lead zirconate titanate (PLZT) fillers which introduced into polyvinylidene fluoride (PVDF) matrix. The anisotropic of the fillers has obvious improvement on the properties of materials. Compared with 0D fillers, high anisotropic fillers are more effective in enhancing the dielectric performances and energy density of PVDF based composites. The high anisotropic ratios of 2D fillers limit the charge migration toward the electrodes and hold back the growing electric tree during breakdown. Consequently, high breakdown strength (430 MV/m) and high discharge energy density (13.9 J/cm3) for 2D PLZT/PVDF composite films were obtained. This work is of critical significance in making dielectric capacitors for energy storage devices and reveals the influence mechanism for different dimensions fillers on the dielectric and energy storage properties of PVDF based composites. [ABSTRACT FROM AUTHOR]

• A new P-type transparent conductive LaSe 2 film with excellent photoelectric properties is found. • A novel two-step method is used to prepare LaSe 2 film. • Effect of annealing time on their photoelectric properties is investigated. • Results indicate that the best annealing time is 2 h. LaSe 2 films were prepared on sapphire (0001) substrates by combining magnetron sputtering and selenized annealing. The influence of selenized annealing time on the structures and photoelectric properties of the thin films were investigated using glancing incident X-ray diffraction, fourier transform infrared spectrometry and Hall effect measurements. The results showed that the film had a perfect monoclinic structure and a smooth surface morphology. The average transmittance in the mid-infrared range was greater than 55%, and the highest was 65%. The LaSe 2 films had a higher carrier concentration (∼1019 cm−3) and conductivity (∼1.9 S/cm) than those of other P-type transparent conductive films, which showed that LaSe 2 was a potential new P-type material. [ABSTRACT FROM AUTHOR]

Abstract The hydrated magnesium-carbon films fabricated in this study demonstrated that grain growth and crystallinity modification by substrate temperature treatment crystallization produce films with fewer internal imperfections. This results in high mobility of the solution-deposited hydrated magnesium-carbon electrical conductance, with a corresponding dramatic harmonious transmittance in the infrared range. An investigation of the hydrated magnesium-carbon films shows that the temperature treatment dramatically improves the electron mobility and decreases the carrier concentration, which in turn simultaneously increases the conductivity and transparency. The hydrated magnesium-carbon films exhibit a mobility of up to 85.2 cm2/(V·s) and the resistivity declines rapidly to 1.72 × 10−2 Ω·cm. The transmittance of the visible spectrum increased to 90%. Although the conductivity of hydrated magnesium-carbon films is not prominent comparing to the conventional and widely-used n-type TCO materials, e.g. ITO, the films also showed excellent optical properties, which can be attributed to their low bond energy, with the infrared transmittance of the films being greater than 70% for a plasma wavelength of approximately 10 μm. Graphical abstract Unlabelled Image Highlights • The hydrated magnesium-carbon films are the non-oxide-type transparent electronic material. • The plasma wavelength of hydrated magnesium-carbon films was approximate 10 μm. • Discussed the effects of the carrier concentration and mobility on the photoelectrical properties. • Studied on effects of the substrate temperature on the photoelectrical properties. [ABSTRACT FROM AUTHOR]

Abstract Transparent electronic technology has many urgent optoelectronic device applications. A key component of plasmonic materials in conventional semiconductors is the wide band gap of oxide thin films. Although transparent electronic materials have been developed for visible and near-infrared wavelengths, systems incorporating mid-infrared and far-infrared spectra are difficult to achieve. In this study, hydrated magnesium-carbon films, a new type of non-oxide transparent conductive thin films with a magnesium hydroxide structure, were generated using the three-step method. After annealing treatment, larger crystals in the thin films typically exhibited superior film resistivity, with conductivity values of approximately 8.63 × 10−3 Ω m. Due to the free electron concentration was not more than 1020 cm−3, the films demonstrated excellent optical properties, with plasma wavelength values of approximately 8 μm for infrared transmittance above 70%. After annealing, due to the Moss-Burstein (M-B) effect, the visible light transmittance was greater than 85% and the optical bandgap shifted towards the blue region. In addition, the influences of the sputtering power of the carbon target on the properties of hydrated magnesium-carbon film were also discussed in this paper. Graphical abstract Image 1 Highlights • We prepare hydrated magnesium-carbon films using the three-step method. • We analyze the effect of annealing on structural, electrical, and optical features. • Annealing leads to crystal growth, superior film resistivity, and good conductivity. • Films exhibit excellent optical properties, particularly for far-infrared ranges. • The films can replace TCO in the application of optical-electronic devices. [ABSTRACT FROM AUTHOR]

The hydrated magnesium-carbon films fabricated in this study are the novel-innovative non-oxide-type transparent electronic material. The films, which have a structure similar to that of magnesium hydroxide, were produced by making Mg x -C y films deposited by magnetron co-sputtering react with water vapor. As the extrinsic defect of hydration magnesium-carbon films, C atoms provided redundant electrons, resulting in a conductivity of approximately 3.31 × 10 −2  Ω·cm. Although the conductivity of hydrated magnesium-carbon films is not prominent comparing to the conventional and widely-used n-type TCO materials, e.g. ITO, the films also showed excellent optical properties, which can be attributed to their low bond energy, with the infrared transmittance of the films being greater than 72% for a plasma wavelength of approximately 10 μm. By varying the atomic C content of the films, a visible-region transmittance greater than 80% could be realized. The optical bandgap of the films was approximately 4.04–6.87 eV and was blue-shifted because of the Moss-Burstein effect. [ABSTRACT FROM AUTHOR]

Abstract: The effect of nickel oxide addition on the sintering behavior and electrical properties of BaZr0.1Ce0.7Y0.1Yb0.1O3−δ (BZCYYb) as an electrolyte for solid oxide fuel cells was systematically studied. Results suggest that the addition of a small amount (∼1wt%) of NiO to BZCYYb greatly promoted densification, achieving ∼96% of the theoretical density after sintering at 1350°C in air for 3h (reducing the sintering temperature by ∼200°C). Further, a sample sintered at 1450°C for 3h showed high open circuit voltages (OCVs) when used as the electrolyte membrane to separate the two electrodes under typical SOFC operating conditions, indicating that the electrical conductivity of the electrical conductivity of the BZCYYb was not adversely affected by the addition of ∼1wt% NiO. [Copyright &y& Elsevier]

The electrical characteristics (including node voltage, branch current, equivalent resistance) of a complex n -ladder network are studied by establishing recursive model with voltage parameters. On this network, not only a load is embedded on any node, but also an arbitrary right boundary resistance is contained. In this paper, the difference equation model of voltage is first established by network analysis, and then the boundary condition equation model is established according to the constraints. The general solution and solution of the difference equation are derived, and then the voltage formula of any node, branch current and equivalent resistance are obtained. The formula obtained in this paper is multifunctional and universal, and the results of many special cases are contained. The equivalent complex impedance of LC ladder network is further studied, and its irregular oscillation and resonance characteristics are revealed. [ABSTRACT FROM AUTHOR]

In this study, glass fiber (GF)/phenol formaldehyde resin (PF)/epoxy resin (EP) three-phase electrical insulating composites were fabricated by selective laser sintering (SLS) additive manufacturing technology and subsequent infiltration. In the three-phase composites, glass fibers modified by a silane coupling agent (KH-550) were used as reinforcements, phenol formaldehyde resin acted as the binder and matrix, and infiltrated epoxy resin was the filler. Mechanical and electrical properties such as tensile strength, bending strength, dielectric constant, electrical conductivity, and electric breakdown strength of the GF/PF/EP three-phase composite parts were investigated. The results indicated that after being infiltrated with EP, the bending strength and tensile strength of the GF/PF/EP composites increased by 30% and 42.8%, respectively. Moreover, the flexural strength and tensile strength of the GF/PF/EP composite increased with the increase of the glass fiber content. More importantly, the three-phase composites showed high electrical properties. Significant improvement in the dielectric constant, electric breakdown strength, and resistivity with the increase in the content of glass fiber was observed. This enables the prepared GF/PF/EP composites to form complex structural electrical insulation devices by SLS, which expands the materials and applications of additive manufacturing technology. [ABSTRACT FROM AUTHOR]

The nano-thick BaSnO 3 /Cu/BaSnO 3 multilayer structures have been designed and deposited onto glass substrates by magnetron sputtering at room temperature to develop an indium free transparent composite electrode. The effects of Cu mid–layer on structural, electrical and optical properties of BaSnO 3 /Cu/BaSnO 3 multilayer composite structures were investigated. As the Cu layer thickness increases, the resistivity decreases. The lowest resistivity value of 7.9×10 −5 Ω cm with a carrier concentration of 1.2×10 22 cm −3 was obtained in the Cu layer with optimum thickness (9 nm). The multilayer film has been optimized to obtain an average optical transmittance of ~81% in the visible range of wavelengths, while the figure of merit (FOM) reached a maximum of 14.6×10 −3 Ω −1 . [ABSTRACT FROM AUTHOR]