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In the present paper the evolution of the dislocation structure during electromigration in different regions along the Al(Cu) interconnect line is considered. It is shown that plastic deformation increases in the regions close to cathode end of the interconnect line. A coupling between the dissolution, growth and re-precipitation of Al2Cu precipitates and the electromigration-induced plastic deformation of grains in interconnects is observed. Possible mechanism of the Cu doping effect on the improved electromigration resistance of the Al(Cu) interconnects is discussed.

Electromigration during accelerated testing can induce large scale plastic deformation in Al interconnect lines as recently revealed by the white beam scanning X-ray microdiffraction. In the present paper, we provide a first quantitative analysis of the dislocation structure generated in individual micron-sized Al grains during an in-situ electromigration experiment. Laue reflections from individual interconnect grains show pronounced streaking after electric current flow. We demonstrate that the evolution of the dislocation structure during electromigration is highly inhomogeneous and results in the formation of unpaired randomly distributed dislocations as well as geometrically necessary dislocation boundaries. Approximately half of all unpaired dislocations are grouped within the walls. The misorientation created by each boundary and density of unpaired individual dislocations is determined.

Describes the three-dimensional X-ray microscopy technique using polychromatic synchrotron X-ray microbeams to probe local crystal structure. Application of the technique to single-crystal, composite and functionally graded materials; Development of X-ray microscopy technique; Extraction of complete Laue diffraction patterns by using the technique.

Abstract: X-ray microdiffraction is a non-destructive technique that allows for depth-resolved, strain measurements with submicron spatial resolution. These capabilities make this technique promising for understanding the mechanical properties of MicroElectroMechancial Systems (MEMS). This investigation examined the local strain induced by irradiating a polycrystalline diamond thin film with a dose of 2×1017 H+/cm2 protons. Preliminary results indicate that a measurable strain, on the order of 10−3, was introduced into the film near the End of Range (EOR) region of the protons. [Copyright &y& Elsevier]