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Layered material TaS2 hosts multiple structural phases and exotic correlated quantum states, including charge density wave (CDW), superconductivity, quantum spin liquid, and Mott insulating state. Here, we synthesized TaS2 monolayers in H and T phases using the molecular beam epitaxial (MBE) method and studied their electronic structures via angle-resolved photo-emission spectroscopy (ARPES). We found that the H phase TaS2 (H-TaS2) monolayer is metallic, with an energy band crossing the Fermi level. In contrast, the T phase TaS2 (T-TaS2) monolayer shows an insulated energy gap at the Fermi level, while the normal calculated band structure implies it should be metallic without any band gap. However, by considering Hubbard interaction potential U, further density functional theory (DFT) calculation suggests that monolayer T-TaS2 could be a CDW Mott insulator, and the DFT+U calculation matches well with the ARPES result. More significantly, the temperature-dependent ARPES result indicates that the CDW Mott state in the T-TaS2 monolayer is more robust than its bulk counterpart and can persist at room temperature. Our results reveal that the dimensional effect can enhance the CDW Mott state and provide valuable insights for further exploring the exotic properties of monolayer TaS2. [ABSTRACT FROM AUTHOR]

[Display omitted] The itinerant ferromagnetism can be induced by a van Hove singularity (VHS) with a divergent density of states at Fermi level. Utilizing the giant magnified dielectric constant ε r of SrTiO 3 (111) substrate with cooling, here we successfully manipulated the VHS in the epitaxial monolayer (ML) 1T-VSe 2 film approaching to Fermi level via the large interfacial charge transfer, and thus induced a two-dimensional (2D) itinerant ferromagnetic state below 3.3 K. Combining the direct characterization of the VHS structure via angle-resolved photoemission spectroscopy (ARPES), together with the theoretical analysis, we ascribe the manipulation of VHS to the physical origin of the itinerant ferromagnetic state in ML 1T-VSe 2. Therefore, we further demonstrated that the ferromagnetic state in the 2D system can be controlled through manipulating the VHS by engineering the film thickness or replacing the substrate. Our findings clearly evidence that the VHS can serve as an effective manipulating degree of freedom for the itinerant ferromagnetic state, expanding the application potentials of 2D magnets for the next-generation information technology. [ABSTRACT FROM AUTHOR]