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Laser direct writing is a widely employed technique for 3D, contactless, and fast functionalization of dielectrics. Its success mainly originates from the utilization of ultrashort laser pulses, offering an incomparable degree of control on the produced material modifications. However, challenges remain for devising an equivalent technique in crystalline silicon which is the backbone material of the semiconductor industry. The physical mechanisms inhibiting sufficient energy deposition inside silicon with femtosecond laser pulses are reviewed in this article as well as the strategies established so far for bypassing these limitations. These solutions consisting of employing longer pulses (in the picosecond and nanosecond regime), femtosecond‐pulse trains, and surface‐seeded bulk modifications have allowed addressing numerous applications. [ABSTRACT FROM AUTHOR]

We produce and characterize high-angle femtosecond Bessel beams at 1300-nm wavelength leading to nonlinearly ionized plasma micro-channels in both glass and silicon. With microjoule pulse energy, we demonstrate controlled through-modifications in 150-μm glass substrates. In silicon, strong two-photon absorption leads to larger damages at the front surface but also a clamping of the intensity inside the bulk at a level of ≈4 × 1011 W cm-2 which is below the threshold for volume and rear surface modification. We show that the intensity clamping is associated with a strong degradation of the Bessel-like profile. The observations highlight that the inherent limitation to ultrafast energy deposition inside semiconductors with Gaussian focusing [Mouskeftaras et al., Appl. Phys. Lett. 105, 191103 (2014)] applies also for high-angle Bessel beams. [ABSTRACT FROM AUTHOR]

Highlights • A laser-induced forward transfer (LIFT) strategy combining quasi-continuous (QCW) and femtosecond (fs) lasers is successfully applied for high resolution printing from a 1 µm copper donor film. • Influences of copper film temperature, and especially diameter of the melted metal area, on the printing dynamics are revealed. • By simply adjusting the synchronization between the QCW and fs pulses, droplets with different shapes are printed. The reproducibility is demonstrated by printing two-dimensional arrays. • Double-pulse LIFT prints debris-free microstructures with controllable dimensions. Abstract Laser induced forward transfer process can be implemented in a double-pulse scheme where a solid thin film deposited on a transparent donor substrate is irradiated by two synchronized lasers. In a recently demonstrated methodology, a long pulse is first applied to melt the film and an appropriately delayed ultrashort laser pulse initiates material transfer in the liquid phase toward a receiver substrate. This provides a versatile method to print high-resolution (<2 µm) patterns with a long working distance (>40 µm). In this paper we focus on the study of the dynamical aspects associated with these printing performances. The temperature evolution of the thin copper film during irradiation with a quasi-continuous wave (QCW) pulse is calculated. By combining the calculations with time-resolved imaging experiments, we reveal the influence of the copper film temperature and molten metal diameter on the ejection dynamics. Characterization of the transferred materials shows that the delay between the two laser pulses is a control parameter for the shape and volume of the printed structures. This is finally exploited to demonstrate high-precision printing of different debris-free microstructures onto a Si receiver substrate set as far as 60 µm away from the donor film. [ABSTRACT FROM AUTHOR]

There are natural limits to the spatial resolution and the deposited energy densities that can be achieved in femtosecond laser dielectric modification. These arise because of the threshold-like nature of nonlinear absorption. We use two-pulse experiments to show that both limits can be exceeded by taking advantage of absorption seeded by free electrons or self-trapped excitons, depending on the pulse separation. [ABSTRACT FROM AUTHOR]

Direct laser writing of amorphous lines in crystalline silicon has the potential for becoming a flexible alternative to silicon‐on‐insulator technology for photonic integrated circuits. Yet, the maximum amorphous layer thickness achieved is 60 nm, which is below the requirements for waveguiding at telecom wavelengths. Here, the authors report on different strategies to push the layer thickness beyond today's limit. To this end, irradiation with femtosecond laser pulses covering an extremely broad wavelength range (515 nm–4 µm) up to the yet unexplored near‐ and mid‐infrared region of silicon transparency is investigated. The results show that much thicker amorphous layers can be obtained upon multipulse irradiation at 3‐µm wavelength. The deepest amorphization is achieved in silicon wafers covered with a thick silicon dioxide layer that strongly assists the heat extraction, yielding steep index profiles with a maximum amorphous layer thickness of 128 nm. This superior thickness is compatible with single mode waveguiding for a symmetric waveguide configuration. This study also contributes to a better understanding of the mechanisms involved in laser‐induced amorphization. [ABSTRACT FROM AUTHOR]

Carrier kinetics in the density range of N = 1017 - 1020 cm-3 is investigated inside the bulk of crystalline silicon. Most conventional experimental techniques used to study carrier mobility are indirect and lack sensitivity because of charging effects and recombination on the surface. An all optical technique is used to overcome these obstacles. By focusing 1.3-µm femtosecond laser pulses in the volume, we inject an initial free-carrier population by two-photon absorption. Then, we use pump-and-probe infrared microscopy as a tool to obtain simultaneous measurements of the carrier diffusion and recombination dynamics in a microscale region deep inside the material. The rate equation model is used to simulate our experimental results. We report a constant ambipolar diffusion coefficient Da of 2:5 cm² s-1 and an effective carrier lifetime τeff of 2:5 ns at room temperature. A discussion on our findings at these high-injection levels is presented. [ABSTRACT FROM AUTHOR]

Two-photon ionization by focused femtosecond laser pulses initiates the development of micrometer-scale plasmas in the bulk of silicon. Using pump-and-probe transmission microscopy with infrared light, we investigate the space-time characteristics of these plasmas for laser intensities up to 101 2W/cm2 . The measurements reveal a self-limitation of the excitation at a maximum free-carrier density of ffi1019cm~3, which is more than one order of magnitude below the threshold for permanent modification. The plasmas remain unchanged in the --100 ps timescale revealing slow carrier kinetics. The results underline the limits in local control of silicon dielectric permittivity, which are inherent to the use of single near-infrared ultrashort Gaussian pulses. [ABSTRACT FROM AUTHOR]