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Titanium dioxide (TiO2) thin films are used for a broad range of applications such as wastewater treatment, photocatalytic degradation activity, water splitting, antibacterial and also in biomedical applications. There is a wide range of synthesis techniques for the deposition of TiO2 thin films, such as chemical vapor deposition (CVD) and physical vapor deposition (PVD), both of which are well known deposition methods. Layer by layer deposition with good homogeneity, even thickness and good adhesive nature is possible by using the PVD technique, with the products being used for photocatalytic applications. This review studies the effects of magnetron sputtering conditions on TiO2 films. This innovative technique can enhance the photocatalytic activity by increasing the thickness of the film higher than any other methods. The main purpose of this article is to review the effects of DC and RF magnetron sputtering conditions on the preparation of TiO2 thin films for photocatalysis. The characteristics of TiO2 films (i.e., structure, composition, and crystallinity) are affected significantly by the substrate type, the sputtering power, the distance between substrate and target, working pressure, argon/oxygen ratio, deposition time, substrate temperature, dopant types, and finally the annealing treatment. The photocatalytic activity and optical properties, including the degree of crystallinity, band gap (Eg), refractive index (n), transmittance (T), and extinction coefficient (k), of TiO2 films are dependent on the above- mentioned film characteristics. Optimal TiO2 films should have a small particle size, a strong degree of crystallinity, a low band gap, a low contact angle, a high refractive index, transmittance, and extinction coefficient. Finally, metallic and nonmetallic dopants can be added to enhance the photocatalytic activity of TiO2 films by narrowing the band gap. [ABSTRACT FROM AUTHOR]

Abstract: Nano-structured copper oxide thin films were deposited on glass substrates by dc reactive magnetron sputtering. The structural, morphological, electrical, and optical properties of the deposited copper oxide thin films were found to change with oxygen partial pressure. Changes in oxygen partial pressure during sputter deposition led to variations in Cu, Cu+ and Cu+2 concentrations, which resulted in corresponding changes in the electronic characteristics of sputtered semiconducting copper oxide films from initially n- to p-type and then from p-type back to n-type. These phenomena demonstrate that p-type copper oxide thin films can only be deposited by dc reactive magnetron sputtering within a narrow oxygen partial pressure range. [Copyright &y& Elsevier]

Abstract: Cuprous oxide (Cu2O) and cupric oxide (CuO) thin films were deposited on glass substrates at different oxygen partial pressures by direct-current reactive magnetron sputtering of pure copper target in a mixture of argon and oxygen gases. Oxygen partial pressure was found to be a crucial parameter in controlling the phases and, thus, the physical properties of the deposited copper oxide thin films. Single-phase Cu2O thin films with cubic structure were obtained at low oxygen partial pressure between 0.147 Pa and 0.200 Pa while higher oxygen partial pressure promoted the formation of CuO thin films with base-centered monoclinic structure. Polycrystalline Cu2O thin films deposited with oxygen partial pressure at 0.147 Pa possessed the lowest p-type resistivity of 1.76 Ω cm as well as an optical band gap of 2.01 eV. On the other hand, polycrystalline CuO thin films deposited with oxygen partial pressure at 0.320 Pa were also single phase but showed a n-type resistivity of 0.19 Ω cm along with an optical band gap of 1.58 eV. [Copyright &y& Elsevier]