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Magnetic skyrmions as swirling spin textures with a nontrivial topology have potential applications as magnetic memory and storage devices. Since the initial discovery of skyrmions in non-centrosymmetric B20 materials, the recent effort has focused on exploring room-temperature skyrmions in heavy metal and ferromagnetic heterostructures, a material platform compatible with existing spintronic manufacturing technology. Here, we report the surprising observation that a room-temperature skyrmion phase can be stabilized in an entirely different class of systems based on antiferromagnetic (AFM) metal and ferromagnetic (FM) metal IrMn/CoFeB heterostructures. There are a number of distinct advantages of exploring skyrmions in such heterostructures including zero-field stabilization, tunable antiferromagnetic order, and sizable spin-orbit torque (SOT) for energy-efficient current manipulation. Through direct spatial imaging of individual skyrmions, quantitative evaluation of the interfacial Dzyaloshinskii-Moriya interaction, and demonstration of current-driven skyrmion motion, our findings firmly establish the AFM/FM heterostructures as a promising material platform for exploring skyrmion physics and device applications. [ABSTRACT FROM AUTHOR]

The anomalous Nernst effect in a perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO thin film is measured using well-defined in-plane temperature gradients. The anomalous Nernst coefficient reaches 1.8 μV/K at room temperature, which is almost 50 times larger than that of a Ta/Co20Fe60B20/MgO thin film with perpendicular magnetic anisotropy. The anomalous Nernst and anomalous Hall results in different sample structures revealing that the large Nernst coefficient of the Ir22Mn78/Co20Fe60B20/MgO thin film is related to the interface between CoFeB and IrMn. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions are intensively explored for potential applications in ultralow-energy data storage and computing. To create practical skyrmionic memory devices, it is necessary to electrically create and manipulate these topologically protected information carriers in thin films, thus realizing both writing and addressing functions. Although room-temperature skyrmions have been previously observed, fully electrically controllable skyrmionic memory devices, integrating both of these functions, have not been developed to date. Here, we demonstrate a room-temperature skyrmion shift memory device, where individual skyrmions are controllably generated and shifted using current-induced spin-orbit torques. Particularly, it is shown that one can select the device operation mode in between (i) writing new single skyrmions or (ii) shifting existing skyrmions by controlling the magnitude and duration of current pulses. Thus, we electrically realize both writing and addressing of a stream of skyrmions in the device. This prototype demonstration brings skyrmions closer to real-world computing applications. [ABSTRACT FROM AUTHOR]

We study spin-orbit-torque (SOT)-driven magnetization switching in perpendicularly magnetized Ta/Mo/Co40Fe40B20 (CoFeB)/MgO films. The thermal tolerance of the perpendicular magnetic anisotropy (PMA) is enhanced, and the films sustain the PMA at annealing temperatures of up to 430 °C, due to the ultra-thin Mo layer inserted between the Ta and CoFeB layers. More importantly, the Mo insertion layer also allows for the transmission of the spin current generated in the Ta layer due to spin Hall effect, which generates a damping-like SOT and is able to switch the perpendicular magnetization. When the Ta layer is replaced by a Pt layer, i.e., in a Pt/Mo/CoFeB/MgO multilayer, the direction of the SOT-induced damping-like effective field becomes opposite because of the opposite sign of spin Hall angle in Pt, which indicates that the SOT-driven switching is dominated by the spin current generated in the Ta or Pt layer rather than the Mo layer. Quantitative characterization through harmonic measurements reveals that the large SOT effective field is preserved for high annealing temperatures. This work provides a route to applying SOT in devices requiring high temperature processing steps during the back-end-of-line processes. [ABSTRACT FROM AUTHOR]

In this work, we present an ingenious method to fabricate self-aligned nanoscale Hall devices using chemically synthesized nanowires as both etching and deposition masks. This versatile method can be extensively used to make nanoribbons out of arbitrary thin films without the need for extremely high alignment accuracy to define the metal contacts. The fabricated nanoribbon width scales with the mask nanowire width (diameter), and it can be easily reduced down to tens of nanometers. The self-aligned metal contacts from the sidewall extend to the top surface of the nanoribbon, and the overlap can be controlled by tuning the deposition recipe. To demonstrate the feasibility, we have fabricated Ta/CoFeB/MgO nanoribbons sputtered on a SiO2/Si substrate with different metal contacts, using synthesized SnO2 nanowires as masks. Anomalous Hall effect measurements have been carried out on the fabricated nanoscale Hall device in order to study the current-induced magnetization switching in the nanoscale heavy metal/ferromagnet heterostructure, which has shown distinct switching behaviors from micron-scale devices. The developed method provides a useful fabrication platform to probe the charge and spin transport in the nanoscale regime. [ABSTRACT FROM AUTHOR]

Magnetic skyrmions, which are topologically protected spin textures, are promising candidates for ultralow-energy and ultrahigh-density magnetic data storage and computing applications. To date, most experiments on skyrmions have been carried out at low temperatures. The choice of available materials is limited, and there is a lack of electrical means to control skyrmions in devices. In this work, we demonstrate a new method for creating a stable skyrmion bubble phase in the CoFeB-MgO material system at room temperature, by engineering the interfacial perpendicular magnetic anisotropy of the ferromagnetic layer. Importantly, we also demonstrate that artificially engineered symmetry breaking gives rise to a force acting on the skyrmions, in addition to the current-induced spin-orbit torque, which can be used to drive their motion. This room-temperature creation and manipulation of skyrmions offers new possibilities to engineer skyrmionic devices. The results bring skyrmionic memory and logic concepts closer to realization in industrially relevant and manufacturable thin film material systems. [ABSTRACT FROM AUTHOR]

We study the current-driven perpendicular magnetization switching in Ta/CoFeB(wedge)/[TaOx or MgO/TaOx] devices with a lateral structural asymmetry introduced by a varying CoFeB thickness. In these devices, an in-plane current can generate a field-like torque and its corresponding effective magnetic field (HzFL) is out-of-plane, which can deterministically switch perpendicular magnetiza-tion at zero magnetic field. Experimental results indicate that the method used for breaking lateral structural symmetry greatly affects the resulting field-like torque, and that the gradient of perpen-dicular anisotropy, resulting from the CoFeB thickness variation, is not by itself sufficient to give rise to the current-induced HzFL. Analysis of the oxidation gradient at the CoFeB/TaOx interface indicates that the oxidation gradient may play a more important role than the gradient of magnetic anisotropy for the generation of HzFL. For practical applications, the demonstration of perpendicular magnetization switching in Ta/CoFeB(wedge)/MgO/TaOx devices potentially allows for using MgO-based magnetic tunnel junctions for readout in three-terminal memory devices without the need for external magnetic fields [ABSTRACT FROM AUTHOR]

A three-dimensional singular point that consists of two oppositely aligned emergent monopoles is identified in continuous CoTb thin films, as confirmed by complementary techniques of resonant elastic x-ray scattering, Lorentz transmission electron microscopy, and scanning transmission x-ray microscopy. This new type of topological defect can be regarded as a superposition of an emergent magnetic monopole and an antimonopole, around which the source and drain of the magnetic flux overlap in space. We experimentally prove that the observed spin twist seen in Lorentz transmission electron microscopy reveals the cross section of the superimposed three-dimensional structure, providing a straightforward strategy for the observation of magnetic singularities. Such a quasiparticle provides an excellent platform for studying the rich physics of emergent electromagnetism. [ABSTRACT FROM AUTHOR]