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Abstract Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the activation of G centers in high-purity silicon substrates upon nanosecond pulsed laser annealing. The proposed method enables non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.

Abstract In several biomedical applications, the detection of biomarkers demands high sensitivity, selectivity and easy-to-use devices. Organic electrochemical transistors (OECTs) represent a promising class of devices combining a minimal invasiveness and good signal transduction. However, OECTs lack of intrinsic selectivity that should be implemented by specific approaches to make them well suitable for biomedical applications. Here, we report on a biosensor in which selectivity and a high sensitivity are achieved by interfacing, in an OECT architecture, a novel gate electrode based on aptamers, Au nanoparticles and graphene hierarchically organized to optimize the final response. The fabricated biosensor performs state of the art limit of detection monitoring biomolecules, such as thrombin-with a limit of detection in the picomolar range (≤ 5 pM) and a very good selectivity even in presence of supraphysiological concentrations of Bovine Serum Albumin (BSA-1mM). These accomplishments are the final result of the gate hierarchic structure that reduces sterich indrance that could contrast the recognition events and minimizes false positive, because of the low affinity of graphene towards the physiological environment. Since our approach can be easily applied to a large variety of different biomarkers, we envisage a relevant potential for a large series of different biomedical applications.

In this work we report on the fabrication process for the development of a flexible piezopolymeric transducer for health monitoring applications, based on lead-free, piezoelectric zinc oxide (ZnO) thin films. All the selected materials are compatible with the space environment and were deposited by the RF magnetron sputtering technique at room temperature, in view of preserving the total flexibility of the structures, which is an important requirement to guarantee coupling with cylindrical fuel tanks whose integrity we want to monitor. The overall transducer architecture was made of a c-axis-oriented ZnO thin film coupled to a pair of flexible Polyimide foils coated with gold (Au) electrodes. The fabrication process started with the deposition of the bottom electrode on Polyimide foils. The ZnO thin film and the top electrode were then deposited onto the Au/Polyimide substrates. Both the electrodes and ZnO layer were properly patterned by wet-chemical etching and optical lithography. The assembly of the final structure was then obtained by gluing the upper and lower Polyimide foils with an epoxy resin capable of guaranteeing low outgassing levels, as well as adequate thermal and electrical insulation of the transducers. The piezoelectric behavior of the prototypes was confirmed and evaluated by measuring the mechanical displacement induced from the application of an external voltage.

In-liquid biosensing is the new frontier of health and environment monitoring. A growing number of analytes and biomarkers of interest correlated to different diseases have been found, and the miniaturized devices belonging to the class of biosensors represent an accurate and cost-effective solution to obtaining their recognition. In this study, we investigate the effect of the solvent and of the substrate modification on thin films of organic semiconductor Poly(3-hexylthiophene) (P3HT) in order to improve the stability and electrical properties of an Electrolyte Gated Organic Field Effect Transistor (EGOFET) biosensor. The studied surface is the relevant interface between the P3HT and the electrolyte acting as gate dielectric for in-liquid detection of an analyte. Atomic Force Microscopy (AFM) and X-ray Photoelectron Spectroscopy (XPS) characterizations were employed to study the effect of two solvents (toluene and 1,2-dichlorobenzene) and of a commercial adhesion promoter (Ti Prime) on the morphological structure and electronic properties of P3HT film. Combining the results from these surface characterizations with electrical measurements, we investigate the changes on the EGOFET performances and stability in deionized (DI) water with an Ag/AgCl gate electrode.

Graphene and 2D materials have been exploited in a growing number of applications and the quality of the deposited layer has been found to be a critical issue for the functionality of the developed devices. Particularly, Chemical Vapor Deposition (CVD) of high quality graphene should be preserved without defects also in the subsequent processes of transferring and patterning. In this work, a lift-off assisted patterning process of Few Layer Graphene (FLG) has been developed to obtain a significant simplification of the whole transferring method and a conformal growth on micrometre size features. The process is based on the lift-off of the catalyst seed layer prior to the FLG deposition. Starting from a SiO2 finished Silicon substrate, a photolithographic step has been carried out to define the micro patterns, then an evaporation of Pt thin film on Al2O3 adhesion layer has been performed. Subsequently, the Pt/Al2O3 lift-off step has been attained using a dimethyl sulfoxide (DMSO) bath. The FLG was grown directly on the patterned Pt seed layer by Chemical Vapor Deposition (CVD). Raman spectroscopy was applied on the patterned area in order to investigate the quality of the obtained graphene. Following the novel lift-off assisted patterning technique a minimization of the de-wetting phenomenon for temperatures up to 1000 °C was achieved and micropatterns, down to 10 µm, were easily covered with a high quality FLG.