1. Improvement of memory performance of 3-D NAND flash memory with retrograde channel doping
- Author
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Deepika Gupta, Abhishek Kumar Upadhyay, Ankur Beohar, and Santosh Kumar Vishvakarma
- Subjects
3-D NAND flash memory ,Retrograde doping ,Short channel effects ,Data retention ,Electric apparatus and materials. Electric circuits. Electric networks ,TK452-454.4 ,Computer engineering. Computer hardware ,TK7885-7895 - Abstract
The examination of the effect of retrograde channel doping on reliability and performance of 3-D junction-free NAND based flash memory is done for this paper. Specifically, we study the program characteristics, data retention capability junction-free NAND flash memory with half pitch range from 35 nm to 12 nm. Based on our analysis, we highlight that the retrograde channel doping approach can improve not only the SCEs but also the program speed and data control time for 3-D junction-free NAND flash memory, without varying the oxide stack in charge trap-based flash memory.
- Published
- 2023
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