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The two-dimensional electron gas (2DEG) that forms on a semiconductor surface can be used to explore a variety of phenomena in quantum physics and plays an important role in nanoscale electronics, such as transistors. Controlling its formation is, thus, relevant. Using angle-resolved photoemission spectroscopy (ARPES) and accumulating the signal over many nanocrystals, we find that on clean InAs nanosheets with non-polar surfaces and wurtzite (WZ) crystal structures, a 2DEG can be observed at the Γ-point. We suggest that the step morphology on the WZ InAs specimens facilitates the appearance of the electron gas, since previous studies on InAs nanowire surfaces with the same crystal facet and a similar defect density did not exhibit a 2DEG. Subsequently, bismuth deposition leads to the disappearance of the 2DEG as well as a shift of the valence band. This is in contrast to previous observations on InAs surfaces, in which metal deposition would lead to the formation of a 2DEG. The control of the 2DEG with the addition of Bi atoms is relevant for applications of InAs nanosheets in quantum technologies. This study also illustrates that ARPES accumulated over several 2D materials oriented randomly around their normal axis can provide valuable information on their band structure with a fast turnover and low irradiation. [ABSTRACT FROM AUTHOR]

The development of mass spectrometric and ion mobility devices heavily depends on a comprehensive understanding of the behavior of ions within such systems. Therefore, numerical modeling of ion paths helps to optimize and verify existing devices, and contributes to the development of innovative ion optical systems and multipole geometries. This Article introduces IDSimF (Ion Dynamics Simulation Framework), an open-source simulation tool tailored to the nonrelativistic dynamics of molecular ions in mass and ion mobility spectrometry applications. Addressing limitations in existing software packages, as for example SIMION, OpenFOAM, and COMSOL, IDSimF offers a specialized platform for simulating ion trajectories in electric fields. IDSimF efficiently accounts for space charge effects and considers various ion-neutral collision models while handling chemical kinetics. The framework is highly modular with reduced user input configuration complexity and aims to support simulation efforts in development and optimization of in mass spectrometers.

Stretching or compression can induce significant energetic, geometric, and spectroscopic changes in materials. To fully exploit these effects in the design of mechano- or piezo-chromic materials, self-healing polymers, and other mechanoresponsive devices, a detailed knowledge about the distribution of mechanical strain in the material is essential. Within the past decade, Judgement of Energy DIstribution (JEDI) analysis has emerged as a useful tool for this purpose. Based on the harmonic approximation, the strain energy in each bond length, bond angle, and dihedral angle of the deformed system is calculated using quantum chemical methods. This allows the identification of the force-bearing scaffold of the system, leading to an understanding of mechanochemical processes at the most fundamental level. Here, we present a publicly available code that generalizes the JEDI analysis, which has previously only been available for isolated molecules. Now, the code has been extended to two- and three-dimensional periodic systems, supramolecular clusters, and substructures of chemical systems under various types of deformation. Due to the implementation of JEDI into the Atomic Simulation Environment, the JEDI analysis can be interfaced with a plethora of program packages that allow the calculation of electronic energies for molecular systems and systems with periodic boundary conditions. The automated generation of a color-coded three-dimensional structure via the Visual Molecular Dynamics program allows insightful visual analyses of the force-bearing scaffold of the strained system., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)

Local geometric control of basic synthesis parameters, such as elemental composition, is important for bottom-up synthesis and top-down device definition on-chip but remains a significant challenge. Here, we propose to use lithographically defined metal stacks for regulating the surface concentrations of freely diffusing synthesis elements on compound semiconductors. This is demonstrated by geometric control of Indium droplet formation on Indium Arsenide surfaces, an important consequence of incongruent evaporation. Lithographic defined Aluminium/Palladium metal patterns induce well-defined droplet-free zones during annealing up to 600 °C, while the metal patterns retain their lateral geometry. Compositional and structural analysis is performed, as well as theoretical modelling. The Pd acts as a sink for free In atoms, lowering their surface concentration locally and inhibiting droplet formation. Al acts as a diffusion barrier altering Pd's efficiency. The behaviour depends only on a few basic assumptions and should be applicable to lithography-epitaxial manufacturing processes of compound semiconductors in general., (© 2023. The Author(s).)

The chemical bonding at the interface between compound semiconductors and metals is central in determining electronic and optical properties. In this study, new opportunities for controlling this are presented for nanostructures. We investigate Bi adsorption on 2D wurtzite InAs (112̄0) nanosheets and find that temperature-controlled Bi incorporation in either anionic- or cationic-like bonding is possible in the easily accesible range between room temperature and 400 °C. This separation could not be achieved for ordinary zinc blende InAs(110) surfaces. As the crystal structures of the two surfaces have identical nearest neighbour configurations, this indicates that overall geometric differences can significantly alter the adsorption and incorporation. Ab initio theoretical modelling confirms observed adsorption results, but indicate that both the formation energies as well as kinetic barriers contributes to the observed temperature dependent behaviour. Further, we find that the Bi adsorption rate can differ by at least 2.5 times between the two InAs surfaces while being negligible for standard Si substrates under similar deposition conditions. This, in combination with the observed interface control, provides an excellent opportunity for tuneable Bi integration on 2D InAs nanostructures on standard Si substrates.

Two-dimensional (2D) topological insulators have fascinating physical properties which are promising for applications within spintronics. In order to realize spintronic devices working at room temperature, materials with a large nontrivial gap are needed. Bismuthene, a 2D layer of Bi atoms in a honeycomb structure, has recently attracted strong attention because of its record-large nontrivial gap, which is due to the strong spin-orbit coupling of Bi and the unusually strong interaction of the Bi atoms with the surface atoms of the substrate underneath. It would be a significant step forward to be able to form 2D materials with properties such as bismuthene on semiconductors such as GaAs, which has a band gap size relevant for electronics and a direct band gap for optical applications. Here, we present the successful formation of a 2D Bi honeycomb structure on GaAs, which fulfills these conditions. Bi atoms have been incorporated into a clean GaAs(111) surface, with As termination, based on Bi deposition under optimized growth conditions. Low-temperature scanning tunneling microscopy and spectroscopy (LT-STM/S) demonstrates a well-ordered large-scale honeycomb structure, consisting of Bi atoms in a √3 × √3 30° reconstruction on GaAs(111). X-ray photoelectron spectroscopy shows that the Bi atoms of the honeycomb structure only bond to the underlying As atoms. This is supported by calculations based on density functional theory that confirm the honeycomb structure with a large Bi-As binding energy and predict Bi-induced electronic bands within the GaAs band gap that open up a gap of nontrivial topological nature. STS results support the existence of Bi-induced states within the GaAs band gap. The GaAs:Bi honeycomb layer found here has a similar structure as previously published bismuthene on SiC or on Ag, though with a significantly larger lattice constant and only weak Bi-Bi bonding. It can therefore be considered as an extreme case of bismuthene, which is fundamentally interesting. Furthermore, it has the same exciting electronic properties, opening a large nontrivial gap, which is the requirement for room-temperature spintronic applications, and it is directly integrated in GaAs, a direct band gap semiconductor with a large range of (opto)electronic devices.

When calculating structural or spectroscopic properties of molecular crystals, the question arises whether it is sufficient to simulate only a single molecule or a small molecular cluster or whether the simulation of the entire crystal is indispensable. In this work we juxtapose calculations on the high-pressure structural properties of the (periodic) HCN crystal and chains of HCN molecules of finite length. We find that, in most cases, the behavior of the crystal can be reproduced by computational methods simulating only around 15 molecules. The pressure-induced lengthening of the C-H bond in HCN found in calculations on both the periodic and finite material are explained in terms of orbital interaction. Our results pave the way for a more thorough understanding of high-pressure structural properties of materials and give incentives for the design of materials that expand under pressure. In addition, they shed light on the complementarity between calculations on periodic materials and systems of finite size., (© 2022 The Authors. ChemPhysChem published by Wiley-VCH GmbH.)

This study investigates the relationship between the family's perception of the seriousness of a child's surgery and the level of family adaptability and cohesion before and after the surgical event. Research hypotheses are based on the Family Crisis and Circumplex models of marital and family systems. Forty-one families were included in the pretest/posttest single group design in which a child underwent a tonsillectomy. Study findings do not consistently support the conceptual models, and implications for the testing of middle range family theories are described.