385 results on '"Buca, D."'
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2. Advances in GeSn alloys for MIR applications
3. Nanosecond laser annealing of pseudomorphic GeSn layers: Impact of Sn content
4. Si–Ge–Sn alloys grown by chemical vapour deposition: a versatile material for photonics, electronics, and thermoelectrics
5. Biological insight into the extracellular vesicles in women with and without gestational diabetes
6. Outcome of Fetuses With Congenital Cytomegalovirus Infection and Normal Ultrasound at Diagnosis: Systematic Review and Meta-analysis
7. Oxidation-induced electron barrier enhancement at interfaces of Ge-based semiconductors (Ge, Ge1 − xSnx, SiyGe1 − x − ySnx) with Al2O3
8. Process modules for GeSn nanoelectronics with high Sn-contents
9. Determinants of emergency Cesarean delivery in pregnancies complicated by placenta previa with or without placenta accreta spectrum disorder: analysis of ADoPAD cohort.
10. Si–Ge–Sn alloys: From growth to applications
11. Diagnostic Accuracy of Magnetic Resonance Imaging in Detecting the Severity of Abnormal Invasive Placenta: A Systematic Review and Meta-Analysis
12. Demonstration of higher electron mobility in Si nanowire MOSFETs by increasing the strain beyond 1.3%
13. Investigation of blistering process in H-implanted semipolar GaN
14. Strained silicon based complementary tunnel-FETs: Steep slope switches for energy efficient electronics
15. SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications
16. Diagnostic Accuracy of Ultrasound in Detecting the Severity of Abnormally Invasive Placentation: A Systematic Review and Meta-Analysis
17. Outcome of prenatally diagnosed fetal heterotaxy: systematic review and meta‐analysis
18. First‐trimester detection of abnormally invasive placenta in high‐risk women: systematic review and meta‐analysis
19. Outcome of Cesarean scar pregnancy managed expectantly: systematic review and meta‐analysis
20. Impact of Si cap, strain and temperature on the hole mobility of (s)Si/sSiGe/(s)SOI quantum-well p-MOSFETs
21. Effect of ion beam parameters on engineering of nanoscale voids and their stability under post-growth annealing
22. Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
23. Reduction of silicon dioxide interfacial layer to 4.6 Å EOT by Al remote scavenging in high-κ/metal gate stacks on Si
24. Effects of C+ ion implantation on electrical properties of NiSiGe/SiGe contacts
25. Low temperature RPCVD epitaxial growth of Si1−xGex using Si2H6 and Ge2H6
26. Outcome of monochorionic twin pregnancy with selective intrauterine growth restriction according to umbilical artery Doppler flow pattern of smaller twin: systematic review and meta‐analysis
27. Diagnostic accuracy of ultrasound in predicting birth‐weight discordance in twin pregnancy: systematic review and meta‐analysis
28. Combining x-ray real and reciprocal space mapping techniques to explore the epitaxial growth of semiconductors.
29. Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
30. Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors
31. LaLuO3 higher-κ dielectric integration in SOI MOSFETs with a gate-first process
32. High mobility strained Si 0.5Ge 0.5/SSOI short channel field effect transistors with TiN/GdScO 3 gate stack
33. High mobility compressive strained Si 0.5Ge 0.5 quantum well p-MOSFETs with higher- k/metal-gate
34. Study of Arsenic ion implantation of patterned strained Si NWs
35. Silicon nanowire FETs with uniaxial tensile strain
36. High temperature antimony ion implantation in strained silicon-on-insulator
37. Schottky-barrier height tuning of NiGe/n-Ge contacts using As and P segregation
38. Fabrication of uniaxially strained silicon nanowires
39. sSOI fabrication by wafer bonding and layer splitting of thin SiGe virtual substrates
40. Strain relaxation of pseudomorphic Si1−xGex/Si(1 0 0) heterostructures by Si+ ion implantation
41. Growth of strained Si on He ion implanted Si/SiGe heterostructures
42. Maternal and perinatal outcomes of pregnancies complicated by poxvirus infection.
43. Reference ranges for fetal brain structures using magnetic resonance imaging: systematic review.
44. Formation of ternary Ni-silicide on relaxed and strained SiGe layers
45. An In-Depth Study of the Boron and Phosphorous Doping of GeSn.
46. MBE grown Si/SiGe undulating layer superlattices for infrared light detection
47. Fast IR Si/SiGe superlattice MSM photodetectors with buried CoSi 2 contacts
48. MBE-growth of a Ge–CoSi 2–Si heterostructure for vertical metal–semiconductor–metal photodetectors
49. The use of ion implantation and annealing for the fabrication of strained silicon on thin SiGe virtual substrates
50. Tunable coupling of two mechanical resonators by a graphene membrane.
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