Search

This paper reports the optimization of voltage controlled resistive switching devices in terms of device and circuit level parameters in a memristor-based circuit in order to demonstrate profound non-linear characteristics for high performance NVM applications. The pinched hysteresis loop has been correlated to the different stages of formation and rupture of conductive filaments in memristors. A qualitative study of the VTEAM model has also been presented. The memristor circuit has been simulated for varying device and circuit level parameters and options to optimize the circuit to achieve high degree of power-aware non-linearity in the characteristics of the memristor have been demonstrated in this paper. The effect of window functions on the non-linear behavior of memristors has been presented towards the end of the paper. [ABSTRACT FROM AUTHOR]

This paper reports the first principle simulations of Fe/MgO/Fe, Fe/Y2O3/Fe, Fe/HfO 2/Fe, and Fe/Al2O3/Fe magnetic tunnel junctions (MTJs). From the device-level and circuit-level simulations carried out in this paper, the Fe/MgO/Fe configuration has been found to be the best. From the device-level simulations, all the four configurations of MTJs have been compared with regards to the bias dependence of tunnel magnetoresistance ratios (TMRs), insulator thickness dependence of TMR, and insulator thickness dependence of parallel and antiparallel state resistances. Finally, from the circuit-level simulations, the static and switching power dissipations have been computed along with the delay time estimation. [ABSTRACT FROM PUBLISHER]