1. Sensitivity and 3 dB Bandwidth in Single and Series-Connected Tunneling Magnetoresistive Sensors.
- Author
-
Dąbek, Michał, Wiśniowski, Piotr, Stobiecki, Tomasz, Wrona, Jerzy, Cardoso, Susana, and Freitas, Paulo P.
- Subjects
- *
BANDWIDTHS , *MAGNETORESISTIVE devices , *BREAKDOWN voltage , *SENSITIVITY analysis , *MAGNETIC devices - Abstract
As single tunneling magnetoresistive (TMR) sensor performance in modern high-speed applications is limited by breakdown voltage and saturation of the sensitivity, for higher voltage applications (i.e., compatible to 1.8 V, 3.3 V or 5 V standards) practically only a series connection can be applied. Thus, in this study we focused on sensitivity, 3 dB bandwidth and sensitivity-bandwidth product (SBP) dependence on the DC bias voltage in single and series-connected TMR sensors. We show that, below breakdown voltage, the strong bias influence on sensitivity and the 3 dB frequency of a single sensor results in higher SBP than in a series connection. However, the sensitivity saturation limits the single sensor SBP which, under 1 V, reaches the same level of 2000 MHz·V/T as in a series connection. Above the single sensor breakdown voltage, linear sensitivity dependence on the bias and the constant 3 dB bandwidth of the series connection enable increasing its SBP up to nearly 10,000 MHz·V/T under 5 V. Thus, although by tuning bias voltage it is possible to control the sensitivity-bandwidth product, the choice between the single TMR sensor and the series connection is crucial for the optimal performance in the high frequency range. [ABSTRACT FROM AUTHOR]
- Published
- 2016
- Full Text
- View/download PDF