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Abstract Silicon carbide (SiC) wafers have attracted attention as a material for advanced power semiconductor device applications due to their high bandgap and stability at high temperatures and voltages. However, the inherent chemical and mechanical stability of SiC poses significant challenges in the chemical mechanical planarization (CMP) process, an essential step in reducing defects and improving surface flatness. SiC exhibits different mechanical and chemical properties depending on SiC terminal faces, affecting SiC oxidation behavior during the CMP process. Here, we investigate the process of oxide layer formation during the CMP process and how it relates to the SiC terminal faces. The results show that under the same conditions, the C-terminated face (C-face) exhibits higher oxidation reaction kinetics than the Si-terminated face (Si-face), forming an oxide layer of finer particles. Due to the different oxidation kinetic tendencies, the oxide layer formed on the C-face has a higher friction coefficient and more defects than the oxide layer formed on the Si-face. This results in a higher removal rate during CMP for the C-face than the Si-face. Furthermore, by controlling the physicochemical properties of the oxide film, high removal rates can be achieved by friction with the pad alone, without the need for nanoparticle abrasives.

Zinc (Zn)‐based aqueous battery‐supercapacitor hybrid (BSH) devices are considered promising energy storage devices benefiting from their high energy and power densities, low‐cost, safety, and environmental benignity. However, challenges remain in the development of efficient BSH electrodes due to poor reversibility in battery electrodes and lack of efficient supercapacitor electrodes to solve the problems of low power and energy densities. Herein, the loading of iodine (I2) in the nanopores of 3D graphene‐like carbon (3DGC) for the fabrication of BSH electrodes and their device application with Zn are reported. The uniform micropores of 3DGC serve as nanocages to stabilize I2, the high surface area of 3DGC maximizes the dispersion, and the high conductivity of 3DGC provides a path for fast electron transfer. The resultant I2‐loaded 3DGC (I2/3DGC) is applied to evaluate Zn‐based battery and BSH performance. The I2/3DGC‐based electrode exhibits excellent performance with ultrahigh energy and power densities resulting from the high reversibility of I2 and supercapacitance of 3DGC. The device exhibits high cyclic stability in both battery and supercapacitor modes due to the confinement of I2 in the micropores. It is demonstrated that this combination of 3DGC with I2 provides an easy way to fabricate durable and economical BSH electrodes.