Search

We have demonstrated a monolithic semiconductor passively mode-locked Bragg waveguide laser (PMBRL) based on a two quantum well active region. The lasers showed a threshold current of ~33 mA at a saturable absorber reverse bias of 0 V in continuous wave operation (CW), with emission wavelength of ~785 nm. A systematic study of a two section PMBRLs showed that these devices can generate pulse widths down to 211 fs at a 64 GHz repetition rate with a time-bandwidth product of 0.32. This range of pulse widths sets a new record for quantum well based devices. [ABSTRACT FROM AUTHOR]

Optical frequency conversion in chip-scale devices enables crucial applications in myriad fields, such as optical communication, spectroscopy, and sensing. With large nonlinearities and the possibility of monolithic pump laser integration coexisting within the same platform, compound semiconductor is a choice of material superior to many others. In this work, we demonstrate an intracavity difference frequency generation, electrically pumped diode lasers with external input signal beam. Thanks to exact phase matching and large bulk nonlinearity in the laser structures reported, there is a normalized internal conversion efficiency of 169% W−1 cm−2. We also demonstrate a broad tuning range between 1486 nm and 1686 nm, or 24 THz, which spans the S-C-L-U telecommunications bands. [ABSTRACT FROM AUTHOR]

This Letter presents, to the best of our knowledge, the first report of a narrow-linewidth ∼790-800 n m edge-emitting semiconductor distributed feedback Bragg reflection waveguide diode laser ( D F B 2 R L ). The D F B 2 R L s were fabricated using a ridge waveguide structure with 5th order, surface-etched grating forming the wavelength selective element. Unbonded devices with a 500 µm cavity length exhibited continuous wave threshold currents in the region of 25 mA with an output power of 2.5 mW per (uncoated) facet at 100 mA drive current. The devices operated in a single longitudinal mode, with side-mode suppression ratio (SMSR) as high as 49 dB and linewidths as low as 207 kHz. Devices maintained single mode operation with high SMSR over a 9 nm wavelength range as the temperature was swept from 15°C to 50°C.