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Wearable assistant devices play an important role in daily life for people with disabilities. Those who have hearing impairments may face dangers while walking or driving on the road. The major danger is their inability to hear warning sounds from cars or ambulances. Thus, the aim of this study is to develop a wearable assistant device with edge computing, allowing the hearing impaired to recognize the warning sounds from vehicles on the road. An EfficientNet-based, fuzzy rank-based ensemble model was proposed to classify seven audio sounds, and it was embedded in an Arduino Nano 33 BLE Sense development board. The audio files were obtained from the CREMA-D dataset and the Large-Scale Audio dataset of emergency vehicle sirens on the road, with a total number of 8756 files. The seven audio sounds included four vocalizations and three sirens. The audio signal was converted into a spectrogram by using the short-time Fourier transform for feature extraction. When one of the three sirens was detected, the wearable assistant device presented alarms by vibrating and displaying messages on the OLED panel. The performances of the EfficientNet-based, fuzzy rank-based ensemble model in offline computing achieved an accuracy of 97.1%, precision of 97.79%, sensitivity of 96.8%, and specificity of 97.04%. In edge computing, the results comprised an accuracy of 95.2%, precision of 93.2%, sensitivity of 95.3%, and specificity of 95.1%. Thus, the proposed wearable assistant device has the potential benefit of helping the hearing impaired to avoid traffic accidents. [ABSTRACT FROM AUTHOR]

This research explores the relationships between self-directed learning readiness and transformative learning theory (TLT) reflected by the Constructivist Internet-based Learning Environment Scale (CILES). A questionnaire survey about adult learner's perceptions of Internet-based learning was administered to adults enrolled in classes in community colleges in Taiwan. A total of 593 valid questionnaires were used for the structural equation modeling analysis. The findings confirmed a second-order hierarchical factor relationship of TLT (technical, dialectical and emancipatory learning interests) from CILES. Moreover, the three domains of learning interests of transformative learning were proved to have a developmental relationship, moderated by the readiness of self-directed learning for adult learners in Internet-based learning.

Threshold logic has been attracting great attention from researchers due to the rapid development in nanotechnology-based devices. In the state-of-the-art approach to the threshold logic network (TLN) synthesis using don’t cares, we observed that not all the computed don’t cares contribute to the cost minimization of threshold logic gate (TLG). Therefore, in this work, we focus on computing the don’t cares that effectively provide the opportunities for cost minimization. Furthermore, De Morgan’s law for TLGs is applied such that global TLN optimization considering the cost and the number of inverters can be achieved. The experimental results show that the proposed approach is capable of obtaining efficiently a smaller cost and fewer inverters for a set of TLN benchmarks. [ABSTRACT FROM AUTHOR]

Motion estimation (ME) in high-definition H.264 video coding presents a significant design challenge for memory bandwidth, latency, and cost because of its large search range and various modes. To conquer this problem, this paper presents a low-latency and hardware-efficient ME design with three design techniques. The first technique on integer-pel ME (IME) adopts parallel instead of serial multiresolution search so that we can process 1080 p @ 60 fps videos with [+ or -] 128 search range within just 256 cycles, 5.95-KB buffers, and 213.7K gates. The second technique on fractional-pel ME (FME) uses a single-iteration six-point search to reduce the cycle count by half with similar gate count and negligible quality loss. The third technique applies a mode-filtering approach to further reduce the bandwidth and cycles and share the buffer of IME and FME. The final ME implementation with 0.13-[micro]m process can support processing of 1080 p @ 60 fps with just 128.8 MHz, 282.6 K gates, and 8.54-KB buffer, which saves 60% gate count, and 68.9% SRAM buffers when compared with the previous design. Index Terms--Digital circuits, high-definition television (HDTV), H.264, motion estimation (ME), video coding, video signal processing.

Quantum-dot cellular automata (QCA) is considered as a promising emerging technology due to its low power dissipation and high device density. Since the majority function is the main operation in QCA circuits, minimizing the number of majority gates in QCA circuits is crucial to the corresponding QCA circuit minimization. A previous work used the node-merging technique to replace one target node with an existing substitute node in majority circuits for optimization. However, this technique may fail when no substitute nodes exist for a target node. In this article, we propose an enhanced optimization technique for majority circuits by adding a new node into the circuits and removing the target node and its fanin nodes. The experimental results show that this technique improves the results of the node-merging technique on a set of EPFL logic synthesis benchmarks. Additionally, this enhanced technique can work together with other optimization techniques. The circuit size reduction in the integrated approach reaches 1.26 times as compared to the results using the node-merging technique. [ABSTRACT FROM AUTHOR]

LOOPLock is the state-of-the-art cyclic logic locking method in hardware security. LOOPLock is able to invalidate SAT Attack, Removal Attack, and CycSAT simultaneously by introducing two types of cycle pairs in a circuit. In this work, we analyze LOOPLock’s locking mechanism and propose an attacking approach based on locking structure analysis. Furthermore, to defend the new attack, we propose LOOPLock 2.0, which strengthens the original cyclic logic locking method—LOOPLock. Experimental results show the efficiency and effectiveness of the proposed attacking approach to LOOPLock and the high defense capability of LOOPLock 2.0. [ABSTRACT FROM AUTHOR]

Novel earth‐abundant metal sulfate‐containing high entropy sulfides, FeNiCoCrXS2 (where X = Mn, Cu, Zn, or Al), are synthesized via a two‐step solvothermal method. It is shown that sulfate‐containing FeNiCoCrMnS2 exhibits superior oxygen evolution reaction (OER) activity with an exceptionally low overpotential of 199, 246, 285, and 308 mV at current densities of 10, 100, 500, and 1000 mA cm–2, respectively, and surpassing its unary‐, binary‐, ternary‐, and quaternary‐metal counterparts. The electrocatalyst yields exceptional stability after 12 000 cycles and 55 h of durability even at a high current density of 500 mA cm–2. Various in situ and ex situ analyses are used to investigate the self‐reconstruction of the sulfides during the OER for the first time. The resulting metal (oxy)hydroxide is believed to be the true active center for OER. The remaining sulfate also contributes to the catalytic activity. Density function theory calculation is in good agreement with the experimental result. The extraordinary OER performance of the high entropy sulfide brings a great opportunity for desirable catalyst design for practical applications. [ABSTRACT FROM AUTHOR]

A new type of lanthanum‐based high entropy perovskite oxide (HEPO) electrocatalyst for the oxygen evolution reaction is reported. The B‐site lattices in the HEPO consist of five consecutive first‐row transition metals, including Cr, Mn, Fe, Co, and Ni. Equimolar and five non‐equimolar HEPO electrocatalysts are studied for their OER electrocatalytic performance. In the five non‐equimolar HEPOs, the concentration of one of the five transition metals is doubled in individual samples. The performances of all the HEPOs outperform the single perovskite oxides. The optimized La(CrMnFeCo2Ni)O3 HEPO exhibits an outstanding OER overpotential of 325 mV at a current density of 10 mA cm−2 and excellent electrochemical stability after 50 h of testing. [ABSTRACT FROM AUTHOR]

The magnetotransport properties of a hybrid InSe/monolayer graphene in a SiC system are systematically studied. Compared to those of its bare graphene counterpart, in InSe/graphene, we can effectively modify the carrier density, mobility, effective mass, and electron–electron (e–e) interactions enhanced by weak disorder. We show that in bare graphene and hybrid InSe/graphene systems, the logarithmic temperature (lnT) dependence of the Hall slope RH = δRxy/δB = δρxy/δB can be used to probe e–e interaction effects at various temperatures even when the measured resistivity does not show a lnT dependence due to strong electron–phonon scattering. Nevertheless, one needs to be certain that the change of RH is not caused by an increase of the carrier density by checking the magnetic field position of the longitudinal resistivity minimum at different temperatures. Given the current challenges in gating graphene on SiC with a suitable dielectric layer, our results suggest that capping a van der Waals material on graphene is an effective way to modify the electronic properties of monolayer graphene on SiC. [ABSTRACT FROM AUTHOR]

Herein, a new high entropy material is reported, i.e., a noble metal‐free high entropy glycerate (HEG), synthesized via a simple solvothermal process. The HEG consists of 5 different metals of Fe, Ni, Co, Cr, and Mn. The unique glycerate structure exhibits an excellent oxygen evolution reaction (OER) activity with a low overpotential of 229 and 278 mV at current densities of 10 and 100 mA cm−2, respectively, in 1 m KOH electrolyte, outperforming its subsystems of binary‐, ternary‐, and quaternary‐metal glycerates. The HEG also shows outstanding stability and durability in the alkaline electrolyte. The result demonstrates the significance of synergistic effect that gives additional freedoms to modify the electronic structure and coordination environment. Moreover, HEG@HEG electrolyzer shows a good overall water splitting performance and durability, requiring a cell voltage of 1.63 V to achieve a current density of 10 mA cm−2. [ABSTRACT FROM AUTHOR]

This article proposes a new necessary condition and the corresponding speedup strategies to the threshold function (TF) identification problem. The state-of-the-art to this identification problem could be very time-consuming when the function-under-identification is a non-TF with the unateness property. The proposed new necessary condition can be seamlessly integrated into this identification algorithm. As compared with the state-of-the-art, the improved identification algorithm with the proposed necessary condition can more effectively and efficiently detect non-TFs. Furthermore, according to the experimental results, the ratio of CPU time overhead in the process of checking the proposed necessary condition for identifying all the 8-input TF is only 0.1%. [ABSTRACT FROM AUTHOR]

SAT Attack, CycSAT, and Removal Attack have demonstrated their abilities to break most existing logic locking methods. In this article, we propose a new cyclic logic locking method to invalidate these attacks simultaneously. Our main intention is to create noncombinational cycles to lock a circuit. Specifically, the noncombinational behavior in the noncombinational cycles that is unobservable at the primary outputs (POs) needs to be preserved when the correct key-vector is fed to resist CycSAT, and the noncombinational behavior in the noncombinational cycles affecting POs needs to be preserved when the incorrect key-vector is fed to invalidate SAT Attack. Furthermore, some nodes will be removed when applying our locking method, which is able to defend Removal Attack. The experimental results show the effectiveness and low area overhead of the proposed method. [ABSTRACT FROM AUTHOR]

The identification of threshold function (TF), which determines whether a Boolean function can be represented by an linear threshold logic gate (LTG) or not, is a fundamental but important task in the theories of threshold logic. In this paper, we propose a more efficient and effective algorithm of TF identification by constructing the system of irredundant inequalities and adjusting the weight assignment comprehensively. This is the first non-ILP-based approach that is able to identify all the eight-input TFs. The experimental results demonstrated that the proposed approach is more effective than all the existing non-ILP-based approaches and the LTGs obtained by the proposed approach are optimal for near 100% cases. For TFs with 9–15 inputs, the proposed approach can identify 100 000 randomly generated TFs as well in a reasonable CPU time. [ABSTRACT FROM AUTHOR]

Abstract Growth control of cubic perovskite structure strontium titanate (SrTiO 3) thin films was facilely achieved by tailoring surface morphologies of the TiN seeding layer in the hydrothermal-galvanic couple (HT-GC) synthesis. Two types of TiN thin films with pyramidal (P-TiN) and granular (G-TiN) surface morphologies were deposited on Si substrates by sputtering. The TiN-coated Si working electrodes were then directly connected to the Pt counter electrode without applying any external power source and soaked in 0.1 M Sr(CH 3 COOH) 2 mixed with 2 M NaOH at 80 °C for 1–60 min. Significant galvanic currents were detected during the HT-GC synthesis. Directional oriented cubic SrTiO 3 thin films grew over the two types of highly preferred oriented TiN seeding layers. The growth kinetics of SrTiO 3 was deduced by fitting the coverage of the oxide over the two types of TiN at different reaction times to a modified Avrami equation. It was shown that galvanic currents, relative peak integrated intensities, and growth rates of SrTiO 3 over the P-TiN were much higher than those on the G-TiN, while the grain sizes of SrTiO 3 over the P-TiN were smaller. The faceted surfaces with fewer phase boundaries for P-TiN could yield a different rate-limiting step during the HT-GC synthesis and enhance significantly the growth of the oxide. This facile growth control could also be applied to similar perovskite oxide/conductive nitride systems. Highlights • SrTiO 3 was made on TiN-coated electrodes by the hydrothermal-galvanic couple method. • Directionally oriented SrTiO 3 thin films grew over highly preferred oriented TiN. • Growth kinetics of SrTiO 3 films was governed by tailoring surface morphology of TiN. • Different morphologies of TiN yield different growth rates and gain sizes of SrTiO 3. [ABSTRACT FROM AUTHOR]

Memristor, which is a two-terminal nanodevice, widely used in various fields, e.g., machine learning and neuromorphic systems, has attracted much attention these years. Memristor can also be used to realize an implication logic gate and thus logic circuits. However, the fanouts in a memristor-based logic circuit have some constraints and need to be processed with special care. On the other hand, in addition to the number of memristors, the number of operational pulses is another metric to measure the quality of a memristor-based logic circuit. Hence, in this paper, we propose a synthesis algorithm to deal with the fanout problems in memristor-based logic circuits using implication logic gates for having a minimal number of operational pulses. We conducted experiments on a set of MCNC benchmarks. The experimental results show that the proposed algorithm can reduce 29% operational pulses and 36% memristor count on average compared with the state-of-the-art. [ABSTRACT FROM AUTHOR]

Water availability, resulting from either a lack of water or poor water quality is a key factor contributing to regional water stress. This study proposes a set of sector-wise characterization factors (CFs), namely consumptive and degradative water stresses, to assess the impact of water withdrawals with a life cycle assessment approach. These CFs consider water availability, water quality, and competition for water between domestic, agricultural and industrial sectors and ecosystem at the watershed level. CFs were applied to a case study of regional water management of industrial water withdrawals in Taiwan to show that both regional or seasonal decrease in water availability contributes to a high consumptive water stress, whereas water scarcity due to degraded water quality not meeting sector standards has little influence on increased degradative water stress. Degradative water stress was observed more in the agricultural sector than in the industrial sector, which implies that the agriculture sector may have water quality concerns. Reducing water intensity and alleviating regional scale water stresses of watersheds are suggested as approaches to decrease the impact of both consumptive and degradative water use. The results from this study may enable a more detailed sector-wise analysis of water stress and influence water resource management policies. [ABSTRACT FROM AUTHOR]

Efficient processing of skyline queries with partially ordered domains has been intensively addressed in recent years. To further reduce the query processing time to support high-responsive applications, the skyline queries that were previously processed with user preferences similar to those of the new query contribute useful candidate result points. Hence, the answered queries can be cached with both their results and the user preferences such that the query processor can rapidly retrieve the result for a new query only from the result sets of cached queries with compatible user preferences. When caching a significant number of queries accumulated over time, it is essential to adopt effective access methods to index the cached queries to retrieve a set of relevant cached queries for facilitating the cache-based skyline query computations. In this paper, we propose an extended depth-first search indexing method (e-DFS for short) for accessing user preference profiles represented by directed acyclic graphs (DAGs), and emphasize the design of the e-DFS encoding that effectively encodes a user preference profile into a low-dimensional feature point which is eventually indexed by an R-tree. We obtain one or more traversal orders for each node in a DAG by traversing it through a modified version of the depth-first search which is utilized to examine the topology structure and dominance relations to measure closeness or similarity. As a result, e-DFS which combines the criteria of similarity evaluation is able to greatly reduce the search space by filtering out most of the irrelevant cached queries such that the query processor can avoid accessing the entire data set to compute the query results. Extensive experiments are presented to demonstrate the performance and utility of our indexing method, which outperforms the baseline planning techniques by reducing 37 percent of the computational time on average. [ABSTRACT FROM AUTHOR]

Quantum circuits consist of a cascade of quantum gates. In a physical design-unaware quantum logic circuit, a gate is assumed to operate on an arbitrary set of quantum bits (qubits), without considering the physical location of the qubits. However, in reality, physical qubits have to be placed on a grid. Each node of the grid represents a qubit. The grid implements the architecture of the quantum computer. A physical constraint often imposed is that quantum gates can only operate on adjacent qubits on the grid. Hence, a communication channel needs to be built if the qubits in the logical circuit are not adjacent. In this paper, we introduce a tool called the physical design-aware fault-tolerant quantum circuit synthesis (PAQCS). It contains two algorithms: one for physical qubit placement and another for routing of communications. With the help of these two algorithms, the overhead of converting a logical to a physical circuit is reduced by 30.1%, on an average, relative to previous work. The optimization algorithms in PAQCS are evaluated on circuits implemented using quantum operations supported by two different quantum physical machine descriptions and three quantum error-correcting codes. They reduce the number of primitive operations by 11.5%–68.6%, and the number of execution cycles by 16.9%–59.4%. [ABSTRACT FROM AUTHOR]

A simplified one-diode one-resistor (1D1R) resistive switching memory cell that uses only four layers of TaN/ZrTiO/Ni/n-Si was proposed to suppress sneak current where TaN/ZrTiO/Ni can be regarded as a resistive-switching random access memory (RRAM) device while Ni/n-Si acts as an Schottky diode. This is the first RRAM cell structure that employs metal/semiconductor Schottky diode for current rectifying. The 1D1R cell exhibits bipolar switching behavior with SET/RESET voltage close to 1 V without requiring a forming process. More importantly, the cell shows tight resistance distribution for different states, significantly rectifying characteristics with forward/reverse current ratio higher than 10 and a resistance ratio larger than 10 between two states. Furthermore, the cell also displays desirable reliability performance in terms of long data retention time of up to 10 s and robust endurance of 10 cycles. Based on the promising characteristics, the four-layer 1D1R structure holds the great potential for next-generation nonvolatile memory technology. [ABSTRACT FROM AUTHOR]

Diffusion of deuterated polystyrene(dPS) is probed in PS matricescontaining stringlike chained nanoparticles (cNP) grafted with PS.This investigation connects prior diffusion studies in model sphericaland cylindrical NP systems and provides insight for technologicalapplications, which typically involve irregularly shaped NPs suchas carbon black. We report that the presence of chained NPs in PSmatrices induces a minimum in the diffusion coefficient (D) with increasing cNP concentration when the key length scale, 2Rg/L≤ 1.5, where Rgis the gyration radius of dPS and Lis the mean length of the impenetrable core of the chainedNPs. When 2Rg/L>1.5, Ddecreases monotonically as the NP concentrationincreases.Note that in all cases 2Rgis larger thanthe diameter of these short-stringy NPs. The diffusion minimum isattributed to anisotropic diffusion in the vicinity of the chainedNPs and requires that the long dimension of the cNP be comparableto or longer than the tracer molecule. Two normalizations are exploredto provide insight about the diffusion mechanism: D/D0where D0is the diffusion coefficient in a pure homopolymer matrix and D/Dewhere Deis an effective diffusion coefficient that accountsfor the distinct dynamics in the PS matrix and PS brush regions. For D/D0, a sharp transition froma diffusion minimum to a monotonic decrease is observed as dPS molecularweight increases, while for D/Dethe transition is more gradual. These studies show not onlythat the NPs act as impenetrable obstacles for polymer diffusion butthat the polymer brush grafted to the cNP provides an alternativepathway to control polymer dynamics. [ABSTRACT FROM AUTHOR]

ZrTiOx-based metal–insulator–metal (MIM) devices with both-sided, one-sided, and without interfacial layer (IL) were fabricated by employing Ni or TaN as the electrodes to investigate the impact of presence and position of IL on the resistive switching behaviors. The IL plays a critical role in determining the magnitude of SET and RESET voltage since the oxygen vacancies and trapped electrons in the IL modulate the effective electric field in the ZrTiOx. With Ni and TaN as the top and bottom electrode, respectively, devices demonstrate self-compliance and bipolar switching behavior without requiring a forming step. The devices also exhibit great potential for next-generation nonvolatile memory applications because of the promising characteristics such as low dc SET/RESET voltage of 0.9/−0.6 V, tight distribution of device parameters, high switching speed of 200 ns with ±1.3 V, a large memory window of 6000 times, robust endurance up to 106 cycles, and good retention. [ABSTRACT FROM PUBLISHER]

Quantum computation can solve certain problems much faster than classical computation. However, quantum computations are more susceptible to errors than conventional digital computations. Thus, a fault-tolerant (FT) quantum circuit design is required for a practical implementation. Quantum circuits consist of a cascade of quantum gates. These gates are themselves realized using primitive quantum operations that are supported by the quantum physical machine description (PMD). As different quantum systems are associated with different Hamiltonians, they have different PMDs. In addition, the quantum cost for implementing a quantum operation may differ from one PMD to another. Thus, a quantum logic circuit needs to be realized with and optimized for the set of primitive quantum operations supported by the given PMD. In this paper, an FT quantum logic synthesis (FTQLS) methodology and tool is described for six different PMDs. A methodology, such as this, which can be targeted at multiple PMDs, has not been attempted before, to the best of our knowledge. The input to FTQLS is an unoptimized quantum circuit realized using a set of commonly used gates and its output is an optimized FT quantum circuit that only comprises of primitive quantum operations supported by the given PMD. FTQLS does technology mapping for different PMDs and then converts non-FT circuits to FT circuits. For technology mapping, it utilizes an optimized quantum gate library targeted at various PMDs that decomposes gates into primitive operations. Efficient conversion to FT circuits is done by integrating two quantum compilers and an FT cache table into FTQLS. For improving the synthesis results, an FT set of gates that is directly supported by each PMD is proposed. Quantum circuit optimization is done by utilizing quantum identity rules. The performance of FTQLS is evaluated using two cost metrics: number of primitive operations (#ops) and execution cycles on the critical path (#cycles). Experiment results show that the decrease in #ops varies between 58.1% and 87.0% and in #cycles between 42.8% and 76.4%, on an average, depending on the PMD. [ABSTRACT FROM AUTHOR]

Highlights: [•] Orthorhombic ZrTiO4 and amorphous Yb2O3 were confirmed by XRD and TEM. [•] Gate stack of ZrTiO4/Yb2O3 shows low D it and a small fixed oxide charge density. [•] MOSFETs with 0.79-nm EOT and excellent sub-Vt swing of 66mV/dec were realized. [•] Good reliability is proven by negligible ΔVt, Δgm and sub-Vt swing degradation. [Copyright &y& Elsevier]

An amorphous Yb2O3 passivation layer integrated with a crystalline ZrTiO4 film was explored as the advanced gate stack for Ge MOS devices. The ZrTiO 4/Yb2O 3 gate stack demonstrates Dit of 2.4 × 10^11 cm ^-2\cdot\, eV^-1 and EOT down to 0.76 nm which are, respectively, due to the formation of an interfacial YbGeO x layer that well passivates the dangling bonds at Ge surface and the adoption of a crystalline ZrTiO4 film with a κ value of 45.6. The gate stack also shows low leakage current, tight distribution of device parameters, and desirable reliability performance, paving an alternative avenue to develop high-performance Ge MOS devices. [ABSTRACT FROM PUBLISHER]