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A study was conducted on the effect of polyiodide solution treatment on WSe2-based Schottky junctions. Iodine species were found to exist at lower depths in the WSe2. A passivation mechanism was also observed wherein the iodine species simultaneously attack the deposited metal and effectively remove the metal/defect-semiconductor junctions in the process. Results also show that polyiodide treatment neutralizes the effect of defect step sites.

Presents a study which analyzed the effect of oxygen photodissociation upon oxide growth kinetics in ultraviolet laser-induced oxidation of silicon. Details on the experiment; Results of the study; Conclusions.

Photoelectrons with excess kinetic energy corresponding to several absorbed photons above the work function have been measured from atomically clean Cu(110) and Cu(100) surfaces under ultrahigh vacuum conditions. The power dependence of the photoemission yield does not follow a simple power law dependence corresponding to the number of photons absorbed. This behavior is reminiscent of other above threshold ionization (ATI) or tunnel ionization (TI) processes observed for atoms in the gas phase. The photoelectrons are generated with laser pulsewidths less than 100 fs in duration and peak powers as low as 100 MW/cm2. These intensities are on the order of 105 times lower than that required to observe similar phenomena in the gas phase. The relatively low intensities and correlation with surface roughness suggests a contribution from a surface enhancement mechanism. Thermal heating and space charge effects have been ruled out, and the possibility of electric field enhancement at the surface due to the coupling of photons into surface plasmons is discussed. The nonlinear yield and enhancement of the photoemission produced by short pulse excitation needs to be considered when discussing photoinduced hot electron reaction channels at metal surfaces. © 1995 American Institute of Physics. [ABSTRACT FROM AUTHOR]

The internal and translational energy distributions of nitric oxide, which was desorbed from a cold polycrystalline platinum foil by laser-induced thermal desorption, were measured using a laser-excited fluorescence, time-of-flight technique. Under irradiation conditions which are estimated to produce a maximum surface temperature of 320 K, desorbed NO in quantum states with 25/2k which continuously increased from 1400 to 2650 K with increasing ER, a rotational temperature of TR=410 K, and a vibrational temperature of TVapprox. 900 K; and a slower component with /2k=300 K and TR=170 K. [ABSTRACT FROM AUTHOR]

Photochemical activation of a silicon native oxide surface with triisobutylaluminum (TIBA) and subsequent patterned metalorganic chemical vapor deposition (MOCVD) is observed in situ with x-ray photoelectron spectroscopy. At room temperature and in the presence of a low vapor pressure (10-7 Torr) of TIBA, an ArF excimer laser is used to photodissociate the metalorganic adsorbed on the surface. The deposit forms islands consisting of oxygen, carbon, and aluminum. The oxygen is included by the reduction of the native oxide surface and the aluminum by the photodissociation of the TIBA. When the surface is heated to 300 °C (with the laser off), this deposit nucleates MOCVD film growth. The unprocessed native oxide surface does not nucleate growth so the deposit grows in the pattern initially written with the laser. The source of the prenucleation barrier that inhibits growth on the native oxide is discussed. [ABSTRACT FROM AUTHOR]