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Abstract The occurrence of whole-genome duplication or polyploidy may promote plant adaptability to harsh environments. Here, we clarify the evolutionary relationship of eight GhCIPK6 homologous genes in upland cotton (Gossypium hirsutum). Gene expression and interaction analyses indicate that GhCIPK6 homologous genes show significant functional changes after polyploidy. Among these, GhCIPK6D1 and GhCIPK6D3 are significantly up-regulated by drought stress. Functional studies reveal that high GhCIPK6D1 expression promotes cotton drought sensitivity, while GhCIPK6D3 expression promotes drought tolerance, indicating clear functional differentiation. Genetic and biochemical analyses confirm the synergistic negative and positive regulation of cotton drought resistance through GhCBL1A1-GhCIPK6D1 and GhCBL2A1-GhCIPK6D3, respectively, to regulate stomatal movement by controlling the directional flow of K+ in guard cells. These results reveal differentiated roles of GhCIPK6 homologous genes in response to drought stress in upland cotton following polyploidy. The work provides a different perspective for exploring the functionalization and subfunctionalization of duplicated genes in response to polyploidization.

Cotton fiber is one of the main raw materials for the textile industry. In recent years, many cotton fiber quality QTL have been identified, but few were applied in breeding. In this study, a genome wide association study (GWAS) of fiber-quality traits in 265 upland cotton breeding intermediate lines (GhBreeding), combined with genome-wide selective sweep analysis (GSSA) and genomic selection (GS), revealed 25 QTL. Most of these QTL were ignored by only using GWAS. The CRISPR/Cas9 mutants of GhMYB_D13 had shorter fiber, which indicates the credibility of QTL to a certain extent. Then these QTL were verified in other cotton natural populations, 5 stable QTL were found having broad potential for application in breeding. Additionally, among these 5 stable QTL, superior genotypes of 4 showed an enrichment in most improved new varieties widely cultivated currently. These findings provide insights for how to identify more QTL through combined multiple genomic analysis to apply in breeding.

Abstract Background Cotton is a major world cash crop and an important source of natural fiber, oil, and protein. Drought stress is becoming a restrictive factor affecting cotton production. To facilitate the development of drought-tolerant cotton varieties, it is necessary to study the molecular mechanism of drought stress response by exploring key drought-resistant genes and related regulatory factors. Results In this study, two cotton varieties, ZY007 (drought-sensitive) and ZY168 (drought-tolerant), showing obvious phenotypic differences under drought stress, were selected. A total of 25,898 drought-induced genes were identified, exhibiting significant enrichment in pathways related to plant stress responses. Under drought induction, At subgenome expression bias was observed at the whole-genome level, which may be due to stronger inhibition of Dt subgenome expression. A gene co-expression module that was significantly associated with drought resistance was identified. About 90% of topologically associating domain (TAD) boundaries were stable, and 6613 TAD variation events were identified between the two varieties under drought. We identified 92 genes in ZY007 and 98 in ZY168 related to chromatin 3D structural variation and induced by drought stress. These genes are closely linked to the cotton response to drought stress through canonical hormone-responsive pathways, modulation of kinase and phosphatase activities, facilitation of calcium ion transport, and other related molecular mechanisms. Conclusions These results lay a foundation for elucidating the molecular mechanism of the cotton drought response and provide important regulatory locus and gene resources for the future molecular breeding of drought-resistant cotton varieties.

Abstract Background Transposable elements (TEs) have a profound influence on the trajectory of plant evolution, driving genome expansion and catalyzing phenotypic diversification. The pangenome, a comprehensive genetic pool encompassing all variations within a species, serves as an invaluable tool, unaffected by the confounding factors of intraspecific diversity. This allows for a more nuanced exploration of plant TE evolution. Results Here, we constructed a pangenome for diploid A-genome cotton using 344 accessions from representative geographical regions, including 223 from China as the main component. We found 511 Mb of non-reference sequences (NRSs) and revealed the presence of 5479 previously undiscovered protein-coding genes. Our comprehensive approach enabled us to decipher the genetic underpinnings of the distinct geographic distributions of cotton. Notably, we identified 3301 presence-absence variations (PAVs) that are closely tied to gene expression patterns within the pangenome, among which 2342 novel expression quantitative trait loci (eQTLs) were found residing in NRSs. Our investigation also unveiled contrasting patterns of transposon proliferation between diploid and tetraploid cotton, with long terminal repeat (LTR) retrotransposons exhibiting a synchronized surge in polyploids. Furthermore, the invasion of LTR retrotransposons from the A subgenome to the D subgenome triggered a substantial expansion of the latter following polyploidization. In addition, we found that TE insertions were responsible for the loss of 36.2% of species-specific genes, as well as the generation of entirely new species-specific genes. Conclusions Our pangenome analyses provide new insights into cotton genomics and subgenome dynamics after polyploidization and demonstrate the power of pangenome approaches for elucidating transposon impacts and genome evolution.

In this letter, a high performance quasi-vertical GaN-on-Si Schottky barrier diode (SBD) was fabricated by combing in-situ p-GaN layer with hydrogen plasma treatment and controlled diffusion as edge terminations (ETs), where the main junction region of Schottky contact is emerged by pattern etching the top p-GaN layer. The p-n junction with higher barrier height can screen the Schottky contact from high electric field induced by field crowding effect. The hydrogen plasma treatment and controlled diffusion applied to the p-GaN layer further reduces the electric field crowding effect near the p-n junction edge via a gradient junction termination extension structure. As a result, the breakdown voltage of the edge p-GaN terminated SBD with H treatment and diffusion is significantly boosted from 140 V in conventional SBD to 500 V with optimized fabrication process. The on/off current ratio of the diode is as high as 1011@±3 V. The forward current density is 1.45 kA/cm2@3 V and the specific on-resistance is 1.57 $\text{m}\Omega \cdot $ cm2.

Abstract Vertical GaN‐on‐Si devices are promising for the next‐generation high‐voltage power electronics with low cost and high efficiency. However, their applications are impeded by the limited thickness of crack‐free GaN layers and high threading dislocation density (TDD) in the layer. Buffer layers are crucial for stress control while they usually behave with poor surface morphology, which causes early stress relaxation in GaN and limited thickness. Hereby, a terrace engineering approach for the buffer layers is proposed. Through tuning the supersaturation ratio, the terrace width can be manipulated and an atomically smooth AlGaN buffer layer can be realized, which effectively reduces the compressive stress relaxation and provides a firm foundation for thick GaN growth. As a result, a 7.5 µm thick GaN drift layer with TDD as low as 8.6 × 107 cm−2 is achieved on Si substrates. The room temperature electron mobility of the GaN drift layer can be raised up to 1210 cm2 V−1 s−1. The fabricated PiN diode shows a high breakdown voltage of 1058 V as well as a high on/off ratio of 1012. This work thus truly demonstrates the potential of high‐performance and low‐cost GaN‐based electronic as well as optoelectronic devices on Si platforms.

In this study, the physical properties of F ion-implanted GaN were thoroughly studied, and the related electric-field modulation mechanisms in ion-implanted edge termination were revealed. Transmission electron microscopy results indicate that the ion-implanted region maintains a single-crystal structure even with the implantation of high-energy F ions, indicating that the high resistivity of the edge termination region is not induced by amorphization. Alternately, ion implantation-induced deep levels could compensate the electrons and lead to a highly resistive layer. In addition to the bulk effect, the direct bombardment of high-energy F ions resulted in a rough and nitrogen-deficient surface, which was confirmed via atomic force microscopy (AFM) and X-ray photoelectron spectroscopy. The implanted surface with a large density of nitrogen vacancies can accommodate electrons, and it is more conductive than the bulk in the implanted region, which is validated via spreading resistance profiling and conductive AFM measurements. Under reverse bias, the implanted surface can spread the potential in the lateral direction, whereas the acceptor traps capture electrons acting as space charges, shifting the peak electric field into the bulk region in the vertical direction. As a result, the Schottky barrier diode terminated with high-energy F ion-implanted regions exhibits a breakdown voltage of over 1.2 kV.

Abstract Background Despite remarkable advances in our knowledge of epigenetically mediated transcriptional programming of cell differentiation in plants, little is known about chromatin topology and its functional implications in this process. Results To interrogate its significance, we establish the dynamic three-dimensional (3D) genome architecture of the allotetraploid cotton fiber, representing a typical single cell undergoing staged development in plants. We show that the subgenome-relayed switching of the chromatin compartment from active to inactive is coupled with the silencing of developmentally repressed genes, pinpointing subgenome-coordinated contribution to fiber development. We identify 10,571 topologically associating domain-like (TAD-like) structures, of which 25.6% are specifically organized in different stages and 75.23% are subject to partition or fusion between two subgenomes. Notably, dissolution of intricate TAD-like structure cliques showing long-range interactions represents a prominent characteristic at the later developmental stage. Dynamic chromatin loops are found to mediate the rewiring of gene regulatory networks that exhibit a significant difference between the two subgenomes, implicating expression bias of homologous genes. Conclusions This study sheds light on the spatial-temporal asymmetric chromatin structures of two subgenomes in the cotton fiber and offers a new insight into the regulatory orchestration of cell differentiation in plants.

Abstract In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm2, breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm2. High-quality and stable MOS interface is obtained through two-step process, including simple acid cleaning and a following (NH4)2S passivation. Based on the calibration with experiment, the simulation results of physical model are consistent well with the experiment data in transfer, output, and breakdown characteristic curves, which demonstrate the validity of the simulation data obtained by Silvaco technology computer aided design (Silvaco TCAD). The mechanisms of on-state and breakdown are thoroughly studied using Silvaco TCAD physical model. The device parameters, including n−-GaN drift layer, p-GaN channel layer and gate dielectric layer, are systematically designed for optimization. This comprehensive analysis and optimization on the vertical GaN-based trench MOSFETs provide significant guide for vertical GaN-based high power applications.

Wang and colleagues use a complementary GWAS approach to identify genetic loci associated with cotton fiber quality. Using a multiparent advanced-generation inter-cross population, 26 new QTLs related to cotton fiber quality were found.

Fruit branch angle (FBA), a pivotal component of cotton plant architecture, is vital for field and mechanical harvesting. However, the molecular mechanism of FBA formation is poorly understood in cotton. To uncover the genetic basis for FBA formation in cotton, we performed a genome-wide association study (GWAS) of 163 cotton accessions with re-sequencing data. A total of 55 SNPs and 18 candidate genes were significantly associated with FBA trait. By combining GWAS and transcriptome analysis, four genes underlying FBA were identified. An FBA-associated candidate gene Ghi_A09G08736, which is homologous to SAUR46 in Arabidopsis thaliana, was detected in our study. In addition, transcriptomic evidence was provided to show that gravity and light were implicated in the FBA formation. This study provides new insights into the genetic architecture of FBA that informs architecture breeding in cotton.

Abstract Background Casein kinase I (CKI) is a kind of serine/threonine protein kinase highly conserved in plants and animals. Although molecular function of individual member of CKI family has been investigated in Arabidopsis, little is known about their evolution and functions in Gossypium. Results In this study, five cotton species were applied to study CKI gene family in cotton, twenty-two species were applied to trace the origin and divergence of CKI genes. Four important insights were gained: (i) the cotton CKI genes were classified into two types based on their structural characteristics; (ii) two types of CKI genes expanded with tetraploid event in cotton; (iii) two types of CKI genes likely diverged about 1.5 billion years ago when red and green algae diverged; (iv) two types of cotton CKI genes which highly expressed in leaves showed stronger response to photoperiod (circadian clock) and light signal, and most two types of CKI genes highly expressed in anther showed identical heat inducible expression during anther development in tetraploid cotton (Gossypium hirsutum). Conclusion This study provides genome-wide insights into the evolutionary history of cotton CKI genes and lays a foundation for further investigation of the functional differentiation of two types of CKI genes in specific developmental processes and environmental stress conditions.

Abstract Background Heterosis has been exploited for decades in different crops due to resulting in dramatic increases in yield, but relatively little molecular evidence on this topic was reported in cotton. Results The elite cotton hybrid variety ‘Huaza Mian H318’ (H318) and its parental lines were used to explore the source of its yield heterosis. A four-year investigation of yield-related traits showed that the boll number of H318 showed higher stability than that of its two parents, both in suitable and unsuitable climate years. In addition, the hybrid H318 grew faster and showed higher fresh and dry weights than its parental lines at the seedling stage. Transcriptome analysis of seedlings identified 17,308 differentially expressed genes (DEGs) between H318 and its parental lines, and 3490 extremely changed DEGs were screened out for later analysis. Most DEGs (3472/3490) were gathered between H318 and its paternal line (4–5), and only 64 DEGs were found between H318 and its maternal line (B0011), which implied that H318 displays more similar transcriptional patterns to its maternal parent at the seedling stage. GO and KEGG analyses showed that these DEGs were highly enriched in photosynthesis, lipid metabolic, carbohydrate metabolic and oxidation-reduction processes, and the expression level of these DEGs was significantly higher in H318 relative to its parental lines, which implied that photosynthesis, metabolism and stress resistances were enhanced in H318. Conclusion The enhanced photosynthesis, lipid and carbohydrate metabolic capabilities contribute to the heterosis of H318 at the seedling stage, and establishes a material foundation for subsequent higher boll-setting rates in complex field environments.

Abstract Background Millennia of directional human selection has reshaped the genomic architecture of cultivated cotton relative to wild counterparts, but we have limited understanding of the selective retention and fractionation of genomic components. Results We construct a comprehensive genomic variome based on 1961 cottons and identify 456 Mb and 357 Mb of sequence with domestication and improvement selection signals and 162 loci, 84 of which are novel, including 47 loci associated with 16 agronomic traits. Using pan-genome analyses, we identify 32,569 and 8851 non-reference genes lost from Gossypium hirsutum and Gossypium barbadense reference genomes respectively, of which 38.2% (39,278) and 14.2% (11,359) of genes exhibit presence/absence variation (PAV). We document the landscape of PAV selection accompanied by asymmetric gene gain and loss and identify 124 PAVs linked to favorable fiber quality and yield loci. Conclusions This variation repertoire points to genomic divergence during cotton domestication and improvement, which informs the characterization of favorable gene alleles for improved breeding practice using a pan-genome-based approach.

Black pepper (Piper nigrum) belongs to the long-isolated lineage of basal angiosperm and its fruit has been used for food spice and phytomedicines for thousands of years. Here, the authors assemble the reference genome of this species and analyze gene families associated with piperine biosynthesis.

Abstract Background DNA methylation is a crucial epigenetic modification, which is involved in many biological processes, including gene expression regulation, embryonic development, cell differentiation and genomic imprinting etc. And it also involves many key regulatory genes in eukaryotes. By tracing the evolutionary history of methylation-related genes, we can understand the origin and expansion time of these genes, which helps to understand the evolutionary history of plants, and we can also understand the changes of DNA methylation patterns in different species. However, most studies on the evolution of methylation-related genes failed to be carried out for the whole DNA methylation pathway. Results In this study, we conducted a comprehensive identification of 33 methylation-related genes in 77 species, and investigated gene origin and evolution throughout the plant kingdom. We found that the origin of genes responsible for methylation maintenance and demethylation evolved early, while most de novo methylation-related genes appeared late. The methylation-related genes were expanded by whole genome duplication and tandem replication, but were also accompanied by a large number of gene absence events in different species. The gene length and intron length varied a lot in different species, but exon structure and functional domains were relatively conserved. The phylogenetic relationships of methylation-related genes were traced to reveal the evolution history of DNA methylation in different species. The expression patterns of methylation-related genes have changed during the evolution of species, and the expression patterns of these genes in different species can be clustered into four categories. Conclusions The study describes a global characterization of DNA methylation-related genes in the plant kingdom. The similarities and differences in origin time, gene structure and phylogenetic relationship of these genes lead us to understand the evolutionary conservation and dynamics of DNA methylation in plants.

In recent years, in rural geographic studies, the topic of multifunctions of rural areas has been gaining increasing interest, especially in China, which, as an agricultural power, is undergoing new urbanization and rural revitalization. As far as China is concerned, to classify administrative villages from the perspective of their functions will contribute to scientifically guiding the configuration of urban-rural factors in terms of different regions and villages multifunctional types. This paper takes 3042 administrative villages of Tai’an city of Shandong province in eastern China as its basic study units and establishes a mapping system between land use types and rural territorial sub-functions, identifies their multifunctional types via cluster analysis, quantitatively analyzes their influencing factors with multivariate logistic regression, and summarizes their spatial structure characteristics. The results show that: 3042 administrative villages in Tai’an city can be functionally classified into seven types. The village multifunctional types are jointly decided by cities and natural production conditions. The distribution of all types of villages shows a “non-agricultural production to agricultural production” outward expansion structure. Our study can expand the research contents and methods of rural territorial multifunction.

Although the regulatory function of miRNAs and their targets have been characterized in model plants, a possible underlying role in the cotton response to herbivore infestation has not been determined. To investigate this, we performed small RNA and degradome sequencing between resistant and susceptible cotton cultivar following infestation with the generalist herbivore whitefly. In total, the 260 miRNA families and 241 targets were identified. Quantitative-PCR analysis revealed that several miRNAs and their corresponding targets exhibited dynamic spatio-temporal expression patterns. Moreover, 17 miRNA precursors were generated from 29 long intergenic non-coding RNA (lincRNA) transcripts. The genome-wide analysis also led to the identification of 85 phased small interfering RNA (phasiRNA) loci. Among these, nine PHAS genes were triggered by miR167, miR390, miR482a, and two novel miRNAs, including those encoding a leucine-rich repeat (LRR) disease resistance protein, an auxin response factor (ARF) and MYB transcription factors. Through combined modeling and experimental data, we explored and expanded the miR390-tasiARF cascade during the cotton response to whitefly. Virus-induced gene silencing (VIGS) of ARF8 from miR390 target in whitefly-resistant cotton plants increased auxin and jasmonic acid (JA) accumulation, resulting in increased tolerance to whitefly infestation. These results highlight the provides a useful transcriptomic resource for plant-herbivore interaction.

The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0−600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0−400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400−600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC.

Pectins are fundamental polysaccharides in the plant primary cell wall. Pectins are synthesized and secreted to cell walls as highly methyl-esterified polymers and then demethyl-esterified by pectin methylesterases (PMEs), which are spatially regulated by pectin methylesterase inhibitors (PMEIs). Although PME and PMEI genes are pivotal in plant cell wall formation, few studies have focused on the evolutionary patterns of the PME and PMEI gene families. In this study, the gene origin, evolution, and expression diversity of these two families were systematically analyzed using 11 representative species, including algae, bryophytes, lycophytes and flowering land plants. The results show that 1) for the two subfamilies (PME and proPME) of PME, the origin of the PME subfamily is consistent with the appearance of pectins in early charophyte cell walls, 2) Whole genome duplication (WGD) and tandem duplication contribute to the expansion of proPME and PMEI families in land plants, 3) Evidence of selection pressure shows that the proPME and PMEI families have rapidly evolved, particularly the PMEI family in vascular plants, and 4) Comparative expression profile analysis of the two families indicates that the eudicot Arabidopsis and monocot rice have different expression patterns. In addition, the gene structure and sequence analyses show that the origin of the PMEI domain may be derived from the neofunctionalization of the pro domain after WGD. This study will advance the evolutionary understanding of the PME and PMEI families and plant cell wall development.

H(+)-translocating inorganic pyrophosphatases (H(+)-PPase) were recognized as the original energy donors in the development of plants. A large number of researchers have shown that H(+)-PPase could be an early-originated protein that participated in many important biochemical and physiological processes. In this study we cloned 14 novel sequences from 7 eremophytes: Sophora alopecuroid (Sa), Glycyrrhiza uralensis (Gu), Glycyrrhiza inflata (Gi), Suaeda salsa (Ss), Suaeda rigida (Sr), Halostachys caspica (Hc), and Karelinia caspia (Kc). These novel sequences included 6 ORFs and 8 fragments, and they were identified as H(+)-PPases based on the typical conserved domains. Besides the identified domains, sequence alignment showed that there still were two novel conserved motifs. A phylogenetic tree was constructed, including the 14 novel H(+)-PPase amino acid sequences and the other 34 identified H(+)-PPase protein sequences representing plants, algae, protozoans and bacteria. It was shown that these 48 H(+)-PPases were classified into two groups: type I and type II H(+)-PPase. The novel 14 eremophyte H(+)-PPases were classified into the type I H(+)-PPase. The 3D structures of these H(+)-PPase proteins were predicted, which suggested that all type I H(+)-PPases from higher plants and algae were homodimers, while other type I H(+)-PPases from bacteria and protozoans and all type II H(+)-PPases were monomers. The 3D structures of these novel H(+)-PPases were homodimers except for SaVP3, which was a monomer. This regular structure could provide important evidence for the evolutionary origin and study of the relationship between the structure and function among members of the H(+)-PPase family.

Although biochemists and geneticists have studied the cotton flower for more than one century, little is known about the molecular mechanisms underlying the dramatic color change that occurs during its short developmental life following blooming. Through the analysis of world cotton germplasms, we found that all of the flowers underwent color changes post-anthesis, but there is a diverse array of petal colors among cotton species, with cream, yellow and red colors dominating the color scheme. Genetic and biochemical analyses indicated that both the original cream and red colors and the color changes post-anthesis were related to flavonoid content. The anthocyanin content and the expression of biosynthesis genes were both increased from blooming to one day post-anthesis (DPA) when the flower was withering and undergoing abscission. Our results indicated that the color changes and flavonoid biosynthesis of cotton flowers were precisely controlled and genetically regulated. In addition, flavonol synthase (FLS) genes involved in flavonol biosynthesis showed specific expression at 11 am when the flowers were fully opened. The anthocyanidin reductase (ANR) genes, which are responsible for proanthocyanidins biosynthesis, showed the highest expression at 6 pm on 0 DPA, when the flowers were withered. Light showed primary, moderate and little effects on flavonol, anthocyanin and proanthocyanidin biosynthesis, respectively. Flavonol biosynthesis was in response to light exposure, while anthocyanin biosynthesis was involved in flower color changes. Further expression analysis of flavonoid genes in flowers of wild type and a flavanone 3-hydroxylase (F3H) silenced line showed that the development of cotton flower color was controlled by a complex interaction between genes and light. These results present novel information regarding flavonoids metabolism and flower development.

The unique nature of built-in electric field induced positive/negative charge pairs of polar semiconductor heterojunction structure has led to a more realistic device model for hexagonal III-nitride HEMT. In this modeling approach, the distribution of charge carriers is dictated by the electrostatic potential profile instead of Femi statistics. The proposed device model is found suitable to explain peculiar properties of GaN HEMT structures, including: (1) Discrepancy in measured conventional linear transmission line model (LTLM) sheet resistance and contactless sheet resistance of GaN HEMT with thin barrier layer. (2) Below bandgap radiation from forward biased Nickel Schottky barrier diode on GaN HEMT structure. (3) GaN HEMT barrier layer doping has negligible effect on transistor channel sheet charge density. [ABSTRACT FROM AUTHOR]

In this paper, we report the device performance of a high-voltage enhancement-mode (E-mode) GaN MOSHEMT on silicon substrate. Normally off operation is realized by a self-terminated precision gate recess process on an optimized high-electron mobility transistor structure. The GaN MOSHEMT is fully pinched off at zero gate bias, suggesting a "true" normally off operation. The threshold voltage is 0.4 V with a drain current density of 1 μA/mm as the criteria. The device with 15-μm gate-drain distance and 100-μm gate width exhibits a maximum drain current of 356 mA/mm at 8-V gate bias. The on/off current ratio of the device is larger than 1010 with a subthreshold slope of 80 mV/dec. The gate leakage current is below 10-7 mA/mm up to 9-V gate bias. The off-state breakdown voltage (BV) is as high as 1528 V (880 V) measured with floating (grounded) silicon substrate at a drain leakage current criterion of 5 μA/mm. The specific on-resistance (RON,SP) of the device is 2.79 mΩ⋅cm², and the power figure of merit (BV²/RON,SP) is 277 MW/cm². High-voltage pulsed I-V measurement indicates that the dynamic on-resistance is only 1.6 times the static one with a pulse width of 10 μsat 400-V off-state quiescent drain bias. The high performance of the normally off GaN MOSHEMT is supposed to benefit from the high quality low pressure chemical vapor deposition Si3N4 passivation layer and the advanced E-mode device fabrication process. [ABSTRACT FROM AUTHOR]

The compatibility of Au-free (Ti/Al/Ti/TiN) ohmic contacts in the gate-first double-metal (GFDM) process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) and Schottky barrier diodes (SBDs) on the same 150-mm wafer was investigated and discussed for the first time, including contact pretreatments, Al diffusion in dielectric layers, and vias (contact windows between two metal layers) etching conditions. All of these steps are crucial to ohmic contacts aswell as overall AlGaN/GaN device fabrication process. With the optimized ohmic contacts steps, not only an extremely low ohmic contact resistance ( RC) value of 1.07 Ω·mm but also an excellent uniformity on the 150-mm wafer was obtained. The performance and uniformity of the MIS-HEMTs and SBDs based on the optimized GFDM process were also discussed. [ABSTRACT FROM AUTHOR]

Calcium (Ca2+) is necessary for fiber cell development in cotton (Gossypium hirsutum), both as a cell wall structural component and for environmental signaling responses. It is also known that potassium (K+) plays a critical role in cotton fiber cell elongation. However, it is unclear whether Ca2+ integrates its activities with K+ to regulate fiber elongation. Here, we report the novel discovery that Ca2+ deficiency, when integrated with K+ signaling, promotes fiber elongation. Using inductively coupled plasma-mass spectrometry (ICP-MS), we determined dynamic profiles of the ionome in ovules and fibers at different developmental stages, and found that a high accumulation of macroelements, but not Ca2+, was associated with longer fibers. Using an in vitro ovule culture system, we found that under Ca2+-deficient conditions, sufficient K+ (52 mM) rapidly induced ovule and fiber browning, while reduced K+ (2 or 27 mM) not only suppressed tissue browning but also altered fiber elongation. Reduced K+ also enhanced reactive oxygen species scavenging ability and maintained abscisic acid and jasmonic acid levels, which in turn compensated for Ca2+ deficiency. Ca2+ deficiency combined with reduced K+ (0 mM Ca2+ and 27 mM K+) produced longer fibers in cultured ovules, due to cell wall loosening by phytosulfokine (PSK), expansin (EXP), and xyloglucan endotransglycosylase/hydrolase (XTH), and an increase of the K+ content of fiber cells. Using transgenic cotton, we showed that the CBL-INTERACTING PROTEIN KINASE 6 (GhCIPK6) gene mediates the uptake of K+ under Ca2+-deficient conditions. This study establishes a new link between Ca2+, K+, and fiber elongation. [ABSTRACT FROM AUTHOR]

Extant research pays little attention to unorganized migrant workers' skill accumulation/upgrading from the perspective of the labor supply. This paper takes China as an example to explore the factors influencing the skill accumulation of rural–urban migrant workers (RUMWs), with the purpose of discovering how to sustain or reshape regional competitive advantages by improving RUMWs' skill accumulation. Structured questionnaire surveys were adopted for data collection in Suzhou City, Jiangsu Province and Taizhou City, Zhejiang Province located in the Yangtze River Delta in eastern China. In total, 700 questionnaires were issued and 491 effective questionnaires were recovered. It takes the perspective of individual laborers, with special regard to the effects of localization on the laborers' skill accumulation within the context of globalization. It adopts a broad viewpoint including intra-firm skill-biased strategy (as a response to intense competition), inter-firm relationships, and the accessibility of local non-firm organizations. The findings indicate that firms' skill preference, which impacts employees' skills and innovation ability and stimulates them to learn with initiative, have a significant influence on RUMWs' skill accumulation. In terms of collective efficiency based on the co-competitive relationship between local firms, the more intensive interactions are, the more opportunities RUMWs are afforded for skill accumulation. The accessibility of local institutions and favorable policies also benefit RUMWs' skill accumulation. In addition, the place itself, as a synthesized space of a firm's internal labor-management relations and inter-organizational relations, also exerts an influence on and causes regional differences in RUMWs' skill accumulation. [ABSTRACT FROM AUTHOR]

High-quality cotton fibre equates to a more comfortable textile. Fibre length is an important index of fibre quality. Hydrogen peroxide (H2O2) acts as a signalling molecule in the regulation of fibre elongation. Results from in vitro ovule culture suggest that the alteration of fibre cell H2O2 levels affects fibre development. Ascorbate peroxidase (APX) is an important reactive oxygen species (ROS) scavenging enzyme, and we found that GhAPX1AT/DT encoded one member of the previously unrealized group of cytosolic APXs (cAPXs) that were preferentially expressed during the fibre elongation stage. Transgenic cottons with up- and down-regulation of GhAPX1AT/DT were generated to control fibre endogenous levels of H2O2. Suppression of all cAPX (IAO) resulted in a 3.5-fold increase in H2O2 level in fibres and oxidative stress, which significantly suppressed fibre elongation. The fibre length of transgenic lines with over-expression or specific down-regulation of GhAPX1AT/DT did not show any obvious change. However, the fibres in the over-expression lines exhibited higher tolerance to oxidative stress. Differentially expressed genes (DEGs) in fibres at 10 days post-anthesis (DPA) of IAO lines identified by RNA-seq were related to redox homeostasis, signalling pathways, stress responses and cell wall synthesis, and the DEGs that were up-regulated in IAO lines were also upregulated in the 10 DPA and 20 DPA fibres of wild cotton compared with domesticated cotton. These results suggest that optimal H2O2 levels and redox state regulated by cytosolic APX are key mechanisms regulating fibre elongation, and dysregulation of the increase in H2O2 induces oxidative stress and results in shorter fibres by initiating secondary cell wall-related gene expression. [ABSTRACT FROM AUTHOR]

Background: Since upland cotton was introduced into China during the 1920s-1950s, hundreds of inbreed cultivars have been developed. To explore the molecular diversity, population structure and elite alleles, 503 inbred cultivars developed in China and some foreign cultivars from the United States and the Soviet Union were collected and analyzed by 494 genome-wide SSRs (Simple Sequence Repeats). Methods: Four hundred and ninety-four pairs of SSRs with high polymorphism and uniform distribution on 26 chromosomes were used to scan polymorphisms in 503 nation-wide upland cottons. The programming language R was used to make boxplots for the phenotypic traits in different environments. Molecular marker data and 6 fiber quality traits were analyzed by the method of MLM (mixed linear model) (P + G + Q + K) in the TASSEL software package on the basis of the population structure and linkage disequilibrium analysis. The loci of elite allelic variation and typical materials carrying elite alleles were identified based on phenotypic effect values. Results: A total of 179 markers were polymorphic and generated 426 allele loci; the population based on molecular diversity was classified into seven subpopulations corresponding to pedigree origin, ecological and geographical distribution. The attenuation distance of linkage disequilibrium dropped significantly up to 0-5 cM. Association mapping for fiber quality showed that 216 marker loci were associated with fiber quality traits (P < 0.05) explaining 0.58 % ~ 5.12 % of the phenotypic variation, with an average of 2.70 %. Thirteen marker loci were coincident with other studies, and three were detected for the same trait. Seven quantitative trait loci were related to known genes in fiber development. Based on phenotypic effects, 48 typical materials that contained the elite allele loci related to fiber quality traits were identified and are widely used in practical breeding. Conclusions: The molecular diversity and population structure of 503 nation-wide upland cottons in China were evaluated by 494 genome-wide SSRs, and association mapping for fiber quality revealed known and novel elite alleles. The molecular diversity provides a guide for parental mating in cotton breeding, and the association mapping results will aid in the fine-mapping genes related to fiber quality traits and facilitate further studies on candidate genes. [ABSTRACT FROM AUTHOR]

We present a methodology and the corresponding experimental results to identify the exact location of the traps that induce hot electron trapping in AlGaN/GaN heterostructures grown on Si substrates. The methodology is based on a combination of lateral and vertical electrical stress measurements employing three ohmic terminals on the test sample structure with different GaN buffer designs. By monitoring the evolution of the lateral current during lateral as well as vertical stress application, we investigate the trapping/detrapping behaviors of the hot electrons and identify that the traps correlated with current degradation are in fact located in the GaN buffer layers. The trap activation energies (0.38-0.39 eV and 0.57-0.59 eV) extracted from either lateral or vertical stress measurements are in good agreement with each other, also confirming the identification. By further comparing the trapping behaviors in two samples with different growth conditions of an unintentionally doped GaN layer, we conclude that the traps are most likely in the unintentionally doped GaN layer but of different origins. It is suggested that the 0.38-0.39 eV trap is related to residual carbon incorporation while the 0.57-0.59 eV trap is correlated with native defects or complexes. [ABSTRACT FROM AUTHOR]

High-temperature transport properties in high-mobility lattice-matched InAlN/GaN heterostructures have been investigated. An interesting hysteresis phenomenon of the two dimensional electron gas (2DEG) density is observed in the temperature-dependent Hall measurements. After hightemperature thermal cycles treatment, the reduction of the 2DEG density is observed, which is more serious in thinner InAlN barrier samples. This reduction can then be recovered by light illumination. We attribute these behaviors to the shallow trap states with energy level above the Fermi level in the GaN buffer layer. The electrons in the 2DEG are thermal-excited when temperature is increased and then trapped by these shallow trap states in the buffer layer, resulting in the reduction and hysteresis phenomenon of their density. Three trap states are observed in the GaN buffer layer and CGa may be one of the candidates responsible for the observed behaviors. Our results provide an alternative approach to assess the quality of InAlN/GaN heterostructures for applications in high-temperature electronic devices. [ABSTRACT FROM AUTHOR]

We report the interface characterization of Al2O3/AlN/GaN MOS (metal-oxide-semiconductor) structures with an AlN interfacial layer. A thin monocrystal-like interfacial layer (AlN) is formed at the Al2O3/GaN to effectively block oxygen from the GaN surface and prevent the formation of detrimental Ga-O bonds. The suppression of Ga-O bonds is validated by X-ray photoelectron spectroscopy of the critical interface. Frequency-dispersion in C-V characteristics has been significantly reduced, owing to improved interface quality. Furthermore, using the conventional conductance method suitable for extracting the interface trap density Dit in MOS structures, Dit in the device with AlN was determined to be in the range of 1011-1012eV-1cm-2, showing one order of magnitude lower than that without AlN. Border traps near the gate-dielectric/GaN interface were identified and shown to be suppressed by the AlN interfacial layer as well. [ABSTRACT FROM AUTHOR]

AlGaN/GaN metal oxide semiconductor high electron mobility transistors (MOSHEMTs) with thick (>35 nm), high-κ (TiO2/NiO), submicrometer-footprint (0.4 μm) gate dielectric are found to exhibit two orders of magnitude in lower gate leakage current (~1 nA/mm up to +3-V applied gate bias), higher IMAX (709 mA/mm), and higher drain breakdown voltage, compared to Schottky barrier (SB) HEMTs of the same geometry. The maximum extrinsic transconductance of both the MOSHEMTs and the SBHEMTs with 2 × 80-μm gate fingers is measured to be 149 mS/mm. The addition of the submicrometerfootprint gate oxide layer only results in a small reduction of the current gain cutoff frequency (21 versus 25 GHz, derived from S-parameter test data) because of the high permittivity (κ ≈ 100) of the gate dielectric. This high-performance submicrometer-footprint MOSHEMT is highly promising for microwave power amplifier applications in communication and radar systems. [ABSTRACT FROM AUTHOR]

The oxidation mechanism in self-terminating wet etching technique with thermal oxidation of AlGaN layer followed by etching in KOH solution is investigated. Spike-shape remnants of oxidised AlGaN are observed at the initial stage of wet etching in KOH solution, which could be completely etched away after enough etching time. Transmission electron microscope/energy dispersive spectroscopy analysis indicates the existence of crystalline AlGaN inside the remnants. Finally, a possible explanation is given that the oxide channels from AlGaN surface towards AlGaN/GaN interface generated during thermal oxidation are firstly etched away at the initial stage of KOH wet etching, then after enough time these remnants with non-c axis crystal orientation surfaces exposed to KOH solution could be completely etched away leaving GaN layer beneath unaffected, which realises self-terminating etching. [ABSTRACT FROM AUTHOR]

In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (Vth) of ∼1.8 V, a maximum drain current of ∼328 mA/mm, a forward gate leakage current of ∼10−6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (∼7.6%) of the threshold voltage was confirmed up to 300 °C. [ABSTRACT FROM AUTHOR]

By a self-terminating gate recess etching technique, a normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor (MISFET) was fabricated using Al2O3/Si3N4 bilayer as gate dielectrics. Owing to the high breakdown electric field (∼10 MV/cm) of the gate dielectrics, the device exhibits a large gate swing of 18 V, a high threshold voltage of 1.7 V (at ID = 100 µA/mm), a large maximum drain current of 534 mA/mm, a gate leakage current lower than 20 nA/mm in the whole gate swing, and a high OFF-state breakdown voltage of 1282 V. Furthermore, owing to the high gate overdrive (VGS − VTH), the on-resistance of the device only increases by 5.4% under a constant stress of VGS/VDS = 18 V/1 V. [ABSTRACT FROM AUTHOR]

A self-terminating gate recess wet etching technique with thermal oxidation of the AlGaN/GaN layer followed by etching in potassium hydroxide (KOH) solution was recently proposed by the present authors for normally-off AlGaN/GaN metal-oxide semiconductor field effect transistors (MOSFETs). In this present reported work, the oxidation process inside the AlGaN/GaN heterostructure involved in this technique was analysed using several material characterisation methods. The measurement results show that the concentration and depth of the O element distribution increase with increased thermal oxidation temperature. It is worth noting that after 650°C oxidation almost no O element could be found in the GaN layer and the O element mainly locates in the AlGaN layer with an obvious correlation between the distribution of Al and O elements, where the Al(Ga)-oxide was detected by X-ray photoelectron spectroscopy, which could be etched by 70°C KOH. Thus, self-terminating wet etching on the AlGaN/GaN material is achieved. [ABSTRACT FROM AUTHOR]

The time-dependent threshold voltage drift induced by fast interface traps in a fully gate-recessed normally-off GaN MOSFET is studied. It is found that the degree and time scale of the shift in threshold voltage are consistent with the density and time constant of interface traps at the MOS interface. The device based on wet etching delivers higher interface quality and threshold voltage stability than that based on dry etching. Nitrogen deficiency and high oxygen coverage are considered to be the origins of the high interface trap density in the MOSFET fabricated by dry etching. [ABSTRACT FROM AUTHOR]

300°C operation of a normally-off AlGaN/GaN metal-oxide semiconductor field-effect transistor (MOSFET) is successfully demonstrated, which is fabricated using a self-terminating gate recess etching technique. At 300°C, by employing a 15 nm-thick Al2O3 as the gate dielectric deposited by atomic layer deposition, the fabricated normally-off MOSFET exhibits a threshold voltage (Vth) of 3.2 V, a low off-state leakage current of ~10-7 A/mm and a low forward gate leakage current of ~10-7 A/mm. Thus, a high on/off current ratio of ~ 106 is obtained. Furthermore, the normally-off MOSFET also exhibits small variations in terms of its Vth from room temperature to 300°C with a maximum relative variation of 6.7% in a such temperature range. These results make this normally-off AlGaN/GaN MOSFET very promising for high-temperature digital electronics. [ABSTRACT FROM AUTHOR]

Threshold voltage drift under gate bias stress was investigated in gate-recessed enhancement mode (E-mode) GaN MOSFET and depletion mode (D-mode) GaN MOS high-electron-mobility transistor (MOSHEMT) with Al2O3 gate dielectric layer. Besides the positive shift of threshold voltage in both devices under positive gate stress, it is also found that positive shift could also exist in E-mode GaN MOSFET under negative gate bias stress, while negative shift is observed in D-mode MOSHEMT. A three-step trapping and detrapping process was observed in the drain current transient of the device after negative gate bias stress. It was suggested that gate electron injection and the following trapping in the “damaged” gate recessed GaN channel layer is the dominant mechanism for the positive shift of the threshold voltage under negative gate bias in the enhancement mode GaN MOSFET. [ABSTRACT FROM AUTHOR]

Panax ginseng, Coptis chinensis, Astragalus membranaceus, Ligusticum wallichii, Gastrodia elata and Salvia miltiorrhiza were used as the research objects. The effects of irradiation on the extraction rate of the main components of Chinese medicinal materials were studied by 60Co-γ irradiation and electron beam accelerator. Solvent ultrasonography was used to extract the active components of Chinese medicinal materials, the content changes of ginsenoside, gastrodin and other effective components were investigated. High performance liquid chromatography and ultraviolet spectroscopy results showed that the content of main active ingredients in Coptis chinensis and Astragalus membranaceus could be increased, the proportion of different kind of ginsenosides could be changed, and the content of effective ingredients such as Ligusticum wallichii, Gastrodia elata and Salvia miltiorrhiza could be decreased after assisted treatment of certain irradiation dosage. Irradiation-assisted treatment is beneficial to improve the extraction rate of effective components of Chinese medicinal materials with relatively stable structure or high cellulose content, which is not easy to extract. The effect of irradiation on the extraction of six kinds of Chinese medicinal materials was studied in this paper, which provided the research basis for the application of irradiation technology in the extraction of Chinese medicinal materials.

A novel simple approach to extract parasitic source and drain resistances of high electron mobility transistors (HEMT) is presented. This method could obtain the parasitic resistances by determining the portion of channel resistance involved in the measured end-resistance based on the identification of the channel position corresponding to the measured floating-gate voltage with the floating-gate, drain- and source-current-injection configurations on a single device. The technique is demonstrated on AlGaN/GaN HEMTs. It is found that the ratio of the channel resistance involving in the end-resistance to the total channel resistance approaches to a constant independent on the gate length, which could simplify the practical application of this novel method. The experimental results show that the source and drain resistances extracted by this method coincide with series resistance extracted by traditional Transmission Line Model (TLM) measurement. [ABSTRACT FROM AUTHOR]