404 results on '"Meneghesso, Gaudenzio"'
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2. Analysis of CdSe as an alternative buffer layer for Sb2Se3 solar cells
3. How the selenium distribution in CdTe affects the carrier properties of CdSeTe/CdTe solar cells
4. Trap-state mapping to model GaN transistors dynamic performance
5. Role of p-GaN layer thickness in the degradation of InGaN-GaN MQW solar cells under 405 nm laser excitation
6. Modeling the electrical characteristic of InGaN/GaN blue-violet LED structure under electrical stress
7. Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress
8. Electrical, optical characterization and degradation of Cu(InGa)Se2 devices with fluorine-doped tin oxide back contact
9. Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
10. Glass-ceramic composites for high-power white-light-emitting diodes
11. Influence of CdTe solar cell properties on stability at high temperatures
12. A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects
13. Moisture resistance in perovskite solar cells attributed to a water-splitting layer
14. BTI saturation and universal relaxation in SiC power MOSFETs
15. Coupling halide perovskites with different materials: From doping to nanocomposites, beyond photovoltaics
16. A film-forming graphene/diketopyrrolopyrrole covalent hybrid with far-red optical features: Evidence of photo-stability
17. Reliability investigation on CdTe solar cells submitted to short-term thermal stress
18. Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation
19. Evidence of Spiro-OMeTAD De-doping by tert-Butylpyridine Additive in Hole-Transporting Layers for Perovskite Solar Cells
20. Quantum efficiency of InGaN–GaN multi-quantum well solar cells: Experimental characterization and modeling.
21. Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization.
22. Field and hot electron-induced degradation in GaN-based power MIS-HEMTs
23. Photon-induced degradation of InGaN-based LED in open-circuit conditions investigated by steady-state photocapacitance and photoluminescence.
24. Impact of thermal annealing on deep levels in nitrogen-implanted β-Ga2O3 Schottky barrier diodes.
25. GaN-based power devices: Physics, reliability, and perspectives.
26. Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric.
27. Comparison of high efficiency flexible CdTe solar cells on different substrates at low temperature deposition
28. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
29. Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
30. Performance and Degradation of Commercial Ultraviolet‐C Light‐Emitting Diodes for Disinfection Purposes.
31. Thermal droop in III-nitride based light-emitting diodes: Physical origin and perspectives.
32. Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations.
33. Plasmon‐Assisted Operando Self‐Healing of Cu2O Photocathodes.
34. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results.
35. Semiclassical simulation of trap-assisted tunneling in GaN-based light-emitting diodes
36. A comprehensive study of MEMS behavior under EOS/ESD events: Breakdown characterization, dielectric charging, and realistic cures
37. High Open‐Circuit Voltage Cs2AgBiBr6 Carbon‐Based Perovskite Solar Cells via Green Processing of Ultrasonic Spray‐Coated Carbon Electrodes from Waste Tire Sources.
38. Preventing infectious diseases in Intensive Care Unit by medical devices remote control: Lessons from COVID-19
39. Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode.
40. Preparing healthcare, academic institutions, and notified bodies for their involvement in the innovation of medical devices under the new European regulation.
41. GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms
42. An Investigation of the Electrical Degradation of GaN High-Electron-Mobility Transistors by Numerical Simulations of DC Characteristics and Scattering Parameters
43. Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs
44. A statistical approach to microdose induced degradation in FinFET devices
45. Dose enhancement due to interconnects in deep-submicron mosfets exposed to X-rays
46. Analysis of the role of current, temperature, and optical power in the degradation of InGaN-based laser diodes
47. Logarithmic trapping and detrapping in β-Ga2O3 MOSFETs: Experimental analysis and modeling.
48. Defects and Reliability of GaN‐Based LEDs: Review and Perspectives.
49. Microdose and breakdown effects induced by heavy ions on sub 32-nm triple-gate SOI FETs
50. Reducing the EMI susceptibility of a Kuijk bandgap
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