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Flat band systems are commonly associated with compact localized states (CLSs) that arise from the macroscopic degeneracy of eigenstates at the flat band energy. However, in the case of singular flat bands, conventional localized flat band states are incomplete, leading to the existence of noncontractible loop states (NLSs) with nontrivial real-space topology. In this study, we experimentally and analytically demonstrate the existence of NLSs in a 2D photonic borophene lattice without a CLS counterpart, owing to a band that is flat only along high-symmetry lines and dispersive along others. Our findings challenge the conventional notion that NLSs are necessarily linked to robust boundary modes due to a bulk-boundary correspondence. Protected by the band flatness that originates from band touching, NLSs play a significant role in investigating the fundamental physics of flat band systems.

Photonic lattices have emerged as an ideal testbed for localizing light in space. Among others, the most promising approach is based on flat band systems and their related nondiffracting compact localized states. So far, only compact localized states arising from a single flat band have been found. Such states typically appear static, thus not allowing adaptive or evolutionary features of light localization. Here, we report on the first experimental realization of an oscillating compact localized state arising from multiple flat bands. We observe an oscillatory intensity beating during propagation in a two-dimensional photonic decorated Lieb lattice. The photonic system is realized by direct femtosecond laser writing and hosts most importantly multiple flat bands at different eigenenergies in its band structure. Our results open new avenues for evolution dynamics in the up to now static phenomenon of light localization in periodic waveguide structures and extend the current understanding of light localization in flat band systems. [ABSTRACT FROM AUTHOR]

Singular and nonsingular flat bands in a Sierpinski fractal‐like photonic lattice are reported. It is demonstrated that the lowest two bands, being isolated and degenerate due to geometrical frustration, are nonsingular and thus can be spanned by a complete set of compact localized states. These states are experimentally proven to propagate diffractionless in the photonic lattice. The results reveal the interplay between geometrical frustration, degenerate flat bands, and compact localized states in a single photonic lattice, and pave the way to photonic spin liquid ground states. [ABSTRACT FROM AUTHOR]

This paper examines the fundamental reliability differences between n-p-n and p-n-p SiGe HBTs. The device profile, hot carrier transport, and oxide interface differences between the two device types are explored in detail as they relate to device reliability. After careful analysis under identical electrical stress conditions for n-p-n and p-n-p, the differences in activation energies for the damage of the oxide interfaces of the two devices is determined to be the primary cause for accelerated degradation seen in p-n-p SiGe HBTs. An analytical model has been adapted for simulating these aging differences between p-n-p and n-p-n devices. This paper has significant implications for predicting the degradation of complementary SiGe HBTs and even engineering future generations with well-matched n-p-n and p-n-p device-level reliability. [ABSTRACT FROM PUBLISHER]

We investigate and compare the hot-carrier degradation of SiGe HBTs under both traditional mixed-mode electrical stress conditions and high-current electrical stress conditions using measured stress data and an in-depth analysis of the underlying degradation mechanisms. While large electric fields are the driving force in mixed-mode hot-carrier degradation, the Auger recombination process is shown to be the hot-carrier source under high-current stress conditions. Auger hot-carrier degradation shows a positive temperature dependence, unlike mixed-mode degradation, due to the temperature dependence of Auger recombination and its energy distribution function. We also use calibrated TCAD simulations to explain an unexpected stress threshold behavior that occurs due to the formation of a potential well in the neutral base region, and to explore a field-compression effect at the collector/subcollector junction that contributes to trap formation at the shallow trench isolation oxide interface. [ABSTRACT FROM PUBLISHER]

This paper uses a physics-based TCAD degradation model to examine the accumulated stress damage of SiGe HBTs under pseudodynamic mixed-mode stress as a function of both electrical stress bias and temperature. The temperature dependence of mixed-mode stress damage is fully explored, beginning with impact-ionization calibration, and then by identifying and calibrating the dependence of scattering length and hydrogen diffusion parameters of the degradation model. After calibrating the model across electrical bias and temperature, the effectiveness and limitations of accumulated stress damage while varying electrical bias and while varying temperature are identified, and the implications of this aging model for circuit designers are discussed. [ABSTRACT FROM PUBLISHER]

Microelectronics applications of scanning capacitance microscopes are reviewed.

Controlling random light is a key enabling technology that pioneered statistical imaging methods like speckle microscopy. Such low-intensity illumination is especially useful for bio-medical applications where photobleaching is crucial. Since the Rayleigh intensity statistics of speckles do not always meet the requirements of applications, considerable effort has been dedicated to tailoring their intensity statistics. A special random light distribution that naturally comes with radically different intensity structures to speckles are caustic networks. Their intensity statistics support low intensities while allowing sample illumination with rare rouge-wave-like intensity spikes. However, the control over such light structures is often very limited, resulting in patterns with inadequate ratios of bright and dark areas. Here, we show how to generate light fields with desired intensity statistics based on caustic networks. We develop an algorithm to calculate initial phase fronts for light fields so that they smoothly evolve into caustic networks with the desired intensity statistics during propagation. In an experimental demonstration, we exemplarily realize various networks with a constant, linearly decreasing and mono-exponential probability density function.