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In the title compound, C16H16BrN, the bromobutyl group lies on one side of the carbazole ring plane and has a zigzag shape. The dihedral angle between the two benzene rings is 0.55°. In the crystal, molecules are connected by van der Waals interactions.

Experiments of a sphere oblique impact with and without an initial spin have been carried out to obtain properties of the impact interface. The contact surface is recorded with a piece of thin carbon paper. The interfacial parameters measured are expressed as axis length, contact area and slip ratio. It is found that for the impact between steels the forward spin can make geometrical sizes of the contact surface increase compared with the case of no initial spin, however, just the reverse for the backward spin. The effect of the initial spin becomes more apparent for the impact with a rubber cushion. Whether the initial spin promotes or hinders the sphere sliding depends on the parameters of tangential velocity and force at the interface. [ABSTRACT FROM AUTHOR]

Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H2O2 solution at 95 °C. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω·mm after annealing at a low-temperature of 575 °C in N2 ambient for 1 min. The TiN gate leakage current is only 10−8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 μm to 0.3 μm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased. [ABSTRACT FROM AUTHOR]