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We report on in-lab free space quantum key distribution (QKD) experiments over 40 cm distance using highly efficient electrically driven quantum dot single-photon sources emitting in the red as well as near-infrared spectral range. In the case of infrared emitting devices, we achieve sifted key rates of 27.2 kbit s-1(35.4 kbit s-1) at a quantum bit error rate (QBER) of 3.9% (3.8%) and a g(2)(0) value of 0.35 (0.49) at moderate (high) excitation. The red emitting diodes generate sifted keys at a rate of 95.0 kbit s-1 at a QBER of 4.1% and a g(2)(0) value of 0.49. This first successful proof of principle QKD experiment based on electrically operated semiconductor single-photon sources can be considered as a major step toward practical and efficient quantum cryptography scenarios. [ABSTRACT FROM AUTHOR]

We present a method to reduce the intrinsically high InP quantum dot density embedded in a Ga0.51In0.49P barrier by introducing an InGaAs quantum dot seed layer. The additional strain reduces the total InP quantum dot density by around one order of magnitude from 2×1010 to 3×109 cm-2 but only ∼1% of the InP nanostructures seem to be optically active (107 cm-2). Therefore, microphotoluminescence measurements could be accomplished without masks. We found resolution-limited photoluminescence linewidths (ΔE<100 μeV), good signal-to-noise ratios (∼65), single-photon emission behavior [g(2)(τ=0)=0.3], and excitonic decay times of typically between 1 and 2 ns. Furthermore the structural quantum dot properties were investigated. [ABSTRACT FROM AUTHOR]

We demonstrate electrically pumped laser light emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in a microcavity mesa realized by monolithically grown high-reflectivity AlGaAs distributed Bragg reflectors. We used common semiconductor laser processing steps to fabricate stand-alone index-guided vertical-cavity surface-emitting lasers with oxide apertures for optical wave-guiding and electrical current constriction. Ultra-low threshold of around 10 A/cm2 and room temperature lasing were demonstrated. Additionally, the temperature independence of the threshold current, which was predicted in theory for quantum dot lasers, is displayed. [ABSTRACT FROM AUTHOR]

Using micro-photoluminescence, we demonstrate single-photon emission in the visible (red) spectral range using self-assembled InP quantum dots embedded in a planar microcavity realized by monolithically grown high reflectivity AlGaAs distributed Bragg reflectors. A full width at half maximum of 130 μeV at 5 K was observed from a single quantum dot coupled to the fundamental cavity resonance. Photon correlation measurements performed under continuous wave excitation show a clear antibunching behavior [g(2)(0)=0.13] as expected for a single-photon emitter. Saturation count rates up to 1.5 MHz (8.1 MHz into the first lens, with an extraction efficiency of 4.1%) were observed. [ABSTRACT FROM AUTHOR]

Within this contribution, results for a laser structure consisting of InP quantum dots embedded in an (AlxGa1-x)0.51In0.49P matrix lattice matched to GaAs are presented. The structure was fabricated using metal–organic vapor-phase epitaxy, showing electrically pulsed laser operation at room temperature with a low threshold current density of 870 A/cm2 and a lasing wavelength of 638 nm for a 2000 µm long device with uncoated facets. Optical output powers of more than 55 mW per facet and lasing up to 313 K is demonstrated. [ABSTRACT FROM AUTHOR]

We demonstrate ultra-sensitive chemical sensing in the mid-infrared spectral regime with a combination of quantum cascade lasers (QCLs) with GaAs/Al(0.2)Ga(0.8)As strip waveguides fabricated via metal-organic vapor-phase epitaxy (MOVPE) and reactive ion etching (RIE) using evanescent field absorption spectroscopy. These strip waveguides have been designed with a width of 200 μm, thereby facilitating 2-D confinement and mode-matched propagation of mid-infrared radiation emitted from a distributed feedback (DFB) QCL at a wavelength of 10.3 μm. Acetic anhydride was detected with a limit of detection (LOD) of 18 pL (19.4 ng) deposited at the waveguide surface by overlapping of the vibrational absorption of the methyl group with the emission frequency of the QCL. The obtained results indicate a remarkable enhancement in sensitivity by three orders of magnitude compared to previously reported multimode planar silver halide waveguides. Further reduction of the waveguide strip width to 50 μm resulted in an additional sensitivity enhancement yielding a calculated LOD of 0.05 pL for the exemplary analyte acetic anhydride, which is among the most sensitive evanescent field absorption measurements with a miniaturized mid-infrared sensor system reported to date.

Using focused ion beam etching techniques, micropillar cavities were fabricated from a high reflective AlAs/AlGaAs distributed Bragg reflector planar cavity containing self-assembled InP quantum dots in (Al(0.20)Ga(0.80))(0.51)In(0.49)P barrier layers. The mode spectra of pillars with different diameters were investigated using micro-photoluminescence, showing excellent agreement with theory. Quality factors of the pillar cavities up to 3650 were observed. Furthermore, for a microcavity pillar with 1.26 mum diameter, single-photon emission is demonstrated by performing photon correlation measurements under pulsed excitation.

Low density (approximately 10(7) cm(-2)), small sized InGaAs quantum dots were grown on a GaAs substrate by metal-organic vapor-phase epitaxy and a special annealing technique. The structural quantum dot properties and the influence of the annealing technique was investigated by atomic force microscope measurements. High-resolution micro-photoluminescence spectra reveal narrow photoluminescence lines, with linewidths down to 11 microeV and fine structure splittings of 25 microeV. High signal to noise ratios (approximately 140) and a nearly background free autocorrelation measurement indicate an excellent optical quality and single photon emission behavior. Furthermore, time resolved measurements reveal excitonic decay times typically in the range between 800 and 2300 ps and biexcitonic decay times around 300 ps.