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This research article examines a L‐shaped dielectrically modulated label free TFET (L‐DM‐TFET) biosensor for the purpose of detecting different biomolecules using a label‐free biosensing detection technique. The proposed structure allows for the recognition of biomolecules by modulating various electrical properties, such as the drain current, transconductance, and linearity parameters. The source region of the proposed TFET incorporates a SiGe (source)/Si (channel) heterojunction, utilizing a low bandgap material of SiGe. This heterojunction is employed to enhance the ON‐state current of the devices. The materials used and the fabrication steps involved in our proposed device are compatible with complementary metal‐oxide‐semiconductor (CMOS) technology. This analysis is conducted using a calibrated Silvaco technology computer‐aided design (TCAD) simulator. Additionally, by considering a dielectric constant range of 1–12, we calculate various figure of merits (FOMs) parameters for the device. These include evaluation of linearity, sensitivity, and noise characteristics. Furthermore, we have conducted an analysis of linearity FOMs, such as VIP2, VIP3, IIP3, and IMD3 for the proposed device under study. Additionally, the linearity analysis of the presented tunneling FET (TFET) indicates the device's excellent performance in distortionless switching operations. Consequently, the L‐shaped dielectrically modulated biosensor holds potential suitability for high‐speed circuit designs. [ABSTRACT FROM AUTHOR]

This work substantiates the impact of Gaussian doping on the electrical performance of double gate junctionless field-effect transistor (DG-JLFET). To get a better understanding of the influence of non-uniform doping, the device is compared with uniform-doped DG-JLFET with various concentrations. The device is later used to demonstrate its usability in six-transistor static random access memory (6T SRAM) bitcell by studying the performance metrics, i.e. stability noise margin and write delay. A comparison of performance metrics is also given with uniformly doped DG-JLFET-based-6T SRAM. Improvement in static noise margin was observed with Gaussian doping without compromising with write access time. [ABSTRACT FROM AUTHOR]

Aircraft/traffic alert and collision avoidance system (ACAS/TCAS) is an airborne system which is designed to provide the service as a last defense equipment for avoiding mid-air collisions between the aircraft. In the existing system, four monopole stub-elements are used as ACAS directional antenna and one blade type element is used as ACAS omnidirectional antenna. The existing ACAS antenna has some drawbacks such as low gain, large beamwidth, frequency and beam tuning/scanning issues etc. Antenna issues like unwanted signals reception may create difficulties to identify the possible threats. In this paper, the focus is on the design and development of a unit element microstrip antenna which can be used for ACAS application and to overcome the possible limitations associated with the existing techniques. Two proposed antenna models are presented here, which are single feed and dual feed microstrip dual patch slotted antenna. These are designed and simulated in CST Microwave Studio tool. The performance and other antenna characteristics have been explored from the simulation results followed by the antenna fabrication and measurement. A good reflection coefficient, Voltage Standing Wave Ratio (VSWR), narrow beamwidth, perfect directional radiation pattern, high gain and directivity make this proposed antenna a good candidate for this application. [ABSTRACT FROM AUTHOR]

In this paper, we systematically examined the impact of fin height ( H\mathrm{ Fin} ) and fin angle ( \theta \mathrm{ Fin} ) on the ac performance parameters including total gate capacitance ( C\mathrm{ gg} ), RC delay ( C_{\mathrm{ gg}}V_{\mathrm{ DD}}/I_{\mathrm{\scriptscriptstyle ON}} ), cutoff frequency ( f_{T} ), energy ( E ), total power ( P_{\mathrm{ Total}} ), and leakage power ( P_{\mathrm{ Leakage}} ) of hybrid FinFETs at the supply voltage, V\mathrm{ DD} with on-current I\mathrm{\scriptscriptstyle ON} . The RC delay, energy, and total power consumption are the primary factors limiting the operating frequency of the high-performance devices. Therefore, these electrical parameters are needed to be addressed in the architectural level of the fin based devices. In this paper, a calibrated numerical device simulation tool is used to achieve the best device performances of 14-nm hybrid FinFETs. From the simulated current–voltage ( I – V ) and capacitance–voltage ( C – C\mathrm{ gg}V\mathrm{ DD}/I\mathrm{\scriptscriptstyle ON} , fT , CV2, P\mathrm{ Total} , and P\mathrm{ Leakage} are extracted to analyze the effect of H\mathrm{ Fin} and \theta \mathrm{ Fin} on the performance matrices of these devices. In addition, this paper proposes an optimum structural configuration for 14-nm hybrid FinFET architecture for digital application perspective. [ABSTRACT FROM AUTHOR]

In recent years, wavelet packet (WP) transform has been used as an important speech representation tool. WP‐based acoustic features have found to be more effective than the short‐time Fourier transform (STFT)‐based features to capture the information of unvoiced phoneme in continuous speech. However, wavelet features fail to carry the same usefulness to represent the voiced phonemes such as vowels, nasals. This paper proposes new WP sub‐band‐based features by taking care of harmonic information of voiced speech signal. It has been noted that most of the voiced energy of the speech signal lies in between 250 and 2000 Hz. Thus, the proposed technique emphasises the individual sub‐band harmonic energy up to 2 kHz. The speech signal is decomposed into 16 wavelet sub‐bands and harmonic energy features are combined with WP cepstral (WPCC) features to enhance the performance of voiced phoneme recogniser. A standard phonetically balanced Hindi database is taken to analyse the performance of the proposed feature set. The noisy phoneme recognition task is also carried out to study the robustness. Significant improvement is obtained with the proposed feature set in voiced phoneme recognition over WPCC and conventional Mel frequency cepstral coefficient. [ABSTRACT FROM AUTHOR]

A novel compact triband coplanar waveguide fed metamaterial antenna is proposed. The left-handed (LH) inductance is provided by two parallel short ended spiral inductors. We achieved pentamodes of resonance consisting of negative modes, zeroth mode and positive modes. The resonance frequency at each of these modes are f-2=1.01 GHz, f-1=2.11GHz, f0=2.48 GHz, f+1= 3.04 GHz and f+2=3.54GHz with triband functionality obtained at f-2, f0 and f+2 resonances. Gain of the proposed structure at f-2 f0 and f+2 resonances is found to be -3.4993dB, 1.559dB and 1.9515dB respectively. The proposed antenna is measured at Antenna Measurement Facility (AMF) and results were compared with the simulated results. A good agreement between the measured and the simulated results validates the proposed design. The antenna radiates omni-directional waves in the horizontal plane. The proposed antenna serves the criteria for modern multiband wireless applications with an additional feature of increased bandwidth at the zeroth mode. The proposed multiband antenna is suitable for wireless communication applications such as the Global System for Mobile Communications (GSM) 900 in 1.01GHz, Wireless Local Area Network (WLAN) in the 2.48 GHz band (2.459 - 2.4924)GHz of IEEE 802.1 lb/g ISM band and worldwide interoperability for microwave access (WiMax) standards in the 3.54GHz band (3.491-3.596)GHz of IEEE 802.11a. This proposed antenna is most suitable for precise multiband wireless communication systems which include the mobile and wireless local area network (WLAN) systems due to their large service area. [ABSTRACT FROM AUTHOR]