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Looking back at seven decades of highly extensive application in the semiconductor industry, silicon and its native oxide SiO2 are still at the heart of several technological developments. Recently, the fabrication of ultra-thin oxide layers has become essential for keeping up with trends in the down-scaling of nanoelectronic devices and for the realization of novel device technologies. With this comes a need for better understanding of the atomic configuration at the Si/SiO2 interface. Classical force fields offer flexible application and relatively low computational costs, however, suffer from limited accuracy. Ab initio methods give much better results but are extremely costly. Machine learning force fields (MLFF) offer the possibility to combine the benefits of both worlds. We train a MLFF for the simulation of the dry thermal oxidation process of a Si substrate. The training data are generated by density functional theory calculations. The obtained structures are in line with ab initio simulations and with experimental observations. Compared to a classical force field, the most recent reactive force field, the resulting configurations are vastly improved. Our potential is publicly available in an open-access repository. [ABSTRACT FROM AUTHOR]

Two-photon absorption in indirect gap semiconductors is a frequently encountered, but not well-understood phenomenon. To address this, the real-density matrix approach is applied to describe two-photon absorption in silicon through the excitonic response to the interacting fields. This approach produces an analytical expression for the dispersion of the two-photon absorption coefficient for indirect-gap materials and can be used to explain trends in reported experimental data for bulk silicon both old and new with minimal fitting. [ABSTRACT FROM AUTHOR]

Electrical properties of defects produced in strongly bismuth-doped silicon by 15 MeV protons are investigated in detail. Electrical measurements on irradiated samples by means of the van der Pauw technique are conducted over a wide temperature range of 20–300 K to furnish information on radiation-produced complexes. It is shown that the properties of the dominant bismuth-related defects are the same as earlier found in the electron-irradiated material. These complexes are tentatively identified as bismuth–vacancy pairs being deep donors. Their atomic configuration appears to be radically different from what is known about similar vacancy-related defects with other group-V impurities. These bismuth-related pairs are stable up to T ≈ 300 °C. Some special features of defect formation and annealing processes of radiation defects in bismuth-doped silicon subjected to electron and proton irradiation are discussed. This information may be of advantage in modeling impurity-related complexes containing oversized impurity atoms in silicon. [ABSTRACT FROM AUTHOR]

Atomistic simulations often rely on interatomic potentials to access greater time and length scales than those accessible to first-principles methods, such as density functional theory. However, since a parameterized potential typically cannot reproduce the true potential energy surface of a given system, we should expect a decrease in accuracy and increase in error in quantities of interest calculated from these simulations. Quantifying the uncertainty on the outputs of atomistic simulations is thus an important, necessary step so that there is confidence in the results and available metrics to explore improvements in said simulations. Here, we address this research question by forming ensembles of atomic cluster expansion potentials, and using conformal prediction with ab initio training data to provide meaningful, calibrated error bars on several quantities of interest for silicon: the bulk modulus, elastic constants, relaxed vacancy formation energy, and the vacancy migration barrier. We evaluate the effects on uncertainty bounds using a range of different potentials and training sets. [ABSTRACT FROM AUTHOR]

Silicon, renowned for its remarkable energy density, has emerged as a focal point in the pursuit of high-energy storage solutions for the next generation. Nevertheless, silicon electrodes are known to undergo significant volume expansion during the insertion of lithium ions, leading to structural deformation and the development of internal stresses, and causing a rapid decline in battery capacity and overall lifespan. To gain deeper insights into the intricacies of charge rate effects, this study employs a combination of in situ measurements and computational modeling to elucidate the cyclic performance of composite silicon electrodes. The findings derived from the established model and curvature measurement system unveil the substantial alterations in stress and deformation as a consequence of varying charge rates. Notably, the active layer experiences compressive forces that diminish as the charge rate decreases. At a charge rate of 0.2, the active layer endures a maximum stress of 89.145 MPa, providing a comprehensive explanation for the observed deterioration in cycling performance at higher charge rates. This study not only establishes a fundamental basis for subsequent stress analyses of silicon electrodes but also lays a solid foundation for further exploration of the impact of charge rates on composite silicon electrodes. [ABSTRACT FROM AUTHOR]

Conductive-bridge random access memory can be used as a physical reservoir for temporal learning in reservoir computing owing to its volatile nature. Herein, a scaled Cu/HfOx/n+-Si memristor was fabricated and characterized for reservoir computing. The scaled, silicon nanofin bottom electrode formation is verified by scanning electron and transmission electron microscopy. The scaled device shows better cycle-to-cycle switching variability characteristics compared with those of large-sized cells. In addition, synaptic characteristics such as conductance changes due to pulses, paired-pulse facilitation, and excitatory postsynaptic currents are confirmed in the scaled memristor. High-pattern accuracy is demonstrated by deep neural networks applied in neuromorphic systems in conjunction with the use of the Modified National Institute of Standards and Technology database. Furthermore, a reservoir computing system is introduced with six different states attained by adjusting the amplitude of the input pulse. Finally, high-performance and efficient volatile reservoir computing in the scaled device is demonstrated by conductance control and system-level reservoir computing simulations. [ABSTRACT FROM AUTHOR]

The effects of carbon in heavily phosphorus-doped Czochralski (HP-Cz) silicon (Si) substrates, with the concentrations across an order of magnitude from 1016 to 1017 cm−3, on the out-diffusion of phosphorus impurities within n/n+ epitaxial Si (Epi-Si) wafers have been investigated. It is found that the increase in the carbon concentration ([C]) from 1.0 × 1016 to 1.0 × 1017 cm−3 leads to the enhanced phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1100 °C in an N2 or an O2 ambient or to anneal at 1150 °C in an N2 ambient, but hardly affects the phosphorus out-diffusion within the n/n+ Epi-Si wafer when subjected to anneal at 1150 °C in an O2 ambient. Based on the density functional theory calculations, it is derived that the increase in the [C] from 1.0 × 1016 to 1.0 × 1017 cm−3 in the HP-Cz Si substrate results in a significantly increased thermal equilibrium concentration of self-interstitial silicon (SiI) atoms at 1100 or 1150 °C, which, in turn, leads to the increased concentration of the SiI atoms that out-diffuse from the substrate to the epitaxial layer because the SiI atoms diffuse extremely fast in Si. Such a carbon-induced increase in the concentration of SiI atoms is believed to be responsible for the aforementioned enhanced phosphorus out-diffusion, which is predominantly dictated by the interstitialcy mechanism. In the case of anneal in the O2 ambient at sufficiently high temperatures such as 1150 °C, a large number of excessive SiI atoms injected into the Epi-Si wafer substantially mask the carbon enhancement effect on the phosphorus out-diffusion. Of technological significance, it is deduced that the [C] should be not higher than 1.0 × 1016 cm−3 in the HP-Cz Si wafers as the substrates of n/n+ Epi-Si wafers used for power devices. [ABSTRACT FROM AUTHOR]

The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development of quantum optical devices. Improving techniques for creating and optimizing these defects remains a major focus. This work presents a comprehensive analysis of a photoluminescence line at a wavelength of 1240 nm (1 eV) caused by defects arising from the ion irradiation of the SiO2/Si system and subsequent thermal annealing. It is assumed that this emission is due to the formation of defect complexes WM with trigonal symmetry similar to the well-known W-centers. A distinctive feature of these defects is their thermal resistance up to temperatures of 800 °C and less pronounced temperature quenching compared to the W-line. The difference in the properties of these defect centers and W-centers can be explained by their different defect environments, resulting from the larger spatial separation between vacancies and interstitial atoms diffusing from the irradiated layer. This, in turn, is associated with the difference in the distribution of primary radiation defects during irradiation of the SiO2/Si system and silicon not covered with a SiO2 film. The patterns of changes in the WM line depending on various factors, such as the thickness of the SiO2 film, type of conductivity and impurity concentration in the original silicon, irradiation parameters, and annealing regimes, is studied and explained in detail. These findings demonstrate the benefits of this new approach when compared to previous methods. [ABSTRACT FROM AUTHOR]

We propose a main mechanism of large valley splitting experimentally observed at the interface of buried oxide (BOX)/silicon-on-insulator (SOI) structures. Silicon metal-oxide-semiconductor field effect transistors fabricated on a SIMOX (001) substrate, which is a kind of the SOI substrate, that is annealed at high temperatures for a long time are known to exhibit large valley splitting, but the origin of this splitting has long been unknown. Extended zone effective-mass approximation predicts that strain significantly affects valley splitting. In this study, we analyzed valley splitting based on this theory and found that the shear strain along [110] of approximately 5% near the BOX interface is a promising source for large valley splitting. [ABSTRACT FROM AUTHOR]

A comprehensive quantitative root cause study of defect evolution leading to memory window closure from a charge balance and charge trapping perspective throughout all phases of a Si channel Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect-transistor (FEFET) is reported. Starting with the first write pulse, an excessive SiO2 interlayer field is revealed that triggers the creation of defect levels Dit in excess of 1015 cm−2 eV−1 at the HZO–SiO2 interface screening ferroelectric (FE) polarization while enabling FE switching. Under subsequent early bipolar fatigue cycling (up to 104 cycles), defect creation commences at the SiO2–Si interface due to the high injected hole fluence (0.39 C/m2) during each stress pulse causing negative bias instability (NBI), which shifts the threshold voltage of the erase state VT,ERS by −0.3 V with accrual of permanently captured charge Nit of up to +5 × 10−3 C/m2 (3 × 1012 cm−2). Subsequently, Nit NBI generation at the SiO2–Si interface accelerates reaching levels of +7 × 10−2 C/m2, locking both FEFET program and erase drain current vs gate–source-voltage (ID–VGS) characteristics in the FEFET on-state inducing memory window closure at 105 cycles while FE switching (switched polarization Psw = 0.34 C/m2) remains essentially intact. These findings guide the down-selection toward suitable semiconductor/FE systems for charge balanced, reliable, and high endurance FEFETs. [ABSTRACT FROM AUTHOR]

In this work, we present a comprehensive re-evaluation of the iron–gallium (FeGa) recombination parameters in silicon using injection-dependent lifetime spectroscopy (IDLS). Ga-doped silicon wafers (of varying resistivities) with precise concentrations of intentional iron contamination in the silicon wafer bulk, through ion implantation and distribution, were used. The presence of interstitial Fei and FeGa, and their lifetime-limiting effects in these silicon wafers, were confirmed through measuring the effective minority carrier lifetime changes during the conditions that are known to cause FeGa dissociation and association. The presence of Fe was also confirmed by deep-level transient spectroscopy. To ensure accurate IDLS analysis of the FeGa defect in silicon, a lifetime linearization scheme was employed to effectively filter out interference by other defects. Error analysis was employed to find the combination of defect parameters that best fit the experimental data and to ascertain the range of uncertainty associated with the IDLS best-fit results. The optimal fitting of the experimental IDLS by Shockley–Read–Hall statistics produced an electron capture cross section σ n = 2.3 × 10 − 14 c m 2 , hole capture cross section σ p = 1.1 × 10 − 14 c m 2 , and a trap energy level E t = E V + 0.2 − 0.01 + 0.02 eV for the FeGa defect in silicon. The extracted defect parameters are also verified by experimentally measuring the crossover point of Fei and FeGa lifetime curves. [ABSTRACT FROM AUTHOR]

Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich surface layers were identified and a wet etch process was developed to remove them. Resistivity and Hall effect measurements were performed at various stages of device processing. The underlying gold-hyperdoped silicon was found to be semi-insulating, regardless of whether the surface gold was removed by etching or not. We propose a Fermi level pinning model to describe the band bending of the transformed surface layer and propose a promising device architecture for efficient Au-hyperdoped Si photodetectors. [ABSTRACT FROM AUTHOR]

Modulation doping of silicon has great potential for miniaturization, surface passivation, and third generation photovoltaics (PV). At a modulation-doped silicon surface, we observe the formation of a 2D hole layer at the silicon surface at low temperatures by means of photoluminescence (PL) measurements. A line shape analysis of band–band and hot luminescence reveals the hole density (which is equal to the modulation-doped acceptor density). A high excitation intensity leads to a Fermi edge singularity of the band–band and hot PL emission. While the 2D layer can be characterized by the observed luminescence, the spectral region of twice the bandgap is fully dominated by emission from this surface layer, impeding the measurement of bulk hot luminescence, e.g., from Auger electrons or from nonthermalized carriers in a hot carrier PV device. [ABSTRACT FROM AUTHOR]

Excess minority carriers create boron-related recombination centers that degrade the efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced reactions among the radiation-induced defects are poorly understood for devices exposed to particle radiation. This study investigates the structure, electronic properties, formation and annihilation mechanisms, and diffusion dynamics of the carrier-induced defects in particle-irradiated boron-doped silicon using density-functional modeling and junction spectroscopy. By revisiting the ground-state structures of the boron-di-interstitial clusters (B I 2), we find that the calculated acceptor and donor levels of such defects agree well quantitatively with the carrier-induced deep-level transient spectroscopy (DLTS) hole emission signatures at 0.43 and 0.53 eV above the valence band edge (E v), respectively. We also find that the formation of B I 2 is thermally activated by an energy of 0.50 eV, which we explain theoretically by the reduction of the migration barrier of mono-interstitials to 0.53 eV in the presence of excess minority carriers. Moreover, we discover that the B I 2 are potentially mobile with a migration barrier of 1.18 eV, contrary to the present understanding. [ABSTRACT FROM AUTHOR]

Recently, Chiloyan et al. [Appl. Phys. Lett. 116, 163102 (2020)] have reported that phonon transport could exceed bulk heat conduction if low-frequency phonons with long mean free path (MFP) remain in the nonthermal regime in silicon. To gain a better understanding of their findings, we investigated the effects of temperature-induced anharmonicity on both Landau–Rumer damping and Akhiezer damping, including polarization. To do this, we follow a rigorous procedure for calculating the Akhiezer model and use phonon kinetic theory based on the Boltzmann transport equation. Consequently, we find that in the Akhiezer regime, the longitudinal acoustic phonon modes (LA) are strongly suppressed by phonon anharmonicity compared to the transverse acoustic phonon modes. Therefore, the low-frequency phonons with a long MFP of LA can help to exceed bulk heat conduction if they remain in the regime of nonthermal phonon transport where there are no appreciable scatterings with other phonons. It is also shown that Akhiezer damping eliminates thermal conductivity by 16.8% at 500 K, which is higher than the observed reduction (12.6%) at 300 K in silicon, uncovering a novel regime where the Akhiezer damping, previously deemed insignificant in the thermal conduction of bulk silicon, becomes crucial. [ABSTRACT FROM AUTHOR]

Precise and reproducible current generation is the key to realizing quantum current standards in metrology. A promising candidate is a tunable-barrier single-charge pump, which can accurately transfer single charges one by one with an error rate below the ppm level. Although several measurements have shown such levels of accuracy, it is necessary to further pursue the possibility of high-precision operation toward reproducible generation of the pumping current in many devices. Here, we investigated silicon single-hole pumps, which may have the potential to outperform single-electron pumps because of the heavy effective mass of holes. Measurements on the temperature dependence of the current generated by the single-hole pump revealed that the tunnel barrier had high energy selectivity, which is a critical parameter for high-accuracy operation. In addition, we applied the dynamic gate-compensation technique to the single-hole pump and confirmed that it yielded a further performance improvement. Finally, we demonstrated gigahertz operation of a single-hole pump in which the estimated lower bound of the pump error rate was around 0.01 ppm. These results imply that single-hole pumps in silicon are capable of high-accuracy, high-speed, and stable single-charge pumping in metrological and quantum-device applications. [ABSTRACT FROM AUTHOR]

Spin qubit systems are one of the promising candidates for quantum computing. The quantum dot (QD) arrays are intensively investigated by many researchers. Because the energy-difference between the up-spin and down-spin states is very small, the detection of the qubit state is of prime importance in this field. Moreover, many wires are required to control qubit systems. Therefore, the integration of qubits and wires is also an important issue. In this study, the measurement process of QD arrays is theoretically investigated using resonant tunneling, controlled by a conventional transistor. It is shown that the number of possible measurements during coherence time can exceed a hundred under the backaction of the measurements owing to the nonlinear characteristics of resonant tunneling. It is also discussed to read out the measurement results by the conventional transistor. [ABSTRACT FROM AUTHOR]

Abstract: Optically active quantum defects play an important role in quantum sensing, computing and communication. The electronic structure and the single-particle energy levels of these quantum defects in the semiconducting host have been used to understand their optoelectronic properties. Optical excitations that are central for their initialization and readout are linked to transitions between occupied and unoccupied single-particle states. It is commonly assumed that only quantum defects introducing levels well within the band gap and far from the band edges are of interest for quantum technologies as they mimic an isolated atom embedded in the host. In this perspective, we contradict this common assumption and show that optically active defects with energy levels close to the band edges can display similar properties. We highlight quantum defects that are excited through transitions to or from a band-like level (bound exciton) such as the T center and Se S i + in silicon. We also present how defects such as the silicon split-vacancy in diamond can involve transitions between localized levels that are above the conduction band or below the valence band. Loosening the commonly assumed requirement on the electronic structure of quantum defects offers opportunities in quantum defects design and discovery especially in smaller band gap hosts such as silicon. We discuss the challenges in terms of operating temperature for photoluminescence or radiative lifetime in this regime. We also highlight how these alternative type of defects bring their own needs in terms of theoretical developments and fundamental understanding. This perspective clarifies the electronic structure requirement for quantum defects and will facilitate the identification and design of new color centers for quantum applications especially driven by first principles computations.

Heavily phosphorus-doped Czochralski (HP-CZ) silicon is an important substrate material for manufacturing power electronic devices. The high concentration of phosphorus impurities may be supersaturated during the crystal growth of HP-CZ silicon or device manufacturing. Thus, understanding phosphorus precipitation in HP-CZ silicon is of technological significance. Herein, a panoramic view of phosphorus precipitation in HP-CZ silicon is presented in terms of crystallography, thermodynamics, and kinetics. It is found that the orthorhombic SiP precipitates can form during the crystal growth of HP-CZ silicon and also during the post-anneals of HP-CZ silicon at 450–1050 °C. Along with increasing annealing temperature, the formed SiP precipitates tend to adopt the platelet, polyhedron, and sphere-like shapes. Moreover, the excess point defects, i.e., silicon self-interstitials and vacancies, are found to affect phosphorus precipitation occurring in the low and high temperature regimes in different ways. In light of the kinetics of phosphorus precipitation at different temperatures, it is deduced that phosphorus precipitation follows a growth law in compliant with Ham's theory to a large extent. As an important output of this work, the temperature-dependent phosphorus solubilities in the dislocation-free silicon, which have been hardly acquired previously, are derived on the basis of investigating phosphorus precipitation in a set of HP-CZ silicon wafers with different phosphorus concentrations. Moreover, the derived solvus line for the phosphorus impurities in silicon could be a beneficial supplement to the existing phase diagram of the Si–P binary system in the extremely silicon-rich corner. [ABSTRACT FROM AUTHOR]

In an optically excited semiconductor micromechanical structure, photogenerated carriers (plasma waves) can produce elastic deformations (local strains and stresses)–plasmaelastic (PE) deformations. On the other hand, the generation of excess carriers will produce heat due to carrier thermalization and recombination processes. The generated heat can produce other elastic deformations–thermoelastic (TE) deformations. For these two components of elastic deformation, it is possible to consider two types of elastic displacements (two mods of elastic vibrations): elastic expanding and elastic bending. A theoretical model of the photoacoustic (PA) signal for optically excited Si membranes is given, which includes thermal diffusion (TD), TE, and PE mechanisms, in order to study elastic expansion and bending. The relations for the PA amplitude and the phase of elastic expanding and bending in the excited membrane are derived. Analysis of the PA signal indicates that the TD component is dominant for all thicknesses and practically the entire range of observed frequencies. The calculated PA amplitude and phase spectra show that the PA elastic expanding component has a significant influence on the total PA signal at low frequencies. On the other side, the calculated PA spectra show that the PA elastic bending component has a significant influence on the total PA signal at high frequencies. Experimental PA signals of Si membranes were measured using the sample-gas-microphone detection technique with a transmission configuration in relation to the modulation frequency of the optical excitation for different membrane thicknesses. The experimental PA spectra were compared with the theoretical ones. [ABSTRACT FROM AUTHOR]

The sensitivity and responsiveness of living cells to environmental changes are enabled by dynamic protein structures, inspiring efforts to construct artificial supramolecular protein assemblies. However, despite their sophisticated structures, designed protein assemblies have yet to be incorporated into macroscale devices for real-life applications. We report a 2D crystalline protein assembly of C98/E57/E66L-rhamnulose-1-phosphate aldolase (CEERhuA) that selectively blocks or passes molecular species when exposed to a chemical trigger. CEERhuA crystals are engineered via cobalt(II) coordination bonds to undergo a coherent conformational change from a closed state (pore dimensions

An enantio‐ and regioconvergent allylation of phenols under nickel catalysis with an α‐/γ‐regioisomeric mixture of racemic silylated/germylated allylic chlorides is reported. The silyl/germyl group governs the regioselectivity, and the transformation affords enantiomerically enriched unsymmetrical 1,3‐disubstituted allyl aryl ethers with excellent regiocontrol in good yields and excellent enantioselectivities. Notably, no nickel‐mediated C−O bond activation is observed at room temperature. The synthetic value of these densely functionalized silicon‐containing building blocks is demonstrated in a series of chemoselective transformations, including a [3,3]‐sigmatropic rearrangement for the construction of an α‐chiral silane. [ABSTRACT FROM AUTHOR]

Embedding an anti-reflection layer to reduce light reflection and suppress charge recombination is a key factor in increasing absorption and power conversion efficiency (PCE). Nanostructures are ideal as anti-reflection materials due to their typically superior optical properties. The shape and size of these nanostructures are important, as optimizing them can enhance and regulate light propagation, optical absorption, and light trapping. In this paper, absorption and electrical calculations were performed using Finite-Difference Time-Domain (FDTD) and CHARGE simulations. We demonstrate the effectiveness of optimizing the shape (nanodisk, sphere, and hemisphere), aspect ratio, diameter, lattice constant, and thickness of the nanostructure. These modifications significantly improved the performance of silicon solar cells, resulting in a PCE increase by 15.27%. The optimal PCE was obtained from modifying anti-reflection using a nanodisk structure with a diameter of 300 nm, a lattice constant of 600 nm, and a thickness of 187.5 nm. The high performance is demonstrated in both optical and electrical properties, with an absorption intensity of 97% and Jsc of 49.77 mA/cm2. These superior results suggest that the proposed TiO2 nanodisk-based silicon solar cells have great potential to enhance silicon solar cell performance. [ABSTRACT FROM AUTHOR]

Cell wall structure/composition differences between dicots and Poales may affect their responses to metals and Silicon. Impacts of excess Fe, Zn and their interactions with Si on phenolics/lignin metabolism of monocot and dicot roots were investigated. Monocot (rice and wheat) and dicot (canola and cotton) plants were exposed to excess Fe (150 mg L−1) or excess Zn (150 µg L−1) with or without Si (1.5 mM) and assessed for growth and phenol/lignin metabolism in root apical (AP) and basal parts (BP). Excess Fe compromised plant biomass, but Si improved it. Excess Zn provoked similar responses except in canola. In the monocot root AP, excess Fe increased phenylalanine ammonia lyase (PAL), cell wall peroxidase (POD) and polyphenol oxidase (PPO) activities. Phenolics accumulated mostly in monocots roots under excess Fe whereas lignin accumulated in nearly all roots and similar but weaker effects observed under excess Zn. Under excess Fe, Si stimulated cell wall POD activity and declined phenolics in monocot roots. The corresponding responses were much weaker in dicot roots. FTIR data differentiated altered cell wall functional groups in monocots and dicots after treatments, however, monocots data were more diverse than dicots. Si is more efficient to substitute for lignin metabolism in monocots than in dicots under excess Fe. Response of phenolic/lignin metabolism to heavy metal stress and Si depends on both plant and heavy metal species. Si application brings about more changes in the root cell wall of monocots than dicots through modulation of the root cell wall structure and function. [ABSTRACT FROM AUTHOR]

Silicon (Si) is essential to the nutritional status of many monocot and dicot plant species, and it aids them in resisting abiotic and biotic challenges in various ways. This article explained the progress in exploring silicon-mediated resistance to sugarcane insect pests, its role in increasing juice quality attributes and cane production, the silicon status of soil and uptake by sugarcane plant, and the mechanisms involved. The aim is to determine the influence of different sources of Si application on the availability of silicon in soil, silicon uptake by plants, silicon effect in minimizing biotic stresses such as defence against sugarcane insect pest herbivory along with its effect on sugarcane yield in terms of juice and other component traits. There are two basic modes of action: enhanced physical or mechanical barriers and biochemical or molecular mechanisms that activate plant defence responses via bitrophic (plant-herbivore) interactions and tritrophic (plant-herbivore-natural enemy) interactions. By integrating the data reported in this research, a comprehensive understanding of the relationship between various sources of silicon treatments, increased sugarcane plant resistance and decreased sugarcane insect pest damage might be attained. [ABSTRACT FROM AUTHOR]

Compared to the outstanding development in the synthesis of Si−B single bonded species, borylsilanes and their application to organic synthesis, the chemistry of Si=B double bonded species, borasilenes and boratasilenes have only made little progress, first of all, due to the difficulties in accessing such double bonds. Herein we report the synthesis of the first Si=B analogue of a vinyl halide, a bromoboratasilene, via formal borylene insertion to the coordination sphere of a monoatomic Si(0) complex, using a dihaloborane as the borylene source. The treatment of bromoboratasilene toward neutral or anionic Lewis bases gives access to new boratasilenes, all of which were proved to possess significant Si=B double bond character by XRD analysis and DFT calculations. These results demonstrate exciting strategies to synthesize new types of Si=B double bonded species which should further progress the chemistry of boron, silicon‐containing molecules. [ABSTRACT FROM AUTHOR]

Herein, we report the reactivity of N-heterocyclic carbene stabilized silylene-phosphinidene IDippPSi(TMS)2SiTol3 (IDipp = 1,3-bis(2,6-diisopropylphenyl)-imidazolin-2-ylidene) with ammonia, which results in an intermolecular 1,5-hydroamination and dearomatization of the NHC wingtip. DFT calculations reveal an unprecedented mechanism involving ammonia coordination to the silicon center, Meisenheimer-type complex formation, and a proton abstraction by the dearomatized aryl moiety. [ABSTRACT FROM AUTHOR]

Perovskite tandem solar cells on textured silicon hold potential for surpassing single‐junction limits and industrial compatibility. However, integrating hole‐transporting layers (HTLs) onto textured silicon poses challenges in conformal coating, low‐temperature fabrication, and perovskite solution process compatibility. Here, an atomic layer deposition (ALD) copper‐doping process is introduced to fabricate low‐temperature NiOx HTLs (ALD Cu:NiOx), tailored for textured tandems. Copper‐doping reduces hydroxyl group content and Ni3+ defects, addressing the challenge of enhancing hole conductivity while mitigating recombination loss. This advancement enables to lower the post‐annealing temperature from >300 to 200 °C, achieving compatibility with silicon heterojunction (SHJ) cells and boosting the power‐conversion efficiency (PCE) of 1.65‐eV p–i–n perovskite solar cells to 22.47%. Integrating ALD Cu:NiOx beneath conventional self‐assembled monolayer HTL on textured SHJ leads to notable PCE enhancements, from 28.6% to 30.5% for 1‐cm2 tandems (certified stabilized PCE of 30.04%) and from 23.9% to 26.4% for 8.89‐cm2 tandems. Following 1000 h of maximum‐power‐point (MPP) tracking, tandems maintain 95% of initial efficiency. Notably, losses in open‐circuit voltage and PCE due to area upscaling reduced by over 20%, attributed to ALD Cu:NiOx's ability to enhance perovskite film wettability and minimize shunting on silicon pyramid texture, underscoring its impacts for textured tandem upscaling. [ABSTRACT FROM AUTHOR]

Molecular cages that contain silicon are highly versatile and stable materials with great potential for various scientific and technological applications due to their ability to form stable three‐dimensional frameworks. The synthesis of 2,2,3,3,5,5,6,6,7,7,8,8‐dodecamethyl‐2,3,5,6,7,8‐hexasilabicyclo[2.2.2]octane has already been reported and its modifications at the CH moiety have been demonstrated to afford varied functionality. Here, we present the synthesis and characterization of 2,2,3,3‐tetraphenyl‐5,5,6,6,7,7,8,8‐octamethyl‐2,3,5,6,7,8‐hexasilabicyclo[2.2.2]octane, which is a phenyl‐substituted analogue of such a silicon‐containing cage. The Ph‐substituted Si‐containing cage exhibits a low‐lying LUMO due to the hyper‐conjugation including Si−Si, Si−C σ*‐orbitals, and π(phenyl)‐orbitals, which results in a remarkable bathochromic shift in the UV‐vis absorption spectrum. [ABSTRACT FROM AUTHOR]

Doping silicon wafers without using highly toxic or corrosive chemical substances has become a critical issue for semiconductor device manufacturing. In this work, ultra‐thin films of hydroxyapatite (Ca5(PO4)3OH) are prepared by tethering by aggregation and growth (T‐BAG), and further processed by spike annealing. Via in situ infrared (IR), the decomposition of hydroxyapatite and intermixing with the native silicon oxide is observed already at temperatures as low as 200 °C. Phosphate transport through the native silicon oxide is driven by a phase transformation into a more stable thermal oxide. At 700 °C, diffusion of phosphorus into the sub‐surface region of oxide‐free silicon is observed. In situ IR combined with electrical impedance spectroscopy (EIS), time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS), and X‐ray photoelectron spectroscopy (XPS) measurements allows to conclude that the phosphorus is: i) transported through the silicon oxide barrier, ii)) diffused inside the oxide‐free silicon, and iii) finally modified the electrical activity of the silicon wafer. To further explain the experimental findings, density‐functional theory (DFT) is used to demonstrate the extent of the effect of phosphorus doping on the electronic nature of silicon surfaces, showing that even small amounts of doping can have a measurable effect on the electrical performance of semiconductor wafers. [ABSTRACT FROM AUTHOR]

In this work, picosecond laser inscription of segmented waveguides in crystalline silicon based on a deterministic single‐pulse modification process is demonstrated. Pulses of 43 ps duration at 1.55 μm$\umu {\rm m}$ wavelength are used to transversely inscribe periodic structures with a pulse‐to‐pulse pitch of ≈2 μm$\umu {\rm m}$. Infrared shadowgraphy images and Raman spectroscopy measurements indicate that the modifications exhibit a spherical shape. Characterization of waveguide performance at 1.55 μm$\umu {\rm m}$ for various pulse energies and periods is carried out. Direct comparison with numerical simulations confirms the presence of graded index waveguides, encompassing a micrometer core size and a maximum refractive index change of ≈7×10−3$\approx 7\times 10^{-3}$. This short‐pulse inscription approach can pave the way for 3D integrated photonic devices in the bulk of silicon. [ABSTRACT FROM AUTHOR]

We present a method of creating high-density superconducting flexible wiring on flexible thin silicon substrates. The flexible wiring, called SOI flex, is created by depositing superconducting wiring on a silicon-on-insulator (SOI) wafer, selectively etching away the thicker silicon section handle layer, and bending the thinner silicon device layer. We show measurements of superconducting transition temperature and critical current for Mo, Nb, and Al on SOI flex. We discuss the expected advantages of SOI flex for low-temperature detector applications, as well as the role of stress and strain in bent silicon and niobium. [ABSTRACT FROM AUTHOR]

The current manuscript focuses on the photo-thermoelastic interactions in a rotating plate with a porous structure and temperature-dependent properties. The analysis is performed using the dual phase lag theory and by considering a two-dimensional isotropic homogeneous plate. The upper surface of the plate experiences the application of a mechanical source, while the lower surface of the plate is insulated thermally. The application of the normal mode technique enables the derivation of analytical expressions for various field variables such as displacement, stress, change in volume fraction field, carrier density and temperature within the physical domain. Numerical computations are performed for a plate composed of silicon material and the results are represented graphically with the support of MATLAB software to demonstrate the consistency of the obtained results. To outline the influences of rotation, photothermal transport process, temperature-dependent properties and void parameters on the physical fields, certain collations are presented. Some specific cases of interest have also been deducted. [ABSTRACT FROM AUTHOR]

The gradient-distributed binders have better energy dissipation and stress relief capabilities under stress to maintain stability of Si electrode. [Display omitted] Silicon is considered as a promising alternative to traditional graphite anode for lithium-ion batteries. Due to the dramatic volume expansion of silicon anode generated from the insertion of Li+ ions, the binder which can suppress the severe volume change and repeated massive stress impact during cycling is required greatly. Herein, we design a gradient-distributed two-component binder (GE-PAA) to achieve excellent cyclic stability, and reveal the mechanism of high energy dissipative binder stabilized silicon electrodes. The inner layer of the electrode is the polyacrylic acid polymer (PAA) with high Young's modulus, which is used as the skeleton binder to stabilize the silicon particle interface and the electrode structure. The outer layer is the gel electrolyte polymer (GE) with lower Young's modulus, which releases the stress generated during the lithiation and de-lithiation process effectively, achieving the high structural stability at the molecular level and silicon particles. Due to the synergistic effect of the gradient binder design, the silicon electrode retains a reversible capacity of 1557.4 mAh g-1 after 200 cycles at the current density of 0.5 C and 1539.2 mAh g-1 at a high rate of 1.8 C. This work provides a novel binder design strategy for Si anode with long cycle stability. [ABSTRACT FROM AUTHOR]

The paper studies the gettering properties of nickel clusters in the silicon lattice. The gettering properties of nickel clusters were studied in various states, i.e., in original (reference) samples, as well as in samples with additionally doped interstitial and lattice site impurity atoms of sulfur and manganese. The electrophysical and photoelectric parameters were studied using modern instrumentation: INFRAM-I-type infrared microscope, IKS-21 and scanning electron microscope SEM (Oxford Instruments ZEISS EVOMA10), IKS-21. A new technology has also been proposed that makes it possible to getter harmful impurities; it is recommended for widespread use in the electronics industry and scientific research institutes for the production of materials with stable parameters and the development of fundamentally new devices. [ABSTRACT FROM AUTHOR]

Farmed aquaculture species play an important role in regulating nutrient cycles in farming systems. Compared with nitrogen and phosphorus, the role of farmed species in the silicon (Si) cycle remains poorly understood. To help reduce this uncertainty, we clarified the sources and sinks of silicate and quantified the Si pools in an aquaculture system in Sanggou Bay (SGB). The results showed that dissolved inorganic nutrient levels were significantly lower during the dry season than during the wet. Dissolved silicate (DSi) is a potential limiting factor for phytoplankton growth during spring, and phosphorus limitation occurs during summer. The budget results indicated that large amounts of nitrogen, phosphate (DIP), and DSi were buried in the sediment or transformed into other forms during both the wet and dry seasons. The nitrogen and DIP cycles were strongly influenced by bivalve excretion and farmed species harvesting; however, these processes had little impact on the Si cycle. Si availability depends on both external inputs and internal recycling. DSi was primarily supplied from the Yellow Sea, with a minor contribution from the river due to river discharge during spring. However, during summer, riverine inflow (accounting for 83% of the total influx) was the major DSi source followed by benthic flux (12%). Biogenic silica (BSi) burial efficiency in the sediment was estimated to be 78% during spring and 23% during summer. The BSi preservation efficiency in bivalves during spring was high (53%), leading to a higher Si retention than in river discharge. Bivalves biodeposition plays an important role in the Si burial process. We suggest that this high retention is essentially controlled by the biodeposition mechanism, which is directly controlled by the exotic suspension feeders. Bivalves have the potential to alter Si retention in the bay by producing large amounts of biodeposits and accelerating the silica cycle, which may lead to more carbon dioxide being absorbed by diatoms. [ABSTRACT FROM AUTHOR]

The modified Siemens method is the dominant process for the production of polysilicon, yet it is characterised by high energy consumption. Two models of laboratory-grade Siemens reduction furnace and 12 pairs of rods industrial-grade Siemens chemical vapor deposition (CVD) reduction furnace were established, and the effects of factors such as the diameter of silicon rods, the surface temperature of silicon rods, the air inlet velocity and temperature on the heat transfer process inside the reduction furnace were investigated by numerical simulation. The results show that the convective and radiant heat losses in the furnace increased with the diameter of the silicon rods. Furthermore, the radiant heat loss of the inner and outer rings of silicon rods was inconsistent for the industrial-grade reduction furnace. As the surface temperature of the silicon rods increases, the convective heat loss in the furnace increases, while the radiative heat loss remains relatively constant. When the inlet temperature and inlet velocity increase, the convective heat loss decreases, while the radiant heat loss remains relatively constant. Furthermore, the furnace wall surface emissivity increases, resulting in a significant increase in the amount of radiant heat loss in the furnace. In practice, this can be mitigated by polishing or adding coatings to reduce the furnace wall surface emissivity. [ABSTRACT FROM AUTHOR]

This investigation presents the development of third-generation advanced high-strength steels (AHSS) for automotive industries, focusing on materials with higher strength, plasticity, and crashworthiness. Three alloy steels Fe-6Mn-(1, 1.6, 2.0) Si were developed via a melting route using an arc melting furnace followed by homogenization at 1200 °C, hot rolling at 1100 °C, and then air cooling. The developed steels are characterized using FE-SEM, XRD, microhardness tester, and universal testing machine. The FE-SEM micrographs exhibit a complex phase microstructure containing pearlite, retained austenite, martensite, ferrite, and bainite. The microhardness values of novel alloys are measured as 423, 441, and 475 VHN. The tensile strengths of alloys were achieved at 1409 MPa, 1497 MPa, and 1438 MPa with elongations of 18, 15, and 14% respectively. Atom probe tomography results confirmed the presence of retained austenite of film thickness 25–27 nm. The fracture surface of alloy steel containing 1 wt% Si and 6 wt% Mn exhibits dimples, causing ductile fracture, while alloy steel containing 1.6–2.0 wt% Si and 6 wt% Mn combines dimples and facets, confirming intergranular fracture with a 14 % ductility limit. The average dimple size decreases from 0.82 µm to 0.64 µm with an increase in silicon from 1 wt% to 2 wt%. [ABSTRACT FROM AUTHOR]

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A 1,4,2‐diazasilole containing a low‐valent silicon atom has been synthesized employing a bulky imino N‐heterocyclic carbene ligand. This molecular structure is characterized by a mesoionic C2N2Si five‐membered ring, notable for its delocalized π electrons, intrinsic charge‐separated zwitterionic properties, and a distinctly nucleophilic silicon center, culminating in 6π aromaticity. This compound manifests either mesoionic silylene or silylone characteristics upon coordination with transition metals. Demonstrating extraordinary versatility, this compound engages in diverse reactions such as coordination with iron or iridium, oxidation by S8, intramolecular ring saturation under the coordination influence of iridium, silicon atom transfer facilitated by Ph2Se2, ring contraction induced by Ph2Te2, and skeletal rearrangement triggered by Et3N•HCl. These reactions culminate in the formation of a variety of unprecedented silicon‐based heterocycles, which are typically formidable to achieve using conventional methods. This study unveils previously unexplored facets of low‐valent 1,4,2‐diazasilole, positioning it as a promising foundational building block for future innovations in unique silicon compounds. [ABSTRACT FROM AUTHOR]

This paper critically examines the Silicon Shield argument, which suggests that Taiwan's semiconductor industry deters Chinese aggression due to global reliance. The main argument is that this narrative lacks rigorous academic grounding and serves more as a hopeful story than a credible deterrent. By analyzing the concept under the backdrop of grand theories in international relations, the paper addresses a gap in understanding the security implications of Taiwan's semiconductor industry. It concludes that the Silicon Shield is largely a hopeful narrative. This research provides a foundation for further empirical studies and encourages academic discourse on Taiwan’s security dynamics. [ABSTRACT FROM AUTHOR]

Green rusts (GR) are mixed-valence iron (Fe) hydroxides which form in reducing redox environments like riparian and wetland soils and shallow groundwater. In these environments, silicon (Si) can influence Fe oxides' chemical and physical properties but its role in GR formation and subsequent oxidative transformation have not been studied starting at initial nucleation. Green rust sulfate [GR(SO4)] and green rust carbonate [GR(CO3)] were both coprecipitated from salts by base titration in increasing % mol Si (0, 1, 10, and 50). The minerals were characterized before and after rapid (24 h) aqueous air-oxidation by x-ray diffraction (XRD), scanning electron microscopy (SEM), Fe extended x-ray absorption fine structure spectroscopy (EXAFS), and N2-BET surface area. Results showed that only GR(SO4) or GR(CO3) was formed at every tested Si concentration. Increasing % mol Si caused decreased plate size and increased surface area in GR(CO3) but not GR(SO4). GR plate basal thickness was not changed at any condition indicating a lack of Si interlayering. Air oxidation of GR(SO4) at all % mol Si contents transformed by dissolution and reprecipitation into lepidocrocite and goethite, favoring ferrihydrite with higher % Si content. Air oxidation of GR(CO3) transformed into magnetite and goethite but increasing Si caused GR to oxidize while retaining its hexagonal plate structure via solid-state oxidation. Our results indicate that Si has the potential to cause GR to form in smaller particles and upon air oxidation, Si can either stabilize the plate structure or alter transformation to ferrihydrite. [ABSTRACT FROM AUTHOR]

Here, a combination of dopamine self‐polymerization and epoxy modified SiO2 (M‐SiO2) grafting was proposed, with the purpose of increasing interfacial adhesion of UHMWPE fiber. Inspired by mussel adhesion, polydopamine (PDA) was deposited onto the surface of UHMWPE fiber to form a thin layer with amino and hydroxyl groups. M‐SiO2 nanoparticles were then adhered to fiber surface via chemical reactions by a “two‐step” or “one‐step” technology. In the “two‐step” technique, the M‐SiO2 nanoparticles were adhered to the surface of PDA modified UHMWPE fiber via reactions between epoxy and amino groups. In the “one‐step” method, M‐SiO2 and dopamine were added into the UHMWPE/Tris solution at the same time. Surface morphology and thermal properties of various UHMWPE fibers were tested by SEM and TGA, respectively. Surface wettability of different UHMWPE fibers were evaluated by dynamic contact angle. The results proved that PDA and M‐SiO2 were successfully adhered to the surface of UHMWPE fibers. The mechanical property of modified UHMWPE/Epoxy composites was investigated, and 43.7 % improvement was obtained, compared with unmodified UHMWPE/Epoxy composite. Additionally, micro‐bond test revealed that the interfacial property (IFSS value) of modified UHMWPE fiber via the “one‐step” method was 6.08 MPa, significantly higher than that of unmodified UHMWPE fiber (2.47 MPa). [ABSTRACT FROM AUTHOR]

AbstractExcessive boron (B) levels in soil can lead to toxicity in plants, impacting their growth and productivity. Effective strategies to reduce B uptake are important for improving crop performance in contaminated soils. This experiment aimed to investigate the effects of chicken manure incineration ash (CMA) and triple superphosphate (TSP) on B uptake in barley plants grown in B-contaminated soil. Before the experiment, the chemical composition and molecular structure of CMA were analyzed using XRF, XRD and SEM. The soil was contaminated with 15 mg kg−1 of B, and both TSP and CMA were applied at rates of 40, 80, and 160 mg kg−1 of phosphorus (P). Neither P source had a significant impact on plant dry weight. However, increasing doses of applied TSP and CMA increased plant P concentration while significantly decreasing B concentration. Particularly with CMA applied at 160 mg kg−1 P dose, plant B concentration decreased to the lowest level of 194 mg kg−1. Increasing P doses led to a slight decrease in plant silicon (Si) concentration. The pH of soil samples taken after the experiment slightly increased with CMA treatments compared to TSP. The available P concentration in soils increased with increasing P doses. The available B concentration decreased with increasing P doses, especially reducing to the lowest level of 2.52 mg kg−1 in soils with a 40 mg kg−1 P, CMA. In conclusion, in addition to the effect of P, the molecular structure of P is also important in reducing B uptake in barley. [ABSTRACT FROM AUTHOR]

AbstractThe single source precursor tris(N,N,N’,N’-tetramethylethylenediamine)Al(III)Cl3 has been synthesized by the reaction of N,N,N’,N’-tetramethylethylenediamine (TMEDA) with AlCl3 in 3:1 molar ratio in ethanol. The precursor is stable for long periods of time and cleanly generated aluminum nitride upon pyrolysis. The pyrolysis process was optimized by varying parameters such as temperature, pressure, and the flow rate of gases (N2 and Ar). Thin films of AlN were prepared by spin coating the precursor onto Si(100) and quartz substrates followed by pyrolysis under optimized CVD conditions obtained from bulk pyrolysis. Pyrolyzed powders and films were characterized with a variety of techniques. X-ray diffraction (XRD) showed 8.5 nm grain size with a dominant 220 orientation. UV-Vis spectroscopy indicated a band gap for the AlN films of ∼5.7 eV, which is close to bulk AlN (6.1 eV). FESEM showed a smooth and homogeneous film surface and EDAX showed a 1.4:1 ratio of Al:N, respectively. [ABSTRACT FROM AUTHOR]

Developing biodegradable electrodes is a significant step toward environmental sustainability and cost reduction in battery technology. This paper presents a new approach that utilizes metal‐organic framework (MOF)‐encapsulated silicon nanoparticles (SiNPs) as the active anode material within a cellulose‐based electrode. The electrode is free‐standing, flexible, biodegradable, and significantly reduces the strain experienced by SiNPs during volume expansion, resulting in improved capacity and cycle life stability of SiNPs. The high porosity of the electrode creates efficient lithium (Li+) ion transport channels and enhances electrolyte absorption, thus promoting effective contact between the electrolyte and active material. The outcome is rapid electrode kinetics and a highly reversible discharge capacity of 1744.6 mAh g−1 at 0.5 A g−1 versus Li/Li+ over 1000 cycles. Further, full cell tests are conducted that demonstrate a stable cycle performance exceeding 3400 cycles, with an initial discharge capacity retention of 80.5% at 0.5 A g−1. By employing cellulose and avoiding toxic organic solvents and binders, the proposed approach is promising for a substantial reduction of the production costs of Li‐ion batteries. The scalability of the proposed method further enhances its practical viability, offering intriguing economic implications for the future of battery technology. [ABSTRACT FROM AUTHOR]

We report an ultra-shallow p-type doping of silicon resulting from the rapid thermal annealing of thin Al2O3 films deposited on intrinsic silicon with a native SiO2 layer, using a common atomic layer deposition process. Characterization revealed a two-stage decrease in sheet resistance, providing insights into the doping mechanism. [ABSTRACT FROM AUTHOR]

Silicon (Si) application may affect the plant response to nitrogen (N), possibly by changing the uptake, concentration, and partitioning of nutrients in plant tissues; however, this has not yet been proven in Arabica coffee plants. The effects of Si application methods [no Si, soil-applied soluble Si (168 mg Si L−1), and foliar-applied soluble Si (two application of 2 mg Si plant−1)] and N levels (0 and 80 mg N L−1) on biomass production and partitioning and uptake, partitioning, and stoichiometry of nutrients and Si in young Arabica coffee plants grown under greenhouse conditions were evaluated. Nitrogen fertilization increased the biomass production and uptake of all nutrients; however, reduced the concentrations of K, Ca, Mg, S, Mn, and Si in the leaves, Si in the stems, and K, Mg, and S in the roots of coffee plants as a dilution effect. In the presence of N, soil-applied Si increased the concentrations of Zn in the leaves and Ca and Si in the stems, the uptake of K, S, and Si, and the Si:N ratio. Foliar-applied Si increased the concentrations of N, P, K, and Zn in the leaves and Ca and Si in the stems, as well as the total uptake of K and Si and the Si:N ratio in coffee plants, being more evident in the N fertilization presence. This study unraveled that, especially when it was soil-applied, Si altered the nutrient uptake, allocation, and stoichiometric ratios with N, with a consequent increase in biomass production of young coffee plants fertilized with N. [ABSTRACT FROM AUTHOR]

The soil microbiome plays a pivotal role in the functioning and resilience of agricultural ecosystems, contributing to critical processes such as organic matter decomposition, nutrient cycling, and plant growth promotion. However, the soil microbiome is constantly challenged by various environmental stresses, including drought, heavy metal contamination, salinity, and climate change, which can significantly disrupt the delicate balance of the soil ecosystem. In this context, the application of silicon (Si) has emerged as a promising strategy to mitigate the adverse effects of these environmental stresses on the soil microbiome. This review paper synthesizes the current understanding of the impacts of environmental stresses on the soil microbiome and explores the potential of Si as a mitigating agent in enhancing the resilience of the soil microbial community. Silicon can enhance the resilience of the soil microbiome through several mechanisms, such as increasing soil pH, improving nutrient and water availability and uptake, altering root exudation patterns and plant physiology, and directly stimulating the abundance, diversity, and functional potential of key microbial groups. By enhancing the resilience of the soil microbiome, Si application can help maintain the critical ecosystem services provided by soil microorganisms, ultimately contributing to the sustainability and productivity of agricultural systems. The review also highlights future research aspects, including elucidating the precise mechanisms of Si-microbiome interactions, evaluating the long-term effects of Si on soil microbiome resilience, optimizing Si application strategies for specific crop-soil systems, integrating Si management with other sustainable soil practices, and assessing the impacts of Si on soil microbiome-mediated ecosystem services. [ABSTRACT FROM AUTHOR]

Feedback field-effect transistors (FBFETs) have been studied to obtain near-zero subthreshold swings at 300 K with a high on/off current ratio ~1010. However, their structural complexity, such as an epitaxy process after an etch process for a Si channel with a thickness of several nanometers, has limited broader research. We demonstrated a FBFET using in-plane WSe2 p−n homojunction. The WSe2 FBFET exhibited a minimum subthreshold swing of 153 mV/dec with 30 nm gate dielectric. Our modeling-based projection indicates that the swing of this device can be reduced to 14 mV/dec with 1 nm EOT. Also, the gain of the inverter using the WSe2 FBFET can be improved by up to 1.53 times compared to a silicon CMOS inverter, and power consumption can be reduced by up to 11.9%. [ABSTRACT FROM AUTHOR]