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Objective To investigate the effects of long non-coding RNA FEZ family zinc finger 1 antisense RNA 1(lncRNA FEZF1-AS1) on enhancer of zeste homolog 2(EZH2) in regulation of proliferation, migration, invasion and epithelial-mesenchymal transition (EMT) of pulmonary interstitial cells and its mechanism. Methods The A549 cells human lung adenocarcinoma cell line were divided into control group and model group [model cells were induced into lung interstitial cells after being treated with transforming growth factor β1(TGF-β1)20 ng/mL for 48 h]. The protein expression of E-cadherin, N-cadherin and vimentin in each group was detected by Western blot. The expression of lncRNA FEZF1-AS1 and EZH2 in the two groups was detected by RT-qPCR. Cells in the transfection group were divided into si NC group,lncRNA FEZF1-AS1+OE vector group and si lncRNA FEZF1-AS1+OE EZH2 group. Cell proliferation was examined by CCK-8 method, cell migration was detected by cell scratch, and cell invasion was detected by Transwell assays. The protein expression of E-cadherin, N-cadherin, vimentin and EZH2 in each group was detected by Western blot. The direct binding effect of FEZF1-AS1 and EZH2 was determined by RNA immuno-precipitation (RIP). Results Compared with the control group, the protein expression level of E-cadherin in the model group was significantly decreased (P＜0.05),and the protein expression of N-cadherin and vimentin was significantly increased(P＜0.05). Compared with the control group, the expression level of lncRNA FEZF1-AS1 and EZH2 genes was significantly increased in the model group (P＜0.05). Compared with si NC group, the proliferation, migration and invasion ability of si lncRNA FEZF1-AS1+OE vector group were decreased, the expression of E-cadherin protein was increased while the expression of N-cadherin, vimentin and EZH2 was decreased(P＜0.05). Compared with si lncRNA FEZF1-AS1+OE vector group, the proliferation, invasion and migration of si lncRNA FEZF1-AS1+OE EZH2 group were increased (P＜0.05). E-cadherin expression was decreased, while N-cadherin, vimentin and EZH2 expressions were increased (P＜0.05). RIP experiment further confirmed that lncRNA FEZF1-AS1 had direct binding effect with EZH2. Conclusions LncRNA FEZF1-AS1 can promote the proliferation, invasion, metastasis and EMT process of pulmonary fibrosis cells by regulating EZH2.

The stress corrosion cracking (SCC) behaviors of X100 pipeline steels with different heat-treated microstructures in carbonate/bicarbonate solution at various potentials were investigated in this study. Several analyses were performed using electrochemical measurements, slow strain rate tensile (SSRT) tests, scanning electron microscopy (SEM), and electron back-scattered diffraction (EBSD). The results showed that the SCC susceptibilities of heat-treated microstructures increase as the cathodic potential shifts from −850 to −1200 mVvsSCE. At a weak cathodic potential, the different microstructures show clear SCC sensitivity, showing that hydrogen cannot be ignored in this circumstance when the alkaline environment is not considered seriously. At a mild cathodic potential, hydrogen sensitivity controls SCC behavior, but at a larger negative potential, both electrochemical effect and hydrogen sensitivity influence SCC behavior. The SCC cracks propagate along the high angle grain boundary (HAGB) at open circuit potential (OCP) and as the applied potential is adjusted negatively, the cracks would either follow low angle grain boundary (LAGB), HAGB or random orientation propagation paths. The synergistic influence of dislocation, grain boundary, grain size, martensite/austenite (M/A) island, and carbide controls the SCC process of the X100 pipeline. SCC susceptibility was shown to be high in microstructures with coarse grain and high dislocation density, whereas grain boundaries such as the martensite/austenite (M/A) island and carbide offer sites for SCC initiation.

Lanthanide‐doped scintillators have the ability to convert the absorbed X‐ray irradiation into ultraviolet (UV), visible (Vis), or near‐infrared (NIR) light. Lanthanide‐doped scintillators with excellent persistent luminescence (PersL) are emerging as a new class of PersL materials recently. They have attracted great attention due to their unique "self‐luminescence" characteristic and potential applications. In this review, we comb through and focus on current developments of lanthanide‐doped persistent luminescent scintillators (PersLSs), including their PersL mechanism, synthetic methods, tuning of PersL properties (e. g. emission wavelength, intensity, and duration time), as well as their promising applications (e. g. information storage, encryption, anti‐counterfeiting, bio‐imaging, and photodynamic therapy). We hope this review will provide valuable guidance for the future development of PersLSs. [ABSTRACT FROM AUTHOR]

High‐efficiency Cu(In,Ga)Se2 solar cells rely on Ga grading to mitigate back surface recombination. However, the inhomogeneous absorber has drawbacks, including increased non‐radiative loss and inadequate absorption. Therefore, literatures demand a paradigm shift of using a hole‐transport layer to passivate the back surface. Herein, a functional hole‐transport layer is demonstrated as an alternative to Ga grading. The novel hole‐transport layer is prepared as a double‐layer: co‐evaporated CuGaSe2 covered by solution combustion synthesis prepared In2O3. As demonstrated by micrographs, elemental mapping, and photoluminescence spectroscopy, the oxide layer improves thermal stability and prevents Ga diffusion. However, during the absorber deposition, a complete ion exchange of In and Ga converts CuGaSe2/In2O3 into CuInSe2/GaOx. Incorporating this hole‐transport layer in co‐evaporated nongraded CuInSe2 solar cells leads to significantly increased minority carrier lifetime from 5 to 113 ns, yielding an 80 meV improvement in quasi‐Fermi‐level splitting. The devices exhibit improved open‐circuit voltage, as well as a promising fill factor of over 71%, indicating good hole‐transport properties. In these results, the passivation effect and good hole‐transport properties of the hole‐transport layer are experimentally demonstrated. Thus, high‐efficiency solar cells can be achieved by using a functional hole‐transport layer without relying on Ga grading. [ABSTRACT FROM AUTHOR]

There is an increasing interest in sensing applications for a variety of analytes in aqueous environments, as conventional methods do not work reliably under humid conditions or they require complex equipment with experienced operators. Hydrogel sensors are easy to fabricate, are incredibly sensitive, and have broad dynamic ranges. Experiments on their robustness, reliability, and reusability have indicated the possible long-term applications of these systems in a variety of fields, including disease diagnosis, detection of pharmaceuticals, and in environmental testing. It is possible to produce hydrogels, which, upon sensing a specific analyte, can adsorb it onto their 3D-structure and can therefore be used to remove them from a given environment. High specificity can be obtained by using molecularly imprinted polymers. Typical detection principles involve optical methods including fluorescence and chemiluminescence, and volume changes in colloidal photonic crystals, as well as electrochemical methods. Here, we explore the current research utilizing hydrogel-based sensors in three main areas: (1) biomedical applications, (2) for detecting and quantifying pharmaceuticals of interest, and (3) detecting and quantifying environmental contaminants in aqueous environments. [ABSTRACT FROM AUTHOR]

Emerging haptic technology based on piezoelectric actuators enables to realize innovative tactile human–machine interface. The standard solution is based on stand-alone bulk ceramics glued directly on the haptic device. Thin-film actuators with metal–insulator–metal structure have been developed to directly integrate actuators on haptic plates. The thickness of thin films is limited to 2 μm, leading to large capacitance and, thus, too high-power consumption. To solve this issue, we developed haptic devices based on a 10 μm-thick PZT film deposited on a 0.65 mm-thick platinized silicon substrate. These thick films are made of a PZT composite slurry associated with sol-gel sol infiltration. They are dense and exhibit a permittivity of 1000 and dielectric loss lower than 0.05. Our fabricated haptic device containing three actuators connected in series exhibits an antisymmetric Lamb wave resonant mode at 62.0 kHz, in line with finite element modeling. At the limit of touch detection (1 μm out of plane deflection), the power consumption of the haptic device is 150 mW at 40 V. This represents a 15-fold consumption reduction with respect to the same haptic device made with 0.5 μm-thick PZT thin films. [ABSTRACT FROM AUTHOR]

Transparent thin‐film piezoelectric transducers are attractive for haptic displays. However, for their widespread use in consumer electronics, innovative and cost‐effective processing methods need to be developed. In this contribution the effectiveness of the deposition of lead zirconate titanate thin films by inkjet printing for the fabrication of haptic devices is demonstrated. The 1,3‐propanediol solvent is used to prepare effective inkjet‐printing inks from chemical solution deposition solutions. The printed thin‐film structures on fused silica glass substrates are 900 nm thick and strongly {100} oriented perovskite phase is detected in X‐ray diffraction patterns. To fabricate devices, interdigitated capacitors and SU‐8 insulation layers are deposited on top of the printed lead zirconate titanate. Dimensions of the final device are 15.7 × 3.4 mm2. A standing antisymmetric Lamb wave is observed at 63.3 kHz, with out‐of‐plane displacement reaching 2 µm at an applied voltage of 100 V. This value exceeds the limit at which the texture rendering function can be induced in the device. Good functional performance of the device is linked with good electromechanical properties of the printed piezoelectric, with permittivity ε ′ and piezoelectric coefficient e33,f values of 1000 and 7.7 C m−2, respectively, which are comparable to films prepared by standard spin‐coating process. [ABSTRACT FROM AUTHOR]

In this work, the influence of temperature on the corrosion behavior of AlCoCrFeNi2.1 eutectic high-entropy alloy in a chloride-containing sulfuric acid solution was investigated using electrochemical measurement, X-ray photoelectron spectroscopy, and scanning electron microscopy. Results show that the passive film of AlCoCrFeNi2.1 is stable in chloride-containing sulfuric acid solutions at low temperatures, while an unstable film forms on the alloy at high temperatures. Furthermore, temperature changes the proportion of hydroxide and oxide in Fe and Cr, but it has no noticeable effect on Al and Ni, which is a significant factor on the passive behavior. L12 phase exhibits good corrosion resistance at different temperatures. Pitting occurred on B2 phase in the chloride-containing sulfuric acid solution at a low temperature of 5 °C, while pitting and dissolution take place on AlCoCrFeNi2.1 in the acid solution at room temperature and above. [ABSTRACT FROM AUTHOR]

Lead zirconate titanate (PZT) thin films stand for a prominent technological brick in the field of microsystems. The recent improvements of their manufacturability combined with excellent piezoelectric properties have enabled their introduction in industrial clean rooms all around the world. These films require annealing temperatures beyond 600 °C to crystallize in the desired perovskite phase, which exhibits outstanding piezoelectric coefficients. This temperature requirement forbids large application fields such as flexible electronics, smart glass but also system-on-chip approaches. Decreasing the annealing temperature of PZT films would therefore spread further their potential usage to other applications. The purpose of this paper is to provide the reader with a comprehensive review of the different techniques available in the literature to process piezoelectric PZT thin films at temperatures compatible with semiconductors (450 °C), smart glass (400 °C), or flexible electronics (350 °C). We first present the typical ferroelectric and piezoelectric properties of PZT films. The different deposition techniques and growth mechanisms of these films are then reviewed with a focus on thermodynamics. Then, all the low temperature processes are detailed, such as seeding effects, the modification of deposition parameters in vapor-phase deposition, special annealing technologies assisted with UV, lasers, flash lamps, microwave radiations or high-pressure, a focus on the hydrothermal method, and finally what is called solution chemistry design with notably combustion synthesis. Transfer processing is also detailed, as an alternative way to this low temperature approach. An outlook of future applications enabled by these innovative techniques is finally provided. [ABSTRACT FROM AUTHOR]

Purpose: This paper aims to analyze a failure case of a P110 tube in a CO2 flooding well. Design/methodology/approach: The chemical composition, microstructure and mechanical properties of the failed P110 tubing steel were tested, and met the API Spec 5CT standard. The fractures were investigated by scanning electron microscopy and energy dispersive spectroscopy. Findings: Fracture was induced by stress corrosion cracking (SCC) and that the stress concentration caused by the mechanical damage played an important role in the failure. The failure case is a SCC failure affected by mechanical damage and galvanic corrosion. Originality/value: The effect of the infiltration of groundwater was studied in the failure case. The stress concentration caused by the mechanical damage played an important role in the failure. [ABSTRACT FROM AUTHOR]

One-dimensional nanostructured SnO2 has attracted intense research interest due to its advantageous properties, including a large surface-to-volume ratio, high optical transparency and typical n-type properties. However, how to fabricate high-performance and multifunctional electronic devices based on 1D nanostructured SnO2 via low-cost and efficient preparation techniques is still a huge challenge. In this work, a low-cost, one-step electrospun technology was employed to synthesize the SnO2 nanofiber (NF) and nanotube (NT) arrays. The electrical and photoelectrical parameters of SnO2 NTs-based devices were effectively controlled through simple changes to the amount of Sn in the precursor solution. The optimal 0.2 SnO2 NTs-based field effect transistors (FETs) with 0.2 g SnCl2*4H2O per 5 ml in the precursor solution exhibit a high saturation current (∼9 × 10−5 A) and a large on/off ratio exceeding 2.4 × 106. Additionally, 0.2 SnO2 NTs-based FET also exhibit a narrowband deep-UV photodetectivity (240–320 nm), including an ultra-high photocurrent of 307 μA, a high photosensitivity of 2003, responsibility of 214 A W−1 and detectivity of 2.19 × 1013 Jones. Furthermore, the SnO2 NTs-based transparent photodetectors were as well be integrated with fluorine-doped tin oxide glass and demonstrated a high optical transparency and photosensitivity (∼199). All these results elucidate the significant advantages of these electrospun SnO2 NTs for next-generation multifunctional electronics and transparent photonics. [ABSTRACT FROM AUTHOR]

Graphical abstract Highlights • SnO 2 /MO x (M=Zn, Ga, W) nanotubes and nanofibers were fabricated by one-step electrospinning and subsequent calcination. • Selectivity was effectively changed and controlled by designing various SnO 2 /MO x heterostructures. • SnO 2 /MO x sensors were firstly used to compose sensor arrays to detect VOCs mixtures by means of matrix manipulation. Abstract It is a challenge to effectively detect the components of a gas mixture using metal oxide sensors which are easily fabricated and inexpensive. In this work, heterostructured SnO 2 /MO x (i.e. M = Zn, Ga and W) nanotubes (NTs) and nanofibers (NFs) are synthesized via a one-step electrospinning technology and subsequent calcination for use in gas sensors. In specific, compared with pure SnO 2 NTs, SnO 2 /ZnO NTs show an enhanced response to 100 ppm ethanol and acetone, while SnO 2 /Ga 2 O 3 NTs show an obviously higher response to 100 ppm ethanol and SnO 2 /WO 3 NFs show an optimal response to 100 ppm xylene. All these sensors are selective in the presence of typically interfering gases such as formaldehyde, benzene and toluene. As a proof-of-concept, sensor arrays constructed using these three sensors precisely detected the gas mixtures of ethanol, acetone and xylene by means of matrix manipulation, delivering a superior accuracy of <9% deviation for the gas concentration of 10 ppm and 20 ppm and <38% for the concentration of 5 ppm. These results show the possibility of improved selectivity in detecting gas mixtures using heterostructured gas-sensing materials for sensor arrays. [ABSTRACT FROM AUTHOR]

This study investigated the effect of flowing velocity and impact angle on the fluid-accelerated corrosion (FAC) of X65 pipeline steel in a wet CO2-containing environment by corrosion morphology analysis, electrochemical measurement, and hydromechanical numerical analysis. It has been found that the corrosion behavior was controlled by the ion diffusion rate and shear stress due to the flowing gas. With an increase in the flowing velocity, the pitting corrosion initially decreased and then increased when the flowing velocity exceeded 14 m/s; this increase is caused by the augmentation of shear stress. When the impact angle decreased, the position of serious corrosion gradually moved outwards. [ABSTRACT FROM AUTHOR]

Abstract: Although significant progress has been made towards using ZnO nanofibers (NFs) in future high‐performance and low‐cost electronics, they still suffer from insufficient device performance caused by substantial surface roughness (i.e., irregularity) and granular structure of the obtained NFs. Here, a simple one‐step electrospinning process (i.e., without hot‐press) is presented to obtain controllable ZnO NF networks to achieve high‐performance, large‐scale, and low‐operating‐power thin‐film transistors. By precisely manipulating annealing temperature during NF fabrication, their crystallinity, grain size distribution, surface morphology, and corresponding device performance can be regulated reliably for enhanced transistor performances. For the optimal annealing temperature of 500 °C, the device exhibits impressive electrical characteristics, including a small positive threshold voltage (Vth) of ≈0.9 V, a low leakage current of ≈10−12 A, and a superior on/off current ratio of ≈106, corresponding to one of the best‐performed ZnO NF devices reported to date. When high‐κ AlOx thin films are employed as gate dielectrics, the source/drain voltage (VDS) can be substantially reduced by 10× to a range of only 0–3 V, along with a 10× improvement in mobility to a respectable value of 0.2 cm2 V−1 s−1. These results indicate the potential of these nanofibers for use in next‐generation low‐power devices. [ABSTRACT FROM AUTHOR]

The structures of a flow field induced by a plasma actuator were investigated experimentally in quiescent air using high-speed Particle Image Velocimetry (PIV) technology. The motivation behind was to figure out the flow control mechanism of the plasma technique. A symmetrical Dielectric Barrier Discharge (DBD) plasma actuator was mounted on the suction side of the SC (2)-0714 supercritical airfoil. The results demonstrated that the plasma jet had some coherent structures in the separated shear layer and these structures were linked to a dominant frequency of = 39 Hz when the peak-to-peak voltage of plasma actuator was 9.8 kV. The high speed PIV measurement of the induced airflow suggested that the plasma actuator could excite the flow instabilities which lead to production of the roll-up vortex. Analysis of transient results indicated that the roll-up vortices had the process of formation, movement, merging and breakdown. This could promote the entrainment effect of plasma actuator between the outside airflow and boundary layer flow, which is very important for flow control applications. [ABSTRACT FROM AUTHOR]