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Summary With the characteristics of high efficiency and high power density, the four switch buck–boost (FSBB) converter is widely used in electric vehicles, direct current microgrids, and so forth. However, how to achieve smooth switching between different modes of FSBB has always been a hot issue in the theoretical and engineering fields. In this paper, considering the dynamic performance and output voltage or inductance current deviation, a control algorithm with integrated natural trajectory method is designed to realize the switching of different modes of FSBB converter. The proposed control algorithm is based on the theory of large signal natural locus and average natural locus. The normalized phase locus of inductance current and output voltage divides the phase plane into five regions and performs large signal or average switching operations in different regions. Theoretical analysis shows that the proposed control algorithm can achieve the balance between the dynamic performance and output voltage or inductance current deviation of FSBB converter in different mode switching. Finally, the performance of the proposed control algorithm is verified by experiments results. [ABSTRACT FROM AUTHOR]

The size of the V-defects in the GaN/InGaN-based quantum wells blue light-emitting diode (LED) was intentionally modified from 50 nm to 300 nm. High resolution photoluminescence and electroluminescence of a single large V-defect were investigated by near-field scanning optical microscopy. The current distribution along the {10-11} facets of the large defect was measured by conductive atomic force microscopy. Nearly 20 times the current injection and dominant emission from bottom quantum wells were found in the V-defect compared to its vicinity. Such enhanced current injection into the bottom part of quantum wells through V-defect results in higher light output power. Reduced external quantum efficiency droops were achieved due to more uniform carrier distribution. The un-encapsulated fabricated chip shows light output power of 172.5 mW and 201.7 mW at 400 mA, and external quantum efficiency drop of 22.3% and 15.4% for the sample without and with large V-defects, respectively. Modified V-defects provide a simple and effective approach to suppress the efficiency droop problem that occurs at high current injection, while improving overall quantum efficiency. [ABSTRACT FROM AUTHOR]