109 results on '"Wu, Tian-Li"'
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2. Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies
3. Enhancement of Ferroelectricity in 5 nm Metal-Ferroelectric-Insulator Technologies by Using a Strained TiN Electrode
4. Using U-Net convolutional neural network to model pixel-based electrostatic potential distributions in GaN power MIS-HEMTs
5. Investigation of time-dependent gate dielectric breakdown in recessed E-mode GaN MIS-HEMTs using ferroelectric charge trap gate stack (FEG-HEMT)
6. Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures
7. Dynamic on-resistance stability of SiC and GaN power devices during high-frequency (100–300 kHz) hard switching and zero voltage switching operations
8. Electrical performance study of Schottky barrier diodes using ion implanted β-Ga2O3 epilayers grown on sapphire substrates
9. Impacts of material parameters on breakdown voltage and location for power MOSFETs
10. Inflencing Factors for Pulmonary Nodular Growth Predicted by Artificial Intelligence-based Follow-up
11. GaN-based mini-LED matrix applied to multi-functional forward lighting
12. Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants
13. Demonstration of Schottky barrier diode integrated in 200 V power p-GaN HEMTs technology with robust stability
14. Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs
15. Analysis of the subthreshold characteristics in AlGaN/GaN HEMTs with a p-GaN gate
16. Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
17. Investigation of the passivation-induced VTH shift in p-GaN HEMTs with Au-free gate-first process
18. Effects of γ-Ray Irradiation on AlGaN/GaN Heterostructures and High Electron Mobility Transistor Devices
19. Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation
20. Male-specific Dmrt1 is a candidate sex determination gene in spotted scat (Scatophagus argus)
21. Thimet oligopeptidase and prolyl endopeptidase of spotted scat Scatophagus argus: characterization, tissue distribution, expression at different ovarian stages and down-regulation by estradiol
22. Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
23. Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate
24. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO 2 Metal-Ferroelectric-Metal Memory.
25. 1F-1T Array: Current Limiting Transistor Cascoded FeFET Memory Array for Variation Tolerant Vector-Matrix Multiplication Operation.
26. Demonstration of Differential Mode Ferroelectric Field‐Effect Transistor Array‐Based in‐Memory Computing Macro for Realizing Multiprecision Mixed‐Signal Artificial Intelligence Accelerator.
27. Analysis of slow de-trapping phenomena after a positive gate bias on AlGaN/GaN MIS-HEMTs with in-situ Si3N4/Al2O3 bilayer gate dielectrics
28. Multiple-State Nonvolatile Memory Based on Ultrathin Indium Oxide Film via Liquid Metal Printing.
29. Demonstration of MOCVD-grown Ga2O3 power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
30. Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT.
31. H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs.
32. Foxl2 of the Hong Kong catfish (Clarias fuscus): cDNA cloning, tissue distribution and changes in gene expression towards methyltestosterone, estradiol and letrozole exposure of the fries during gonadal differentiation
33. Capacitance-Dependent V TH Instability Under a High dV g /dt Event in p-GaN Power HEMTs.
34. High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate HEMTs With a Robust Forward Time-Dependent Gate Breakdown Stability.
35. Corrigendum to “Male-specific Dmrt1 is a candidate sex determination gene in spotted scat (Scatophagus argus)” [Aquaculture, Volume 495, 1 October 2018, Pages 351–358]
36. 1100 V, 22.9 mΩcm 2 4H-SiC RESURF Lateral Double-Implanted MOSFET With Trench Isolation.
37. A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs.
38. Fully Transparent AlGaN/GaN High Electron Mobility Transistors Fabricated With Indium-Tin-Oxide Electrodes.
39. Machine Learning-Based Statistical Approach to Analyze Process Dependencies on Threshold Voltage in Recessed Gate AlGaN/GaN MIS-HEMTs.
40. Design and analysis of high electron mobility transistor inspired: III-V electro-optic modulator topologies.
41. Improved TDDB Reliability and Interface States in 5-nm Hf0.5Zr0.5O2 Ferroelectric Technologies Using NH3 Plasma and Microwave Annealing.
42. Understanding γ-Ray Induced Instability in AlGaN/GaN HEMTs Using a Physics-Based Compact Model.
43. Effects of Annealing on Ferroelectric Hafnium–Zirconium–Oxide-Based Transistor Technology.
44. Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures.
45. Toward Understanding Positive Bias Temperature Instability in Fully Recessed-Gate GaN MISFETs.
46. Negative Bias-Induced Threshold Voltage Instability in GaN-on-Si Power HEMTs.
47. Trapping mechanisms in GaN-based MIS-HEMTs grown on silicon substrate.
48. Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.
49. Evidence of Hot-Electron Degradation in GaN-Based MIS-HEMTs Submitted to High Temperature Constant Source Current Stress.
50. Reliability Analysis of Permanent Degradations on AlGaN/GaN HEMTs.
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