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Abstract Two‐dimensional (2D) materials have attracted increasing attention for their outstanding structural and electrical properties. However, for mass‐production of field effect transistors (FETs) and potential applications in integrated circuits, large‐area and uniform 2D thin films with high mobility, large on‐off ratio, and desired polarity are needed to synthesize firstly. Here, a transfer‐free growth method for platinum diselenide (PtSe2) films has been developed. The PtSe2 films have been synthesized with various thicknesses in centimeter‐sized scale. Typical FET made from a few layer PtSe2 show p‐type unipolar, with a high field‐effect hole mobility of 6.2 cm2 V−1 s−1 and an on‐off ratio of 5 × 103. The versatile semimetal‐unipolar‐ambipolar transition in synthesized PtSe2 films is also firstly observed as the thickness thinning. This work realizes the large‐scale preparation of PtSe2 with prominent electrical properties and provides a new strategy for polarity's modulation.

Chemical vapor deposition synthesis of semiconducting transition metal dichalcogenides (TMDs) offers a new route to build next-generation semiconductor devices. But realization of continuous and uniform multilayer (ML) TMD films is still limited by their specific growth kinetics, such as the competition between surface and interfacial energy. In this work, a layer-by-layer vacuum stacking transfer method is applied to obtain uniform and non-destructive ML-MoS2 films. Back-gated field effect transistor (FET) arrays of 1L- and 2L-MoS2 are fabricated on the same wafer, and their electrical performances are compared. We observe a significant increase of field-effect mobility for 2L-MoS2 FETs, up to 32.5 cm2 V−1 s−1, which is seven times higher than that of 1L-MoS2 (4.5 cm2 V−1 s−1). Then we also fabricated 1L-, 2L-, 3L-, and 4L-MoS2 FETs to further investigate the thickness-dependent characteristics of transferred ML-MoS2. Measurement results show a higher mobility but a smaller current on/off ratio as the layer number increases, suggesting that a balance between mobility and current on/off ratio can be achieved in 2L- and 3L-MoS2 FETs. Dual-gated structure is also investigated to demonstrate an improved electrostatic control of the ML-MoS2 channel. [ABSTRACT FROM AUTHOR]