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This article presents a four-element phased-array transceiver (TRX) front-end for millimeter-wave (mm-Wave) 5G new radio (NR). The effects of amplitude-to-phase (AM–PM) and amplitude-to-amplitude (AM–AM) distortions on error vector magnitude (EVM) are detailed. A three-stage highly linear wideband class-AB power amplifier (PA) is described, mitigating AM–PM and AM–AM distortions without degrading other performances. A matching network embedded transmitting/receiving (T/R) switch is proposed to support time division duplex (TDD). With the proposed technique, RF switch insertion losses are reduced in both transmitter (TX) and receiving (RX) modes. In each TRX element, phase and gain controls are achieved by a 6-bit vector-modulated phase shifter (VMPS) with a phase tuning range of 360° and a 6-bit attenuator with a gain tuning range of 31.5 dB, respectively. Fabricated in 65-nm bulk CMOS, the proposed packaged TRX demonstrates the measured peak gains of 25.5/14.2 dB with the gain ripples of less than 2.5/1.9 dB across 24–29.5 GHz in the TX/RX mode. The measured peak $P_{\text {1 dB}}$ is 17.6 dBm with a power added efficiency (PAE) of 20.4%. The measured minimum noise figure (NF) is 4.3 dB. The TRX achieves an output power of 7.9–8.9 dBm and an EVM of −25 dB with 8 $\times $ 100-MHz 5G NR frequency range 2 (FR2) orthogonal frequency division multiplexing (OFDM) 64-quadrature amplitude modulation (QAM) signals across 24–29.5 GHz, covering 3rd generation partnership project (3GPP) 5G NR FR2 operating bands (i.e., n257, n258, and n261) around 26 GHz. [ABSTRACT FROM AUTHOR]

A 1.9-dB NF K-band phased-array receiver (RX) is presented, which employs the hybrid packaged 65-nm CMOS beamformer and 0.1- $\mu \text{m}$ GaAs LNAs based on the fan-out wafer-level chip-scale packaging (WLCSP) technology. Power-efficient gain and phase tuning blocks are utilized to reduce power consumption. Temperature-healing design methodology is adopted to ensure nearly constant gain response versus temperature variations. The proposed phased-array RX only consumes 30.2-mW dc power per channel and achieves < 1.2-dB gain variation and < 0.9-dB NF variation from −40 °C to 85 °C. [ABSTRACT FROM AUTHOR]

This paper describes a fully integrated power amplifier (PA) in 100 nm InGaAs pHEMT process for E-band point-to-point communications. The device size and biasing conditions are optimized to enhance the overall performance at millimeter-wave frequencies. The complete PA consists of two unit PAs and each unit PA has four stages to improve the gain while ensuring stability from dc to the operating frequencies. A 4-way zero-degree combiner (in the unit PA) and a 2-way λ/2 combiner are used to boost the output power. Occupying 5 mm2, the proposed PA achieves an output power of 0.45 W with 17.9% PAE at 74 GHz. [ABSTRACT FROM AUTHOR]