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Triadica sebifera is an important landscaping tree species because of its colorful autumn leaves. In recent years, some cultivars have been bred and licensed, but it can be difficult to identify them from their morphological traits due to their similar phenotypes. To explore the genetic relationships and construct a fingerprint of the cultivars, the licensed T. sebifera cultivars were analyzed using SSR markers. A total of 179 alleles were identified among the 21 cultivars at 16 SSR loci, and these alleles exhibited a high level of genetic diversity (He = 0.86). The genetic variations mainly occurred among cultivars based on an analysis of molecular variance (AMOVA). According to phylogenetic analysis, principal coordinate analysis (PCoA), and Bayesian clustering analysis, the genetic relationships were independent of geographic distances, which may be mainly due to transplantations between regions. Some cultivars with different leaf colors showed obvious genetic differentiation and may be preliminary candidates for cross-breeding. Finally, the fingerprint for the licensed cultivars was constructed with two SSR markers. The results of this study can provide technical support for the application and legal protection of licensed Triadica sebifera cultivars. [ABSTRACT FROM AUTHOR]

Conductive‐bridge random access memory (CBRAM) emerges as a promising candidate for next‐generation memory and storage device. However, CBRAMs are prone to degenerate and fail during electrochemical metallization processes. To address this issue, herein we propose a self‐repairability strategy for CBRAMs. Amorphous NbSe2 was designed as the resistive switching layer, with Cu and Au as the top and bottom electrodes, respectively. The NbSe2 CBRAMs demonstrate exceptional cycle‐to‐cycle and device‐to‐device uniformity, with forming‐free and compliance current‐free resistive switching characteristics, low‐operation voltage, and competitive endurance and retention performance. Most importantly, the self‐repairable behavior is discovered for the first time in CBRAM. The device after failure can recover its performance to the initially normal state by operating with a slightly large reset voltage. The existence of Cu conductive filament and excellent controllability of Cu migration in the NbSe2 switching layer has been revealed by a designed broken‐down point approach, which is responsible for the self‐repairable behavior of NbSe2 CBRAMs. Our self‐repairable and high‐uniform amorphous NbSe2 CBRAM may open the door to the development of memory and storage devices in the future. [ABSTRACT FROM AUTHOR]

Artificial synapse devices are dedicated to overcoming the von Neumann bottleneck. Adopting light signals in visual information processing and computing is vital for developing next‐generation artificial neuromorphic systems. A strategy to construct all‐optically controlled artificial synaptic devices based on full oxides with amorphous ZnAlSnO/SnO heterojunction in a two‐terminal planar configuration is proposed. All synaptic behaviors are operated in the visible optical pathway, with excitatory synapse under red (635 nm) light and inhibitory synapse under green (532 nm) and blue (405 nm) lights. Based on the different inhibitory effects, two modes of long‐term depression (LTD) and RESET processes can be implemented through green and blue lights, respectively. The energy consumption of an event can be as low as 0.75 pJ. A three‐layer perceptron model is designed to classify 28 × 28‐pixel handwritten digital images and performed supervised learning using a backpropagation algorithm, demonstrating the bio‐visually inspired neuromorphic computing with a training accuracy of 92.74%. The all‐optically controlled artificial synapses with write/erasure behaviors in visible RGB region and rational microelectronic process, as presented in this work, are essential in developing future artificial neuromorphic systems and highlight the huge potential of next‐generation computer systems. [ABSTRACT FROM AUTHOR]

Vision sensors are becoming increasingly ubiquitous, and they continuously collect, store, communicate, and process vast amount of sensitive data that are vulnerable to being stolen and misused. Existing cryptosystems based on complex cipher algorithms generally require extensive computational resources, making them difficult to use in vision sensors that have limited processing capabilities. Here, we propose and experimentally demonstrate a novel in situ image cryptography scheme based on a neuromorphic vision sensor comprising all-optically controlled (AOC) memristors. Due to the unique light wavelength and irradiation history-dependent bidirectional persistent photoconductivity of AOC memristors, a visual image can be stored, encrypted, decrypted, denoised, and destroyed within a vision sensor. A decrypted image can be encoded in situ and then accurately recognized through a memristive neural network. Encrypted and destroyed images are capable of withstanding hacking attacks even with trained neural networks. Our cryptography scheme enables complete cryptographic operations entirely on a sensor and, therefore, effectively safeguards visual information. This work provides a simple yet efficient solution to the security challenges faced by vision sensors. [ABSTRACT FROM AUTHOR]

Cherries (Prunus Subgenus Cerasus) have economic value and ecological significance, yet their phylogeny, geographic origin, timing, and dispersal patterns remain challenging to understand. To fill this gap, we conducted a comprehensive analysis of the complete chloroplast genomes of 54 subg. Cerasus individuals, along with 36 additional genomes from the NCBI database, resulting in a total of 90 genomes for comparative analysis. The chloroplast genomes of subg. Cerasus exhibited varying sizes and consisted of 129 genes, including protein-coding, transfer RNA, and ribosomIal RNA genes. Genomic variation was investigated through InDels and SNPs, showcasing distribution patterns and impact levels. A comparative analysis of chloroplast genome boundaries highlighted variations in inverted repeat (IR) regions among Cerasus and other Prunus species. Phylogeny based on whole-chloroplast genome sequences supported the division of Prunus into three subgenera, I subg. Padus, II subg. Prunus and III subg. Cerasus. The subg. Cerasus was subdivided into seven lineages (IIIa to IIIg), which matched roughly to taxonomic sections. The subg. Padus first diverged 51.42 Mya, followed by the separation of subg. Cerasus from subg. Prunus 39.27 Mya. The subg. Cerasus started diversification at 15.01 Mya, coinciding with geological and climatic changes, including the uplift of the Qinghai–Tibet Plateau and global cooling. The Himalayans were the refuge of cherries, from which a few species reached Europe through westward migration and another species reached North America through northeastward migration. The mainstage of cherry evolution was on the Qing–Tibet Plateau and later East China and Japan as well. These findings strengthen our understanding of the evolution of cherry and provide valuable insights into the conservation and sustainable utilization of cherry's genetic resources. [ABSTRACT FROM AUTHOR]

Amorphous oxide-based memristors are significant candidates for the realization of neuromorphic systems. However, barely attributing memristive performance to oxygen vacancy is insufficient and oversimplified. In this work, the amorphous structure stability, surface morphology and chemical state of amorphous ZnTiSnO films with different oxygen vacancy contents are comprehensively characterized. The memristive performance of Au/ZnTiSnO/Au crossbar devices is sensitive to the oxygen vacancy content affected by the oxygen pressure during functional layer deposition. The device prepared under 4.4 Pa oxygen pressure achieved far more pinched hysteresis loops than that fabricated at 4.5 Pa oxygen pressure. In contrast, no memristive behavior could be observed for devices prepared at 1.8 Pa and 0 Pa. Notably, the content of OII components representing oxygen vacancies differs by less than 10% between samples. An initial low resistance state is observed owing to the Fermi level above the conduction band. For the 4.4 Pa device, there is a narrow difference between the conduction band minimum and the Fermi level, accompanied by high Schottky barriers. These findings provide new inspiration for the design of valence change mechanism memristors. [ABSTRACT FROM AUTHOR]

In current optical imaging devices, complex peripheral circuits are required to obtain clear and true images, which leads to limited power and area efficiency. Inspired by the visual processing in retina, an optoelectronic neuromorphic device with short‐term plasticity (STP) can realize self‐adjustment of the visual system to real time in response to the external stimuli, including light controlled short‐term facilitation (STF) and short‐term depression (STD). Herein, an optoelectronic synaptic device based on a simple Au/ZnS/Pt structure is found to show both synaptic STD and STF under light stimulation. STD originates from photoexcited carriers trapped by defects in the ZnS film, whereas STF results from photocurrent rising due to trap filling via previous electrical stimulation. Moreover, the STP of the device exhibits excellent stability and repeatability. In addition, this optoelectronic device can be used to adjust the sharpness of the view according to different brightness levels through STD and STF. The realization of self‐adjustment through STP of the emerging optoelectronic neuromorphic device may pave the way for bionic systems facing complex environments. [ABSTRACT FROM AUTHOR]

In recent decades, artificial intelligence has been successively employed in the fields of finance, commerce, and other industries. However, imitating high-level brain functions, such as imagination and inference, pose several challenges as they are relevant to a particular type of noise in a biological neuron network. Probabilistic computing algorithms based on restricted Boltzmann machine and Bayesian inference that use silicon electronics have progressed significantly in terms of mimicking probabilistic inference. However, the quasi-random noise generated from additional circuits or algorithms presents a major challenge for silicon electronics to realize the true stochasticity of biological neuron systems. Artificial neurons based on emerging devices, such as memristors and ferroelectric field-effect transistors with inherent stochasticity can produce uncertain non-linear output spikes, which may be the key to make machine learning closer to the human brain. In this article, we present a comprehensive review of the recent advances in the emerging stochastic artificial neurons (SANs) in terms of probabilistic computing. We briefly introduce the biological neurons, neuron models, and silicon neurons before presenting the detailed working mechanisms of various SANs. Finally, the merits and demerits of silicon-based and emerging neurons are discussed, and the outlook for SANs is presented. [ABSTRACT FROM AUTHOR]

A simple low-temperature (< 100 °C) hot-water treatment was used to synthesize Fe–N co-doped anatase nanocrystals which were uniformly dispersed in micro–mesoporous SiO2 host film for the first time. The Fe–N co-doped TiO2–SiO2 (FNTS) film exhibited stable photocatalytic activities. A NO removal efficiency of 56.1% was achieved under simulated solar light irradiation without any obvious inactivation in 30 min. The transient photocurrent response of FNTS film is approximately six times higher than that of non-doped TiO2–SiO2 film, indicating the superior charge separation of photo-generated electron–hole pairs. Electron spin resonance analysis showed that the ·OH and ·O2− radicals were key species to remove NO. Combined with quantitative reaction intermediates, the possible photocatalytic degradation mechanism of NO over FNTS film was proposed. In addition, the FNTS thin films exhibited intrinsic super-hydrophilicity and durable self-cleaning property even after 6 months of storage in the dark. This work provides a facile method to load the catalyst on thermal labile substrates, such as soda–lime glass and organic polymer for more practical applications. A simple low-temperature (< 100 °C) hot-water treatment was used to synthesize micro–mesoporous TiO2–SiO2 composite film, which shows good self-cleaning ability and superior photodegradation activity for NO removal under solar light. [ABSTRACT FROM AUTHOR]

Neuromorphic computing (NC) is a new generation of artificial intelligence. Memristors are promising candidates for NC owing to the feasibility of their ultrahigh‐density 3D integration and their ultralow energy consumption. Compared to traditional electrical memristors, the emerging optoelectronic memristors are more attractive owing to their ability to combine the advantages of both photonics and electronics. However, the inability to reversibly tune the memconductance with light has severely restricted the development of optoelectronic NC. Here, an all‐optically controlled (AOC) analog memristor is realized, with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. The device is based on the relatively mature semiconductor material InGaZnO and a memconductance tuning mechanism of light‐induced electron trapping and detrapping. It is found that the light‐induced multiple memconductance states are nonvolatile. Furthermore, spike‐timing‐dependent plasticity learning can be mimicked in this AOC memristor, indicating its potential applications in AOC spiking neural networks for highly efficient optoelectronic NC. [ABSTRACT FROM AUTHOR]

Traditional memristors based on metal/insulator/metal sandwich structures generally require the operation voltages of several volts to switch the device between different resistance states. In this work, we report the ultralow set and reset voltages of 14 mV and 0.3 V in a simple bilayer device, respectively, which is composed of the widely used indium tin oxide (ITO) solely. Such low operation voltages might be ascribed to the synergistic effect of the loose porous structure in the upper ITO layer deposited by electron beam evaporation, the amorphous interface between two ITO layers, and the formation of an oxygen concentration gradient triggered by an initiation process. Based on the superior resistive switching properties of this kind bilayer device, synaptic functions and image memorization are achieved by applying ultralow electrical stimulus. The prototype device not only paves the way for simplifying the device structure and the fabrication process but also offers possibilities to develop transparent multifunctional devices with low power consumption. [ABSTRACT FROM AUTHOR]

Optoelectronic synapse, well coupling the optical and electrical signals in one device, is an important building block in neuromorphic hardware library. Herein, optoelectronic synaptic devices are demonstrated based on a unique amorphous oxide semiconductor (InGaCdO [IGCO]) that can be spiked by broadband light signals from ultraviolet to near‐infrared region, approaching the wavelength of 1000 nm. These optically stimulated synaptic devices are based on the conventional bottom‐gate thin‐film transistor (TFT) configuration, providing the beneficial process/structural compatibility with the flat‐panel display industry. The IGCO TFTs, showing an ultrahigh field‐effect mobility up to 106 cm2 V−1 s−1, can well simulate a series of basic synaptic functionalities via changing the pulse intensity, number, and frequency. The device plasticity originates from the dynamic ionization and neutralization of oxygen vacancy‐related defects. Also, the mechanism underlying this dynamic process is discussed in detail, verifying that oxygen vacancy can turn to its ionized state by directly absorbing a photon having enough energy or with the aid of holes. The relatively higher carrier mobility, smaller bandgap, and larger activation energy of oxygen vacancy for the IGCO together facilitate the achievement of broadband optoelectronic synaptic devices. [ABSTRACT FROM AUTHOR]

In this article, we report the growth of zinc‐tin nitride (ZnSnN2) thin films as a potential absorber for photovoltaic applications by fabricating a heterojunction of n‐ZnSnN2/p‐SnO. The performance of the heterojunction has been monitored through selective deposition of top electrode with different materials (Ni/Au or Al). The electron‐transfer process from the ZnSnN2 layer to the cathode is facilitated by selecting metal electrode with relatively low work function, which also boosts up the electron injection or/and extraction. The diode exhibits a good J–V response in the dark with a rectification ratio of 3 × 103 at 1.0 V and an ideality factor of 4.2 in particular with Al as the top electrode. Under illumination, the heterostructure solar cell demonstrates a power conversion efficiency of ≈0.37% with an open circuit voltage of 0.25 V and a short circuit current density of 4.16 mA cm−2. The prime strategies, on how to improve solar cell efficiency concerning band offsets and band alignment engineering are also discussed. [ABSTRACT FROM AUTHOR]

A novel oxynitride semiconductor, ZnSnON, is demonstrated. The design of this material follows the reported anion control strategy (N additives) to diminish the bandgap and the electron effective mass of ZnO on the one hand, and a cation control strategy (Sn additives) to circumvent the chemical stability problems of ZnON on the other. Comparative studies are conducted on the performance and stability of ZnSnON and ZnON films and their thin-film transistors (TFTs). It is shown that ZnSnON possesses superior transport properties and enhanced operation stability simultaneously. Such amelioration is owing to multiple factors, including the amorphous/nanocrystalline mixed phase and the bonding strength increase caused by the Sn-related oxide/oxynitride dominant in the back channel region. In addition, the Sn additives in ZnON do not alter the direct bandgap character, maintaining around 1.6 eV. The ZnSnON-TFT is photosensitive in the whole visible light region with a photoresponsivity higher than 6 × 103 A W−1. Considering the high-mobility, improved operation stability, and visible light sensing capability, this semiconductor can be used in a broad array of applications such as in active-matrix imaging arrays, interactive displays, flat X-ray detectors, etc. [ABSTRACT FROM AUTHOR]

Fully transparent InZnO thin-film transistors (TFTs), with either a bottom gate or an in-plane gate device structure, were fabricated using the solution-processed SA proton conducting films as gate dielectrics. The self-assembled InZnO channel with different thickness by the gradient shadow mask was fabricated during the same batch radio-frequency magnetron sputtering. The threshold voltage can be modulated from −0.25 to +0.12 V and from −0.07 to +0.25 V by the channel layer thickness variations for the vertically-coupled and laterally-coupled InZnO TFTs, respectively. Accordingly, these InZnO TFTs can operate in either depletion or enhancement mode on the same chip. A general expression of the turn-on voltage in relation to the channel thickness is derived. The device performance with an on/off current ratio of ≥1.5 × 106, a subthreshold swing of down to 70 mV/decade, and a field-effect mobility of up to 34.3 cm2/V · s is exhibited. Our results demonstrate that the same batch channel processing is potentially applied in logic circuits or functional electronics. [ABSTRACT FROM AUTHOR]

Callus induction and plant regeneration ofMniochloa abersendvia lateral shoots were conducted in this study. Murashige and Skoog (MS) medium supplemented with 1.0 mg/L 2,4-dichlorophenoxyacetic acid (2,4-D) and 1.0 mg/L naphthaleneacetic acid (NAA) was effective for compact callus induction. Remarkably, calli on the MS medium with 0.1 mg/L 2,4-D yielded the highest folds of proliferation (8.01), and showed a high potential capacity to differentiate 1 year after subculture. In addition, the compact calli possessed 100% differentiation rate and generated more shoots that were green and strong in 1.0 mg/L kinetin and 1.0 mg/L NAA. Vigorous roots were generated in the 1/2MS supplemented with 0.5 mg/L indole-3-butyric acid, and the resultant plantlets exhibited 90% survival rate after they were hardened and transplanted. The established regeneration system ofM. abersendprovides a promising platform for bamboo gene function study. [ABSTRACT FROM PUBLISHER]

The solution-processed sodium-alginate (SA) films, with nanoporous/nanochannel microstructure, possess a total absorbed water number of 10420 ± 395 molecules per square nanometer, which gives rise to a high proton conductivity of 4.0 × 10−4 S cm−1. When SA films used as gate dielectric in the thin film transistors, electric-double-layer (EDL) would be formed whether at the dielectric/channel or at dielectric/gate electrode interface, leading to a huge specific capacitance and low operating voltage for the TFTs. More importantly, due to the three-dimensional proton conducting characteristic, one can design the TFT device structure expediently from conventional vertical gate coupling to laterally coplanar gate coupling structure. The TFTs with ease-design device layout have potential applications in multifunctional electronic devices. [ABSTRACT FROM AUTHOR]

By using shoot tips as explants, various media and culture conditions for callus induction and proliferation, shoot differentiation, root induction and plantlet transplantation to develop an efficient and reliable regeneration system with Dendrocalamus hamiltonii were tested. Murashige and Skoog (MS) medium supplemented with 3 mg/l 2, 4-dichlorophenoxyacetic acid, 1 mg/l benzyladenine (BA), 500 mg/l glutamine, 500 mg/l proline, and 500 mg/l casein hydrolysate yielded the best rates of callus induction and granular-compact callus induction. MS medium supplemented with 1 mg/l BA, 0.3 mg/l kinetin and 0.3 mg/l naphthaleneacetic acid conferred the highest differentiation rate of calli. The maximum rooting rate was obtained in 1/2 MS medium supplemented with 3 mg/l indole-3-butyric acid, and the roots were long and thick. All hardened plantlets survived after transfer to an equal ratio mixture of peat, vermiculite and perlite. The regeneration system of D. hamiltonii developed is efficient and provides a useful tool for genetic transformation in bamboo species. [ABSTRACT FROM AUTHOR]

Developing plasmonic materials as cermet composites is desirable for selective solar absorbers. Silver nanoparticles/alumina (Ag-Al2O3) cermet possesses reasonable resistance to high-temperature oxidation; however, an inherent long-range diffusion of Ag element limits their applications at elevated temperatures. In this work, a well-designed AgAl-Al2O3 nanocermet, after low-temperature pretreatment in air, exhibits stable plasmonic absorption feature with negligible degradation at 500 °C for 990 h in nitrogen ambient. Based on this cermet, an Al2O3/low metal volume fraction AgAl-Al2O3/high metal volume fraction AgAl-Al2O3/Al2O3/AgAl tandem absorber was successfully constructed, demonstrating a high solar absorptance of ≈95% and a low infrared emittance of ≈11%@673 K after annealing at 500 °C for 1002 h in nitrogen ambient. It is believed that thermal-induced out-diffusion of Al atoms from AgAl bimetallic nanoparticles and their consequent oxidation afford an opportunity to generate self-organized alumina-capped Ag nanoparticles. The alumina-capped Ag particles and unalloyed Ag agglomerations are mixed together to form mosaic structure, suppressing the long-distance diffusion of active Ag and wild growth of particle agglomerations so as to guarantee the microstructural integrity and plasmon absorption stability. These results demonstrate that the proposed AgAl-Al2O3-based solar absorber is remarkably promising to be used in high-temperature solar thermal conversion. [ABSTRACT FROM AUTHOR]

A comparison of the asymmetric OFF-state current-voltage characteristics between Cu/ZnO/Pt and Cu/ZnO/Al-doped ZnO (AZO) electrochemical metallization memory (ECM) cells demonstrates that the Cu filament rupture and rejuvenation occur at the ZnO/Pt (or AZO) interface, i.e., the cathodic interface. Therefore, the filament is most likely to have a conical shape, with wider and narrower diameters formed at the anodic and cathodic interfaces, respectively. It is inferred that the filament growth starts at the anode surface and stops at the cathode surface. Our results indicate that oxide-based ECM cells strongly differ from sulfide- and selenide-based ones in the resistive switching mechanism. [ABSTRACT FROM AUTHOR]

Abstract: Borocarbide (B4C) can be directly nitrided to a stoichiometric ternary compound B4CN4 by heating in a stream of nitrogen gas at temperatures in a range of 1600–1900°C. The reaction was diffusion-controlled with an activation energy of 242kJ/mol. The resulting B4CN4 powder had the turbostratic layered boron nitride (t-BN) structure, which was changed into a three-dimensionally ordered layered structure (h-BN) with the lattice parameters of a =2.506(1)Å and c =6.710(9)Å on heating at 2250°C in a closed nitrogen atmosphere. The a parameter is very close to that of h-BN, but the c parameter is larger than that of h-BN, rather close to that of graphite. The compound was reversibly decomposed to B4C+2N2 on heating in Ar atmosphere at 2100°C. [Copyright &y& Elsevier]

A novel tungsten cathode activated with 4.5% nano-oxide (in weight) has been prepared by the swaging technique. We have investigated the effect of high content nano-ThO2 addition on the operating characteristics of the cathode. It is found that the arc voltage and minimum open circuit voltage (OCV) can be reduced as varying the content of ThO2 nanoparticles from 2% to 4.5%, implying that the increasing of quantity of the thoria in the electrode takes effect on its characteristics importantly. [Copyright &y& Elsevier]

Optoelectronic Neuromorphic Computing: All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing (Adv. Funct. Keywords: all-optically controlling; memristive synapses; neuromorphic computing; optoelectronic memristors EN all-optically controlling memristive synapses neuromorphic computing optoelectronic memristors 1 1 1 01/27/21 20210122 NES 210122 In article number 2005582, Fei Zhuge and co-workers develop an all-optically controlled (AOC) analog memristor based on the relatively mature material InGaZnO. This device has promising applications in AOC spiking neural networks for highly efficient optoelectronic neuromorphic computing. [Extracted from the article]

Neuromorphic computing based on a non‐von Neumann architecture is a promising way for the efficient implementation of artificial intelligence. A neuromorphic computing system is mainly composed of artificial synapses and neurons. Various electronic neuromorphic devices have been developed by different technologies. Neuromorphic photonics combines the efficiency of neural networks and the speed of photonics to build computing systems. Compared with their electronic counterparts, photonic neurons and synapses have the potential advantages of ultrafast operation speed, large bandwidth, and no electrical interconnect power loss, inherent to the computing by optical means. Therefore, photonic neuromorphic devices are attracting more and more attention. This work reviews the recent advances in the development of photonic synapses. Both purely photonic synapses and photoelectric synapses are described. Their structures and working mechanisms are discussed in detail. [ABSTRACT FROM AUTHOR]

Although the structure and function of the human brain are still far from being fully understood, brain‐inspired computing architectures mainly consisting of artificial neurons and artificial synapses have been attracting more and more attentions due to their powerful computing capability and energy efficient operation. Synaptic plasticity is believed to be the origin of learning and memory. However, it is still a big challenge to realize artificial synapses with high reliability, good scalability, and low energy consumption, comparable to their biological counterparts. The memristor is a two‐terminal electronic device whose conductance can be reversibly regulated by electric stimuli. Memristive devices are considered ideal synaptic emulators due to their superior performance such as high speed and low power operation. This work reviews the recent advances in the development of memristive synapses based on different types of memristors. First, various working mechanisms of memristive synapses are discussed and compared. Then, different integration approaches of synaptic devices are described and compared. Various cognitive functions implemented with synaptic crossbar circuits are also described. Finally, the approaches for optimizing the performance parameters of memristive synapses and challenges to integrate the synaptic devices with complementary metal oxide semiconductor (CMOS) or memristive neurons are overviewed and discussed briefly. Brain‐inspired computing architechtures have been attracting more and more attention due to their powerful computing capability and energy‐efficient operation. This work reviews the recent advances in the development of memristive synapses based on different types of memristors, mainly focusing on their working mechanisms, crossbar integration, and cognitive functions. [ABSTRACT FROM AUTHOR]

Ambipolar thin film transistors have attracted increasing research interests due to their promising applications in complementary logic circuits and the dissipative charge transporting devices. Here, we report the fabrication of an ambipolar transistor using tin mono-oxide (SnO) as a channel, which possesses balanced electron and hole field-effect mobilities. A complementary metal oxide semiconductor-like inverter using the SnO dual operation transistors is demonstrated with a maximum gain up to 30 and long-term air stability. Such logic device configuration would simplify the circuit design and fabrication process, offering more opportunities for designing and constructing oxide-based logic circuits. [ABSTRACT FROM AUTHOR]

We investigated capacitors based on polycrystalline narrow-band-gap BiFeO3 (BFO) thin films with different top electrodes. The photovoltaic response for the capacitor with a Sn-doped In2O3 (ITO) top electrode is about 25 times higher than that with a Au top electrode, which indicates that the electrode plays a key role in determining the photovoltaic response of ferroelectric thin film capacitors, as simulated by Qin et al (2009 Appl. Phys. Lett.95 22912). The light-to-electricity photovoltaic efficiency for the ITO/polycrystalline BFO/Pt capacitor can reach 0.125%. Furthermore, under incident light of 450 µW cm − 2 and zero bias, the corresponding photocurrent varies from 0.2 to 200 pA, that is, almost a 1000-fold photoconductivity enhancement. Our experiments suggest that polycrystalline BFO films are promising materials for application in photo-sensitive and energy-related devices. [ABSTRACT FROM AUTHOR]