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In this work we present a generalization of the Liouvillian superoperator for periodic quantum systems that can be formulated through partitioned Hamiltonians. We formulate a compact algebraic form of the superoperator that allows efficient numerical implementation along with the possibility of further generalization and the inclusion of the system’s boundary effects (i.e. device contacts). We apply this formalism to Quantum Cascade Laser structure where we compare the second nearest and the nearest on approximation, and present the laser dynamics that is independent from the number of states considered.

Abstract Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

Abstract Nanowires are promising platforms for realizing ultra-compact light sources for photonic integrated circuits. In contrast to impressive progress on light confinement and stimulated emission in III-V and II-VI semiconductor nanowires, there has been no experimental demonstration showing the potential to achieve strong cavity effects in a bottom-up grown single group-IV nanowire, which is a prerequisite for realizing silicon-compatible infrared nanolasers. Herein, we address this limitation and present an experimental observation of cavity-enhanced strong photoluminescence from a single Ge/GeSn core/shell nanowire. A sufficiently large Sn content ( ~ 10 at%) in the GeSn shell leads to a direct bandgap gain medium, allowing a strong reduction in material loss upon optical pumping. Efficient optical confinement in a single nanowire enables many round trips of emitted photons between two facets of a nanowire, achieving a narrow width of 3.3 nm. Our demonstration opens new possibilities for ultrasmall on-chip light sources towards realizing photonic-integrated circuits in the underexplored range of short-wave infrared (SWIR).

Abstract The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable optical and quantum photonic circuits. Herein, a scalable technique is presented to produce identical on‐chip lasers by dynamically controlled strain engineering. By using localized laser annealing that can control the strain in the laser gain medium, the emission wavelengths of several GeSn one‐dimensional photonic crystal nanobeam lasers are precisely matched whose initial emission wavelengths are significantly varied. The method changes the GeSn crystal structure in a region far away from the gain medium by inducing Sn segregation in a dynamically controllable manner, enabling the emission wavelength tuning of more than 10 nm without degrading the laser emission properties such as intensity and linewidth. The authors believe that the work presents a new possibility to scale up the number of identical light sources for the realization of large‐scale photonic‐integrated circuits.

In this work, we have studied optical and dielectric properties of (Ga, Cu)-doped ZnO nanoparticles in both theoretical and experimental aspects. In an experimental approach, we have synthesized ZnO, Ga-doped ZnO, Cu-doped ZnO, and (Ga, Cu)-codoped ZnO nanopowder by using combustion method, then calcined nanoparticles were investigated by XRD, SEM, TEM, and UV-vis spectroscopy techniques. In the case of the first-principles calculation, 2×2×2 supercell of ZnO and (Ga, Cu)-co-doped ZnO is modeled. These systems consist of 32 atoms while two-Zn atoms are removed and replaced by Ga and Cu. Thus, it is 12.5% mole (Ga, Cu)-co-doped ZnO, same doping percentage to experiment part. In the study, density functional theory (DFT) study is conducted on VASP using GGA with Hubbard parameter (GGA+U). The supercells are firstly optimized. Then, the study carries on by density of states, and band structures calculation. To summarize, we have successfully fabricated (Ga, Cu)-co-doped ZnO nanoparticles with the particle size of 40 – 50 nm, then, optical, and dielectric properties of Ga and Cu doping on ZnO are studied. From the explored results, it can be concluded that this work successes in enhancement dielectric properties and optical properties of ZnO by Ga and Cu doping. As a result, ZnO could be a higher efficiency dielectric material and photocatalyst under Sun irradiation when it is doped by Ga and Cu ions.

This work considers the enhancement of the thermoelectric figure of merit, ZT, of SrTiO3 (STO) semiconductors by (La, Dy and N) co-doping. We have focused on SrTiO3 because it is a semiconductor with a high Seebeck coefficient compared to that of metals. It is expected that SrTiO3 can provide a high power factor, because the capability of converting heat into electricity is proportional to the Seebeck coefficient squared. This research aims to improve the thermoelectric performance of SrTiO3 by replacing host atoms by La, Dy and N atoms based on a theoretical approach performed with the Vienna Ab Initio Simulation Package (VASP) code. Here, undoped SrTiO3, Sr0.875La0.125TiO3, Sr0.875Dy0.125TiO3, SrTiO2.958N0.042, Sr0.750La0.125Dy0.125TiO3 and Sr0.875La0.125TiO2.958N0.042 are studied to investigate the influence of La, Dy and N doping on the thermoelectric properties of the SrTiO3 semiconductor. The undoped and La-, Dy- and N-doped STO structures are optimized. Next, the density of states (DOS), band structures, Seebeck coefficient, electrical conductivity per relaxation time, thermal conductivity per relaxation time and figure of merit (ZT) of all the doped systems are studied. From first-principles calculations, STO exhibits a high Seebeck coefficient and high figure of merit. However, metal and nonmetal doping, i.e., (La, N) co-doping, can generate a figure of merit higher than that of undoped STO. Interestingly, La, Dy and N doping can significantly shift the Fermi level and change the DOS of SrTiO3 around the Fermi level, leading to very different thermoelectric properties than those of undoped SrTiO3. All doped systems considered here show greater electrical conductivity per relaxation time than undoped STO. In particular, (La, N) co-doped STO exhibits the highest ZT of 0.79 at 300 K, and still a high value of 0.77 at 1000 K, as well as high electrical conductivity per relaxation time. This renders it a viable candidate for high-temperature applications.

Abstract Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers monolithically integrated on Si have significantly intensified. This led to epitaxial studies of GeSn/SiGeSn hetero- and nanostructures, where charge carrier confinement strongly improves the radiative emission properties. Based on recent experimental literature data, in this report we discuss the advantages of GeSn/SiGeSn multi quantum well and quantum dot structures, aiming to propose a roadmap for group IV epitaxy. Calculations based on 8-band k∙p and effective mass method have been performed to determine band discontinuities, the energy difference between Γ- and L-valley conduction band edges, and optical properties such as material gain and optical cross section. The effects of these parameters are systematically analyzed for an experimentally achievable range of Sn (10 to 20 at.%) and Si (1 to 10 at.%) contents, as well as strain values (−1 to 1%). We show that charge carriers can be efficiently confined in the active region of optical devices for experimentally acceptable Sn contents in both multi quantum well and quantum dot configurations.

We characterise the thin-film structural properties and photoluminescence of femtosecond (40 fs, 800 nm) pulsed laser deposited Er3+-doped zinc-sodium tellurite glass on Si as a function of laser fluence. The laser fluence regime required for the formation of films composed of nanoparticles without droplets is found, the composition and crystallinity of the deposited material is reported and the photoluminescence of the films is characterised in dependence of film thickness.

Abstract Growth and characterization of advanced group IV semiconductor materials with CMOS‐compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III–V material system. Different types of double heterostructures and multi‐quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark‐field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal‐oxide‐semiconductor (CMOS)‐compatible group IV lasers.

Abstract In this work, we investigate the effects of n and p-type background doping, interface composition diffusion (interdiffusion) of the barrier material and layer thickness variation during molecular beam epitaxy (MBE) growth on transport characteristics of terahertz-frequency quantum cascade lasers (THz QCLs). We analysed four exemplary structures: a bound-to-continuum design, hybrid design, LO-phonon design and a two-well high-temperature performance LO-phonon design. The exemplary bound-to-continuum design has shown to be the most sensitive to the background doping as it stops lasing for concentrations around $$1.0\cdot 10^{15}$$ 1.0 · 10 15 – $$2.0\cdot 10^{15}$$ 2.0 · 10 15 cm $$^{-3}$$ - 3 . The LO-phonon design is the most sensitive to growth fluctuations during MBE and this is critical for novel LO-phonon structures optimised for high-temperature performance. We predict that interdiffusion mostly affects current density for designs with narrow barrier layers and higher $$\textrm{Al}$$ Al composition. We show that layer thickness variation leads to significant changes in material gain and current density, and in some cases to the growth of nonfunctional devices. These effects serve as a beacon of fundamental calibration steps required for successful realisation of THz QCLs.

In this work we discuss terahertz quantum cascade laser designs that employ resonant phonon mechanism to assist the lasing process. We investigate whether the higher energy separation would be more beneficial for high temperature performance than commonly used resonant value of 36 meV (in GaAs). We show that our density matrix model can be used for reliable cut-off temperature estimation and we present design improvement of several exemplary structures by enhancing their material gain to attain 10–50 K higher cut-off temperature.