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Your search keyword '"Fynbo, H. O. U."' showing total 9 results
Start Over Author "Fynbo, H. O. U." Publication Type Books
9 results on '"Fynbo, H. O. U."'

1. Study of a 5-Alpha Cluster Candidate with the 22Ne(p,t)20Ne and 22Ne(p,3He)20F Reactions

Author

Swartz, J. A., primary, Neveling, R., additional, Papka, P., additional, Donaldson, L. M., additional, Smit, F. D., additional, Steyn, G. F., additional, Adsley, P., additional, Baloyi, L. P. L., additional, Carter, J., additional, Fynbo, H. O. U., additional, Hubbard, N., additional, Mohamed, M. K., additional, O’Neill, G. G., additional, Nzobadila-Ondze, J. C., additional, Pellegri, L., additional, Pesudo, V., additional, Rebeiro, B., additional, and Triambak, S., additional

Published
2020
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5. Coulomb excitation of neutron-rich beams at REX-ISOLDE

Author

Scheit, H., primary, Niedermaier, O., additional, Bildstein, V., additional, Boie, H., additional, Fitting, J., additional, von Hahn, R., additional, Köck, F., additional, Lauer, M., additional, Pal, U. K., additional, Podlech, H., additional, Repnow, R., additional, Schwalm, D., additional, Alvarez, C., additional, Ames, F., additional, Bollen, G., additional, Emhofer, S., additional, Habs, D., additional, Kester, O., additional, Lutter, R., additional, Rudolph, K., additional, Pasini, M., additional, Thirolf, P. G., additional, Wolf, B. H., additional, Eberth, J., additional, Gersch, G., additional, Hess, H., additional, Reiter, P., additional, Thelen, O., additional, Warr, N., additional, Weisshaar, D., additional, Aksouh, F., additional, Van den Bergh, P., additional, Van Duppen, P., additional, Huyse, M., additional, Ivanov, O., additional, Mayet, P., additional, Van de Walle, J., additional, Äystö, J., additional, Butler, P. A., additional, Cederkäll, J., additional, Delahaye, P., additional, Fynbo, H. O. U., additional, Fraile, L. M., additional, Forstner, O., additional, Franchoo, S., additional, Köster, U., additional, Nilsson, T., additional, Oinonen, M., additional, Sieber, T., additional, Wenander, F., additional, Pantea, M., additional, Richter, A., additional, Schrieder, G., additional, Simon, H., additional, Behrens, T., additional, Gernhäuser, R., additional, Kröll, T., additional, Krücken, R., additional, Münch, M., additional, Davinson, T., additional, Gerl, J., additional, Huber, G., additional, Hurst, A., additional, Iwanicki, J., additional, Jonson, B., additional, Lieb, P., additional, Liljeby, L., additional, Schempp, A., additional, Scherillo, A., additional, Schmidt, P., additional, and Walter, G., additional

Published
2005
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6. Correlated emission of three α-particles in the β-decay of 12N

Author

Fynbo, H. O. U., primary, Prezado, Y., additional, Äystö, J., additional, Bergmann, U. C., additional, Borge, M. J. G., additional, Dendooven, P., additional, Huang, W., additional, Huikari, J., additional, Jeppesen, H., additional, Jones, P., additional, Jonson, B., additional, Meister, M., additional, Nyman, G., additional, Oinonen, M., additional, Riisager, K., additional, Tengblad, O., additional, Vogelius, I. S., additional, Wang, Y., additional, Weissman, L., additional, and Rolander, K. W., additional

Published
2003
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8. Identification of substitutional and interstitial Fe in 6H-SiC.

Author

Gunnlaugsson, H. P., Bharuth-Ram, K., Dietrich, M., Fanciulli, M., Fynbo, H. O. U., and Weyer, G.

Abstract

Iron impurities on interstitial (Fei) and substitutional sites (Fes) in SiC have been detected by 57Fe emission Mössbauer spectroscopy following implantation of radioactive 57Mn+ parent ions. At temperatures <900 K two Fei species are found, assigned to quasitetrahedral interstitial sites surrounded by, respectively, four C (Fej,C) or Si atoms (Fei,Si). Above 900 K, the Fei,Si site is proposed to ˵transform″ into the Fei,C site by a single Fei jump during the lifetime of the Mössbauer state (T1/2=100 ns). Fei,C and substitutional FeS sites are stable up to >1,070 K. [ABSTRACT FROM AUTHOR]

Published
2007
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9. Formation of Fe i −B pairs in silicon at high temperatures.

Author

Gunnlaugsson, H. P., Bharuth-Ram, K., Dietrich, M., Fanciulli, M., Fynbo, H. O. U., and Weyer, G.

Abstract

We report on the detection of Fei−B pairs in heavily B doped silicon using 57Fe emission Mössbauer spectroscopy following implantation of radioactive 57Mn+ parent ions (T1/2=1.5 min) at elevated temperatures >850 K. The Fei−B pairs are formed upon the dissociation of Fei−V pairs during the lifetime of the Mössbauer state (Tl/2=100 ns). The resulting free interstitial Fei diffuses over sufficiently large distances during the lifetime of the Mössbauer state to encounter a substitutional B impurity atom, forming Fei−B pairs, which are stable.up to ∼1,050 K on that time scale. [ABSTRACT FROM AUTHOR]

Published
2007
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